Ultralow Subthreshold Swing 2D/2D Heterostructure Tunneling Field-Effect Transistor with Ion-Gel Gate Dielectrics

Abstract

Two-dimensional (2D) transition-metal dichalcogenide (TMD) semiconductors are promising materials for realizing band-to-band tunneling devices owing to the atomically thin layer and abrupt interface of their heterostructures. In this study, we transferred scalable few-atomic-layer thin films using metal-organic chemical vapor deposition (MOCVD)-grown molybdenum disulfide (MoS2) as an n-channel and CVD-grown molybdenum ditelluride (MoTe2) and tungsten diselenide (WSe2) as p-channels to build van der Waals vertical heterostructures. The heterostructures of intrinsic MoS2 and MoTe2 (or WSe2), each having n-type, ambipolar, or high p-type conductivity, were suitable for tunneling field-effect transistor (TFET) applications. We measured the electrical transport properties of the MoS2/MoTe2 (or WSe2) heterostructures using an ion-gel top gate. The fabricated TFET with MoS2/MoTe2 (or WSe2) heterostructures exhibits a subthreshold swing as low as 9.1 (or 7.5) mV/dec. The negative differential transconductance, negative differential resistance, and temperature-dependent I–V characteristics demonstrate the band-to-band tunneling process. The findings have significant potential for applications in the large-area production of next-generation wearable, stretchable, and flexible low-power electronic devices.

Versatility of the SiH–CdCl2 Heterostructure: Piezoelectricity, Photocatalysis, and Transistor Applications

“…In all cases, the SS is less than 60 mV/dec, with the lowest SS in case I. SS below 60 mV/dec results as the device is modulated by band-to-band quantum tunneling, instead of thermionic emission dominated process in traditional metal-oxide-semiconductor field effect transistor (MOSFET). The SS of the proposed device made of SiH–CdCl 2 is comparable to the TMD-based TFETs. − …”

The Effect of a Vacuum Environment on the Electrical Properties of a MoS2 Back-Gate Field Effect Transistor

“…In addition, reducing subthreshold swing can also effectively reduce the leakage current of the transistor, thereby improving the reliability and long-term stability of the device. Therefore, the technique of reducing sub-threshold swing has become an indispensable part of the design of low-power electronic devices, with broad application prospects and research value [29]. Similarly, in high-frequency electronic devices, fast switching characteristics and response speed are crucial.…”

A Mixture of Negative-, Zero-, and Positive-Differential Transconductance Switching from Tellurium/Indium Gallium Zinc Oxide Heterostructures

“…When applying gate voltage, precise control of the region where conductivity decreases requires delicate manipulation of the charge transport. For this purpose, charge transport behavior traits such as trap sites − and band-to-band tunneling − have been proposed. From a device structural perspective, approaches such as heterojunction structures that only connect certain parts of the channel − and insulation layer structuring , have been suggested.…”