Ultrasonically sprayed Cs3Bi2I9 thin film based self-powered photodetector

Optoelectronic insights of lead-free layered halide perovskites

“…The carrier ow is even more restricted in the 0D perovskite dimers such as Cs 3 M 2 I 9 (M = Bi 3+ , Sb 3+ ) having disconnected inorganic units. 103,104 The ambient-stable Bi 3+ and Sb 3+ containing HLDPs can be used as self-powered photodetectors because of the favourable juxtaposition of the VBM and CBM with the ETL, and fermi energy of the metal contact. Moreso, the electronic communication can be substantially increased by lowering the separation between the inorganic layers.…”

Lead‐Free All‐Inorganic Cesium Bismuth Iodide‐Based Perovskite Solar Cells: Recent Advances, Current Limitations, and Future Prospects

“…[ 56,57 ] Moreover, CBI‐based halide perovskites have also shown great potential to be applied in various optoelectronic devices such as photodetectors, high‐energy radiation detectors, memristors, X‐ray sensors, and light‐emitting diodes due to the stable crystal structure, nontoxicity, and attractive optoelectronic properties. [ 58–61 ]…”

“…[56,57] Moreover, CBI-based halide perovskites have also shown great potential to be applied in various optoelectronic devices such as photodetectors, high-energy radiation detectors, memristors, X-ray sensors, and light-emitting diodes due to the stable crystal structure, nontoxicity, and attractive optoelectronic properties. [58][59][60][61] The CBI-based halide perovskites can be generally divided into the 0D Cs 3 Bi 2 I 9 and 2D CsBi 3 I 10 structures. [61,62] As compared with 2D CsBi 3 I 10 , the 0D Cs 3 Bi 2 I 9 generally exhibited larger bandgaps and inferior carrier transport capability.…”

Study of fluorine-doped tin oxide thin films deposited by pneumatic spray pyrolysis and ultrasonic spray pyrolysis: a direct comparison

“…Furthermore, it can be combined with other layers to create resistive switching devices such as Al/ZnO/FTO [18], or even electrochromic devices like FTO-CO 3 O 4 , which can alter their color in response to an applied electric potential [9]. Additionally, photodetection using Ag/FTO/Cs 3 Bi 2 I 9 /C-Ag heterostructure has been demonstrated for blue light detectors under AM1.5 radiation, as well as 532 and 405 nm laser illuminations [20]. However, if high optical transmittance is desired for optoelectronic applications, an FTO layer is necessary.…”