Ultralow Specific On-Resistance High-Voltage SOI Lateral MOSFET

Extended Trench Gate Superjunction Lateral Power MOSFET for Ultra-Low Specific on-Resistance and High Breakdown Voltage

“…If a charge imbalance creates a high FOM, as in Fig. As the p-drift width (W p D) of the drain side has no additionally-induced charge, its width should be wider than W p or it should have a higher level of doping concentration [6]- [7]. The width of the p-drift region of the p-body side (W p ) and the width of the region beneath the thick oxide are uniformly 0.5 μm.…”

“…Here, the thick oxide helps to improve the reduced surface field (RESURF) by allowing multiple directional depletion. In addition, the lateral-direction electric field decreases due to the low permittivity of the oxide [6]- [7]. Meanwhile, due to the drift charge-balance effect, electric field modulation in the drift region occurs; this in turn, results in the creation of a uniform electric field.…”

A low specific on-resistance power trench MOSFET with a buried-interface-drain

“…In 2007, Varadarajan et al introduced trench-gate (vertical channel) into the conventional trench MOSFET and proposed double trenches power MOSFET, which exhibited a R on,sp of 7 mX cm 2 with a V B of 250 V [5], and almost meanwhile, 80V class double trenches MOSFETs with a planar drain or a plug drain were studied by them [6][7][8]. In 2011, trench power MOSFETs based silicon-on-insulator (SOI) were investigated by Xiaorong Luo [9,10], and after which, Zhigang Wang proposed a L-Shaped Trench SOI LDMOS in 2012 [11]. Orouji and Mehrad proposed an inserted P-layer in trench oxide (IPT-LDMOS) in [12].…”

A novel power LDMOSFET structure with high breakdown voltage

“…In the case of discrete LDMOSFET, the epitaxial layer growth on the substrate is used to achieve high BV and low on-resistance [1]. However, the drawback of discrete LDMOSFET is that it could not be integrated with logic circuit even though it improves the performance with epitaxial growth process.…”