Ultrasensitive broadband photodetector using electrostatically conjugated MoS2-upconversion nanoparticle nanocomposite

Ghosh, Sandip; Chiang, Wen Cheng; Fakhri, Muhammad Yusuf; Wu, Chien Ting; Chen, Ruei-San; Chattopadhyay, Surojit

doi:10.1016/j.nanoen.2019.104258

Cited by 34 publications

(53 citation statements)

References 59 publications

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“…[ 94,95 ] 2) The RE modification of 2D materials is usually by ultrasonic, spin coating, and stirring methods. [ 96–100 ] The typical method is shown in Figure 2d, Liu et al. utilized RE trifluoromethanesulfonates (Gd(Otf) 3 ; GdL 3 for short) to modify BP.…”

Section: Synthesis Methodsmentioning

confidence: 99%

“…[ 51,52 ] The number and position of absorption windows of RE can be controlled by doping with various RE ions, which in turn can be used for narrow and broad band detection. [ 96,167 ] Specially, the isolated sharp absorption of RE is beneficial for achieving wavelength‐selective response of PD. [ 71 ] Furthermore, some RE ions have absorption in the NIR region, which might bring new vitality into the NIR PD.…”

Section: Properties and Applicationsmentioning

confidence: 99%

“…also reported the similar MoS 2 /UCNPs hybrids for broadband PD from 325 to 1064 nm. [ 96 ] The enhancement of photoresponsivity in the NIR region was due to the UCNPs, while that in the UV–VIS range was resulted from the MoS 2 . Specially, coupled with Yb 3+ /Er 3+ ‐doped NaGdF 4 UCNPs, MoS 2 can have a photoresponsivity of above 100 A W −1 and a highest detectivity of 1.05 × 10 15 Jones at 980 nm up to date in this device class, which is due to the high absorption cross section of Yb 3+ at 980 nm.…”

Section: Properties and Applicationsmentioning

confidence: 99%

“…[94,95] 2) The RE modification of 2D materials is usually by ultrasonic, spin coating, and stirring methods. [96][97][98][99][100] The typical method is shown in Figure 2d, Liu et al utilized RE trifluoromethanesulfonates (Gd(Otf) 3 ; GdL 3 for short) to modify BP. [91] The BP flakes were prepared by ultrasonic liquid exfoliation method and were dispersed in N-methylpyrrolidone (NMP) for the GdL 3 surface modification with a stirring method for 20 h under Ar gas in dark.…”

Section: Mechanical Exfoliationmentioning

confidence: 99%

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Recent Advances in 2D Rare Earth Materials

Chen

Han

Zhao

et al. 2020

Adv Funct Materials

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2D rare earth (RE) materials have received considerable attention in recent years due to the fascinating luminescence, magnetism, and electric properties originated from RE associated with sharp and various emission peaks, intrinsic 2D ferromagnetism, and incommensurate charge density wave. These materials might open up a new prospect in next‐generation lighting, magnetic devices, and phototransistors. Herein, a comprehensive review of 2D RE materials is presented, focusing on their recent progresses. First, the crystal structures of 2D RE materials are discussed. Then, typical synthesis methods such as mechanical exfoliation, molecular beam epitaxy, pulsed laser deposition, and chemical vapor deposition are introduced. Furthermore, various properties in luminescence, magnetism, and electronics are summarized. The recently reported RE‐based 2D novel photodetectors are outlined as three constructions: MoS2/RE, graphene/RE, and perovskite/RE, which show promising applications for both narrow and broad band detection arised from the special absorption windows of different RE elements. Finally, the conclusions and outlook of this area are proposed, such as exploring novel 2D RE compounds, improving stability, and broadening applications.

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Section: Synthesis Methodsmentioning

confidence: 99%

Section: Properties and Applicationsmentioning

confidence: 99%

Section: Properties and Applicationsmentioning

confidence: 99%

Section: Mechanical Exfoliationmentioning

confidence: 99%

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Recent Advances in 2D Rare Earth Materials

Chen

Han

Zhao

et al. 2020

Adv Funct Materials

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“…In another study, 2D MoS 2 nanosheet and 0D CdSe nanocrystal-based hybrid phototransistor were developed which showed substantially enhanced photoresponsivity of 2.5 Â 10 5 A W À1 and the rise/fall times of 60 ms. 323 The photocurrent of MoS 2 /CdSe hybrid photodetector increased with increasing laser power intensities at 405 nm. Ghosh et al 364 developed photodetectors using a nanocomposite of single ake MoS 2 and lanthanide doped upconversion nanoparticles (UCNPs). The MoS 2 /UCNPs based photodetector showed highest photoresponsivity of 1254 A W À1 , detectivity of 1.05 Â 10 15 Jones and a gain of 7.12 Â 10 À4 cm 2 V À1 at 980 nm for 1.0 V bias.…”

Section: Mos 2 /Inorganic Semiconductor Heterostructuresmentioning

confidence: 99%

A review of molybdenum disulfide (MoS₂) based photodetectors: from ultra-broadband, self-powered to flexible devices

Nalwa¹

2020

RSC Adv.

229

146

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Conformal MoS₂/Silicon Nanowire Array Heterojunction with Enhanced Light Trapping and Effective Interface Passivation for Ultraweak Infrared Light Detection

Mei

Zhang

Shi

et al. 2021

Adv Funct Materials

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2D layered materials have attracted considerable attention for fabricating IR photodetectors. However, performance, especially for weak signal detection, of these IR photodetectors is often limited by the low absorbance of the very thin active materials as well as unsuppressed dark currents. Herein, a photodetector with high sensitivity for ultraweak IR signals based on a conformal MoS2/silicon nanowire array heterojunction with an ultrathin Al2O3 interfacial passivation layer is reported. The conformal light‐trapping nanoarray structure can greatly enhance broadband IR absorption, while the Al2O3 layer can suppress interface carrier recombination effectively and thus lower reverse dark current. The photodetectors exhibit broadband photoresponse ranging from 300 to 1600 nm, low noise current of 0.11 pA Hz−1/2, large responsivity up to 0.61 A W−1 at zero bias voltage, and high specific detectivity of 1011–1012 Jones. Significantly, the devices are capable of detecting ultraweak IR signals (e.g., 100 pW at 808 nm and 3 nW at 1310/1550 nm) with high on–off ratios without applying any external bias. This work proposes a new strategy to enhance light absorption of 2D materials and construct high‐quality junction based on them, which is promising for low‐cost and high‐performance optoelectronic devices.

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Ultrasensitive broadband photodetector using electrostatically conjugated MoS2-upconversion nanoparticle nanocomposite

Cited by 34 publications

References 59 publications

Recent Advances in 2D Rare Earth Materials

Recent Advances in 2D Rare Earth Materials

A review of molybdenum disulfide (MoS₂) based photodetectors: from ultra-broadband, self-powered to flexible devices

Conformal MoS₂/Silicon Nanowire Array Heterojunction with Enhanced Light Trapping and Effective Interface Passivation for Ultraweak Infrared Light Detection

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Ultrasensitive broadband photodetector using electrostatically conjugated MoS2-upconversion nanoparticle nanocomposite

Cited by 34 publications

References 59 publications

Recent Advances in 2D Rare Earth Materials

Recent Advances in 2D Rare Earth Materials

A review of molybdenum disulfide (MoS2) based photodetectors: from ultra-broadband, self-powered to flexible devices

Conformal MoS2/Silicon Nanowire Array Heterojunction with Enhanced Light Trapping and Effective Interface Passivation for Ultraweak Infrared Light Detection

Contact Info

Product

Resources

About

A review of molybdenum disulfide (MoS₂) based photodetectors: from ultra-broadband, self-powered to flexible devices

Conformal MoS₂/Silicon Nanowire Array Heterojunction with Enhanced Light Trapping and Effective Interface Passivation for Ultraweak Infrared Light Detection