Ultralow loss single layer submicron silicon waveguide crossing for SOI optical interconnect

Ma, Yangjin; Zhang, Yi; Yang, Shaoshi; Novack, Ari; Ding, Ran; Lim, Andy Eu-Jin; Lo, Guo‐Qiang; Baehr‐Jones, Tom; Hochberg, Michael

doi:10.1364/oe.21.029374

Cited by 208 publications

(84 citation statements)

References 19 publications

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“…In Si, compact, fully-etched waveguide crossings fabricated using photolithography (i.e., without subwavelength features) at best have an insertion loss in the range of 0.04-0.1 dB and a crosstalk of −35 dB in the C-band [31], and using genetic algorithms, an insertion loss better than 0.04 dB can be achieved over a bandwidth of about 45 nm and crosstalk can be improved to − 40 dB [32]. To reduce the insertion loss, the index contrast of the Si waveguides is lowered at the crossing by using the partially-etched level at the expense of a larger crossing size [33], [34]; losses as low as 0.015 dB per crossing have been predicted [34].…”

Section: Waveguide Crossingsmentioning

confidence: 99%

Multilayer Silicon Nitride-on-Silicon Integrated Photonic Platforms and Devices

Sacher

Huang

et al. 2015

J. Lightwave Technol.

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207

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We review and present additional results from our work on multilayer silicon nitride (SiN) on silicon-on-insulator (SOI) integrated photonic platforms over the telecommunication wavelength bands near 1550 and 1310 nm. SiN-on-SOI platforms open the possibility for passive optical functionalities implemented in the SiN layer to be combined with active functionalities in the SOI. SiN layers can be integrated onto SOI using a front-end or back-end of line integration process flow. These photonic platforms support low-loss SiN waveguides, low-loss and low-crosstalk waveguide crossings, and low-loss interlayer transitions using adiabatic tapers. Novel ultra-broadband and efficient grating couplers as well as polarization management devices are enabled by the close coupling between the silicon and SiN layers.

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Section: Waveguide Crossingsmentioning

confidence: 99%

Multilayer Silicon Nitride-on-Silicon Integrated Photonic Platforms and Devices

Sacher

Huang

et al. 2015

J. Lightwave Technol.

Self Cite

207

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“…Due to the high-index contrast of the silicon platform such as SOI, the insertion loss of a conventional waveguide crossing is around 0.15 dB. To reduce optical loss, waveguide crossing designed by using particle swarm optimization has been proposed and demonstrated, with a loss of −0.028 ± 0.009 dB for 1550 nm operating wavelength [40]. In this part, we introduce some waveguide crossing designs assisted by SWG structures.…”

Section: Waveguide Crossingsmentioning

confidence: 99%

1D Photonic Crystals: Principles and Applications in Silicon Photonics

Han¹

2018

Theoretical Foundations and Application of Photonic Crystals

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One-dimension (1D) photonic crystals have been widely used in silicon photonics due to its simple structure and multiple working regimes: diffraction, Bragg reflection, and subwavelength regimes. Thanks to recent development of photonic technologies and highresolution lithography, many 1D photonic crystal-assisted silicon integrated devices have been proposed and demonstrated to further increase integration density and improve device performance. This chapter first presents some fundamentals of 1D photonic crystals. An overview of the applications of 1D photonic crystals in silicon photonics is then given including grating couplers, waveguide crossings, multimode interference couplers, polarization-independent directional couplers, hybrid lasers, polarizers, and high-order mode filters, among others. Particular attention is paid to providing insight into the design strategies for these devices.

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“…1a is currently not included. We expect that adding the waveguide crossing should not affect the performance of the switch since progress in waveguide crossing designs has shown a very low crosstalk (lower than 37 dB in [17]). The microring is originally used as an add-drop filter, and the detailed device fabrication can be found in [3].…”

Section: Motivationmentioning

confidence: 99%

Single Microring-Based <inline-formula> <tex-math notation="LaTeX">$2\times 2$ </tex-math></inline-formula> Silicon Photonic Crossbar Switches

Nikolova

Calhoun

et al. 2015

IEEE Photon. Technol. Lett.

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Realizing small-footprint and energy-efficient optical switching fabrics is of crucial importance to solve the data movement challenges faced by optical interconnection networks. This article demonstrates silicon photonic 2×2 full crossbar switching functionality based on a single microring. The ultra-compact device is shown to successfully switch data channels from two input ports simultaneously. Data channels in both multiple and same wavelength switching experiments are measured to be error-free. Simulation shows that by optimizing some of the microring parameters crosstalk could be reduced. This work confirms the applicability of a single microring as a 2×2 switch element for on-chip optical interconnects.

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Ultralow loss single layer submicron silicon waveguide crossing for SOI optical interconnect

Cited by 208 publications

References 19 publications

Multilayer Silicon Nitride-on-Silicon Integrated Photonic Platforms and Devices

Multilayer Silicon Nitride-on-Silicon Integrated Photonic Platforms and Devices

1D Photonic Crystals: Principles and Applications in Silicon Photonics

Single Microring-Based <inline-formula> <tex-math notation="LaTeX">$2\times 2$ </tex-math></inline-formula> Silicon Photonic Crossbar Switches

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