Ultrasensitive terahertz modulation by silicon-grown MoS<sub>2</sub>nanosheets

Chen, Sai; Fan, Fei; Miao, Yinping; He, Xiaotong; Zhang, Kailiang; Chang, Shengjiang

doi:10.1039/c5nr08101g

Cited by 124 publications

(68 citation statements)

References 35 publications

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“…16 Recently, we have found that a catalytic effect on THz modulation in the Si-grown MoS 2 , which can significantly enhance the modulation depth compared with bare Si wafer under the same weak CW laser pumping. 17 The unique band structure of MoS 2 -Si heterostructure and the high mobility of MoS 2 make more carriers are generated on the Si surface. Shortly afterwards, a similar experiment result has also been confirmed by Cao et al, 18 and they have explained the enhancement mechanism in more details.…”

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Optically pumped terahertz wave modulation in MoS2-Si heterostructure metasurface

et al. 2016

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An optically pumped terahertz (THz) modulator based on a MoS2-Si heterostructure metasurface are fabricated and investigated in this paper. The THz wave modulation in MoS2 metasurface has been demonstrated by THz time domain spectroscopy experiment and numerical simulation, which can reach over 90% under the continuous wave laser pumping of 4W/cm2 power density. Importantly, the catalysis of photocarrier generation in MoS2-Si heterostructure has been proved by the comparsion between the modulation depth of metasurface with and without MoS2 nanosheet under the same pumping power, and we found that the strcuture of metasurface and polariztion direction can also influence the photocarrier density in MoS2 metasurface. This novel THz modulator based on 2D material has a high effective modulation on THz waves under a low pumping power, which has a bright potential in THz applications.

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Optically pumped terahertz wave modulation in MoS2-Si heterostructure metasurface

et al. 2016

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“…As Shown in Figure 3b,c, with the bias current changing from 0 to 1800 mA, the transmission generally decreases from 0.60 to 0.003 in the range of 0.2-1 THz. [41][42][43][44][45][46][47][48][49][50][51] For the BST-silicon sample, we attribute the broadband modulation to the interaction between the carrier layer and THz waves. The threshold current changes from 1000 to 900 mA.…”

Section: Preparation and Characterization Of Thz Modulatorsmentioning

confidence: 99%

Multifield‐Inspired Tunable Carrier Effects Based on Ferroelectric‐Silicon PN Heterojunction

Lou

Wang

et al. 2019

Adv Elect Materials

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the entire modulation process. Due to their unique electronic and optical characteristics, 2D and quasi-2D materials are emerging as exciting material systems for a new generation of layered optoelectronics, [11,12] such as photodetectors, [13,14] polarizers, [15] solar cells, [3,[16][17][18] and optical modulators. [19,20] For instance, graphene has many intriguing mechanical, electronic, thermal, and optical properties because the electrons behave as massless Dirac fermions and exhibit the highest mobility. [21,22] 2D transition-metal dichalcogenides (TMDs) change from indirect semiconductors to direct semiconductors when thinned to monolayers, showing remarkable optoelectronic properties. [23] The formation mechanism of traditional carrier layers is usually based on the high carrier mobility of 2D and quasi-2D materials. Although significant progress has been achieved through years of research, the preparation technology of new 2D materials, such as graphene and monolayer TMDs, is not mature and stable. To meet the demand for large-scale preparation of 2D materials with stable performance, improving the preparation technology, exploring new design mechanisms, or seeking other stable materials as candidates is urgent.Ferroelectrics are such stable materials with simple preparation methods. Additionally, the domains can be controlled via electric, thermal, optical, and mechanical fields, [24][25][26][27][28] meaning that the bound surface charges of ferroelectrics can be modulated under single-field or multifield coupling. Inspired by the PN heterojunction effect, in which the generation of current carriers in the space charge region can be extremely high, [29][30][31][32][33][34][35] combining ferroelectrics and semiconductors with high carrier mobility to construct PN heterojunctions may be an effective way to form a carrier layer and achieve carrier modulation.To demonstrate this concept, N-type silicon with a bandgap of 1.12 eV is chosen as the semiconductor material, which can guarantee sufficient free electrons under optical field. Ferroelectrics usually have a Curie temperature T 0 above which they are in a paraelectric phase state. Due to its good dielectric performance with significant dielectric nonlinearity over a wide temperature range near T 0 , Ba 0.7 Sr 0.3 TiO 3 (BST) thin film is chosen as the ferroelectric material. By depositing the BST thin film directly onto a silicon substrate, the BST-silicon PN heterojunction is constructed, deriving from the interaction between

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“…Accordingly, for sufficient high fluences and frequencies lower than the scattering rate γ, the semiconductor can exhibit a "metallic" behaviour and a negative dielectric constant. Interestingly, even complex 2D materials such as graphene or MoS 2 , whose bandgap depends on the number of layers [19,20], can be described by the Drude model at THz frequencies in the first approximation. Graphene is a bidimensional material which derives much of its remarkable properties from its zero bandgap and conical energy dispersion.…”

Section: Basic Theoretical Principlementioning

confidence: 99%

All-integrated terahertz modulators

et al. 2017

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Terahertz (0.1-10 THz corresponding to vacuum wavelengths between 30 μm and 3 mm) research has experienced impressive progress in the last few decades. The importance of this frequency range stems from unique applications in several fields, including spectroscopy, communications, and imaging. THz emitters have experienced great development recently with the advent of the quantum cascade laser, the improvement in the frequency range covered by electronic-based sources, and the increased performance and versatility of time domain spectroscopic systems based on full-spectrum lasers. However, the lack of suitable active optoelectronic devices has hindered the ability of THz technologies to fulfill their potential. The high demand for fast, efficient integrated optical components, such as amplitude, frequency, and polarization modulators, is driving one of the most challenging research areas in photonics. This is partly due to the inherent difficulties in using conventional integrated modulation techniques. This article aims to provide an overview of the different approaches and techniques recently employed in order to overcome this bottleneck.

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Ultrasensitive terahertz modulation by silicon-grown MoS₂nanosheets

Cited by 124 publications

References 35 publications

Optically pumped terahertz wave modulation in MoS2-Si heterostructure metasurface

Optically pumped terahertz wave modulation in MoS2-Si heterostructure metasurface

Multifield‐Inspired Tunable Carrier Effects Based on Ferroelectric‐Silicon PN Heterojunction

All-integrated terahertz modulators

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Ultrasensitive terahertz modulation by silicon-grown MoS2nanosheets

Cited by 124 publications

References 35 publications

Optically pumped terahertz wave modulation in MoS2-Si heterostructure metasurface

Optically pumped terahertz wave modulation in MoS2-Si heterostructure metasurface

Multifield‐Inspired Tunable Carrier Effects Based on Ferroelectric‐Silicon PN Heterojunction

All-integrated terahertz modulators

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Ultrasensitive terahertz modulation by silicon-grown MoS₂nanosheets