2021
DOI: 10.1002/adma.202104960
|View full text |Cite
|
Sign up to set email alerts
|

Ultralow Power Optical Synapses Based on MoS2 Layers by Indium‐Induced Surface Charge Doping for Biomimetic Eyes

Abstract: Biomimetic eyes, with their excellent imaging functions such as large fields of view and low aberrations, have shown great potentials in the fields of visual prostheses and robotics. However, high power consumption and difficulties in device integration severely restrict their rapid development. In this study, an artificial synaptic device consisting of a molybdenum disulfide (MoS2) film coated with an electron injection enhanced indium (In) layer is proposed to increase the channel conductivity and reduce the… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

0
69
0

Year Published

2021
2021
2024
2024

Publication Types

Select...
8

Relationship

1
7

Authors

Journals

citations
Cited by 74 publications
(73 citation statements)
references
References 59 publications
0
69
0
Order By: Relevance
“…Such a low power consumption is due to the p-n junction at the WSe 2 /In 2 Se 3 interface which suppresses the PSC to the level of 10 −11 A. Furthermore, in Figure 6d, we compare the power consumption of the present heterojunction device with that of the reported artificial synaptic devices in the literature [40][41][42][43][44][45][46][47][48][49][50][51][52][53][54] including both electrical synaptic devices and photonic synapses. It shows that the power consumption per spike of our WSe 2 /In 2 Se 3 heterostructure synaptic devices is in the lowest class among these synaptic transistors.…”
Section: Swir Range Response and Low Power Consumption Characteristic...mentioning
confidence: 94%
“…Such a low power consumption is due to the p-n junction at the WSe 2 /In 2 Se 3 interface which suppresses the PSC to the level of 10 −11 A. Furthermore, in Figure 6d, we compare the power consumption of the present heterojunction device with that of the reported artificial synaptic devices in the literature [40][41][42][43][44][45][46][47][48][49][50][51][52][53][54] including both electrical synaptic devices and photonic synapses. It shows that the power consumption per spike of our WSe 2 /In 2 Se 3 heterostructure synaptic devices is in the lowest class among these synaptic transistors.…”
Section: Swir Range Response and Low Power Consumption Characteristic...mentioning
confidence: 94%
“…An open-mesh design was adopted to release the induced strain effectively during the integration In another example, a hemispherical synaptic PD array with a high energy efficiency was developed by depositing discontinuous indium islands on a hemispherical MoS 2 film [see Fig. 5(e)] [75]. The hemispherical MoS 2 film was grown on a hemispherical quartz substrate; thus, other device design strategies, such as strain-isolation structures or Kirigami device designs, were not required to achieve a curved form factor.…”
Section: B Neuromorphic-type Electronic Eyes Based On Curved Synaptic...mentioning
confidence: 99%
“…Recently, an artificial synaptic device made of MoS 2 film coated with an electron injection enhanced indium (In) layer has been proposed to increase channel conductivity and reduce power consumption by up to 68.9 FJ per spike, which is hundreds of times lower than that of optoelectronic artificial synapses previously reported in the literature. [61] Such type of design strategies provided a highly effective neural architecture with associative learning activity and diverse types of synaptic plasticity through multimode stimuli including photoactive mood.…”
Section: D Materialsmentioning
confidence: 99%