Ultrathin Bi films on Si(100)

Bobisch, C. A.; Bannani, A; Matena, Manfred; Möller, R.

doi:10.1088/0957-4484/18/5/055606

Cited by 21 publications

(16 citation statements)

References 10 publications

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“…Moreover, the intensity of the ring weakens as the temperature increases during annealing and vanishes completely above 230 K. This behavior suggests that the Bi(110) crystallites may have nucleated at defect sites like grain boundaries and vacancies. Such kind of thermally metastable structure was also reported in a previous publication [24]. Moreover, an analogous allotropic form was also observed previously in a Bi/Si(111) system at room temperature [8,9,25], where the Bi(110) orientation undergoes a complete transformation into the Bi(111) orientation after 4.5 ML coverage showing an coverage dependent structural transformation.…”

Section: A Growth and Morphologysupporting

confidence: 85%

Epitaxial Growth of Bi(111) on Si(001)

Jnawali

Hattab

Bobisch

et al. 2009

e-J. Surf. Sci. Nanotechnol.

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Despite the large lattice misfit and different lattice symmetry, it is possible to grow smooth and almost defectfree bismuth (Bi) films on a Si(001) substrate. High resolution low-energy electron diffraction measurements have confirmed that the (111) orientation is the preferred direction of the growth. However, at low temperature and low coverage regime, rotationally disordered crystallites of (110) orientation are also observed. After the formation of a continuous layer at 5.6 bilayer (2.2 nm), the growth occurs in a bilayer-by-bilayer fashion at 150 K. The remaining lattice mismatch of 2.3 % is accommodated by a periodic array of interfacial misfit dislocations, which gives rise to a periodic surface height undulation with sub-ångström amplitude. Additional growth to the desired thickness caps the height undulation resulting in an atomically smooth surface (terrace size > 100 nm). The Bi(111) film is relaxed to bulk lattice constant and shows excellent crystalline quality with an abrupt interface to the Si substrate.

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Section: A Growth and Morphologysupporting

confidence: 85%

Epitaxial Growth of Bi(111) on Si(001)

Jnawali

Hattab

Bobisch

et al. 2009

e-J. Surf. Sci. Nanotechnol.

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show abstract

“…Bi(111) thin films with a thickness of about 10 nm were prepared by evaporating Bi from a Knudsen cell onto the Si substrate at room temperature. After deposition, the Bi(111) film was kept at room temperature for more than 12 h ensuring a smooth and flat Bi(111) surface. , Bi(111) thin films grow in a bilayer-by-bilayer fashion such that the resulting surface roughness is mainly dominated by steps with a height of a bilayer (step height = 0.394 nm). For STM data acquisition and processing we used GxSM and WSxM. , …”

Section: Methodsmentioning

confidence: 99%

Interplay between Forward and Backward Scattering of Spin–Orbit Split Surface States of Bi(111)

et al. 2013

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The electronic structure at the surface of Bi(111) enables us to study the effect of defects scattering into multiple channels. By performing scanning tunneling spectroscopy near step edges, we analyze the resulting oscillations in the local density of electronic states (LDOS) as function of position. At a given energy, forward and backward scattering not only occur simultaneously but may contribute to the same scattering vector Δk. If the scattering phase of both processes differs by π and the amplitudes are almost equal, the oscillations cancel out. A sharp dip in the magnitude of the Fourier transform of the LDOS marks the crossover between forward and backward scattering channels.

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“…[24][25][26] The samples are mounted onto a precision manipulator equipped with the option to cool or heat the samples between 130 and 1000 K. Semiconducting samples may be flashed by direct current heating to 1500 K. Metals, such as bismuth or silver, can be evaporated out of a home built e-beam evaporator. The preparation chamber provides several methods to prepare surfaces, e.g., thin metallic films with high quality.…”

Section: Methodsmentioning

confidence: 99%

Local potentiometry using a multiprobe scanning tunneling microscope

Bannani

Bobisch

Möller

2008

Review of Scientific Instruments

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Scanning tunneling potentiometry (STP) is a powerful tool to analyze the conductance through thin conducting layers with lateral resolution in the nanometer range. In this work, we show how a commercial ultrahigh vacuum multiprobe system, equipped with four independent tips, can be used to perform STP experiments. Two tips are gently pushed into the surface applying a lateral current through the layer of interest. Simultaneously, the topography and the potential distribution across the metal film are measured with a third tip. The signal-to-noise ratio of the potentiometry signal may be enhanced by using a fourth tip, providing a reference potential in close vicinity of the studied area. Two different examples are presented. For epitaxial (111) oriented Bi films, grown on a Si(100)-(2 x 1) surface, an almost constant gradient of the potential as well as potential drops at individual Bi-domain boundaries were observed. On the surface of the Si(111)(3 x 3)-Ag superstructure the potential variation at individual monoatomic steps could be precisely resolved.

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Ultrathin Bi films on Si(100)

Cited by 21 publications

References 10 publications

Epitaxial Growth of Bi(111) on Si(001)

Epitaxial Growth of Bi(111) on Si(001)

Interplay between Forward and Backward Scattering of Spin–Orbit Split Surface States of Bi(111)

Local potentiometry using a multiprobe scanning tunneling microscope

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