Ultrasoft x-ray reflection and emission spectroscopic analysis of Al2O3/Si structure synthesized by the atomic layer deposition method

Abstract

X‐ray reflection spectroscopy and x‐ray emission spectroscopy using electron excitation were used to characterize the 30 nm‐thick Al2O3 film grown on a silicon substrate by atomic layer deposition (ALD). According to our investigations the film was amorphous and inhomogeneous in depth. The interfacial layer between film and substrate that was a mixed layer containing Al2O3, a large amount of the SiO2 and elemental Si was evidenced. The concentration of SiO2 increases as one approaches the Si(100) substrate interface because of the interdiffusion of the oxygen and silicon, followed by silicon oxidation. Copyright © 2006 John Wiley & Sons, Ltd.

The influence of porous silica substrate on the properties of alumina films studied by X-ray reflection spectroscopy

“…As can be seen, the absorption spectra display two characteristic maxima, A and B, the intensities of which obviously depend on the alumina film thickness. In the frame work of a quasi molecular approach, the A and B bands in the AlL 2,3 X ray absorption spectra of Al 2 O 3 are related to the transitions to a 1 (Al 3s) and t 2 (Al 3p) states, respectively [9]. The energy spacing between the A and B peaks amounts to 2.7 eV, which is in good agreement with the value of ΔE = 2.8 eV known for amorphous Al 2 O 3 [7] and thus points to an amorphous structure of all these films.…”