Ultralow noise high gain transimpedance amplifier for characterizing the low frequency noise of infrared detectors

Abstract

Articles you may be interested inDevice reliability study of high gate electric field effects in AlGaN/GaN high electron mobility transistors using low frequency noise spectroscopy An ultralow noise transimpedance amplifier with a gain of 10 10 , a bandwidth greater than 10 kHz, and an input equivalent noise power spectral density of 1.7ϫ10 Ϫ30 A 2 /Hz ͑single sided͒ for frequencies less than 10 Hz and a level of 5ϫ10 Ϫ30 A 2 /Hz at 1 kHz is described. This level of performance is achieved with standard electronic devices, rather than batteries, powering the amplifier. Very good agreement between theoretical and experimental noise measurements is achieved due to careful measurement and modeling of the significant noise sources. It is shown that the noise level of the 10 10 ⍀ feedback resistor increases with frequency and contributes a significant level of noise for frequencies in the kHz frequency range. The usefulness of the amplifier is demonstrated through measurement of the noise of a HgCdTe planar photovoltaic 3-5 m mid-wavelength infrared detector cooled to 80 and 120 K.

Low-frequency noise characterization of very large value resistors

“…The fits superimposed to the curves of Fig. 4 are obtained according to (17) and (18). The circles at 1 Hz result from the interpolation of the LF noise with the square of the bias voltage, which demonstrates that the model is adequate.…”

“…A possible cause for the observed effect is attributed to the distributed nature of this class of resistors. Since when working with large value resistors the presence of a parasitic shunting capacitance must always be considered, one convenient way to account for this effect is to add to the noise an empirical correcting term , proportional to the frequency [18] ( 18) In (18), in addition to the first term , the second term is the LF noise and the last term is the thermal noise, with being the Boltzmann constant, the resistor value, and the absolute temperature. The model of (18) has been used to fit, and is superimposed to, the data of Fig.…”

Resonant noise-canceling current front-end for high-resolution impedance sensing

“…are the equivalent input current noise and the equivalent input voltage noise, respectively, of the operational amplifier and k is the Boltzmann constant. The first three terms can be reduced using a FET operational amplifier and a large feedback resistor [12]. In order to extend the bandwidth of the TIA, advanced transimpedance architectures use the amplifier as an integrator stage [13].…”

“…In this work we address the ultimate resolution performance of the TIA current front-end by proposing a simple and radical solution: adding an inductor at the input in order to lower the noise at the LC resonance frequency. We demonstrate a tenfold noise performance improvement with respect to the stateof-the-art current amplifiers [12,13]. The suppression of the equivalent voltage noise is achieved by nullifying the admittance at the virtual ground node with an inductive reactance tuned to counterbalance the capacitive one.…”

1/f noise in HgCdTe infrared gated photodiodes

“…For low noise measurements an in-house designed ultralow noise, high bandwidth transimpedance amplifier was used. 8 This amplifier has a gain of 10 10 , bandwidth of 17.8kHz, and an input noise current of 1.7 × 10 −30 A 2 /Hz (1.3fA/ √ Hz). Measurements were made inside a Faraday cage with the cryostat disconnected from the turbo pump.…”