2012
DOI: 10.1364/oe.20.012035
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Ultralow-loss, high-density SOI optical waveguide routing for macrochip interconnects

Abstract: We report optical waveguides up to one meter long with 0.026 dB/cm loss fabricated in a 300nm thick SOI CMOS process. Combined with tight bends and compact interlayer grating couplers, we demonstrate a complete toolbox for ultralow-loss, high-density waveguide routing for macrochip interconnects.

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Cited by 146 publications
(56 citation statements)
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“…Other loss mechanisms of the otherwise empty cell can be the vertical scattering of the slab mode due to surface roughness or absorption in the silicon layer. An upper estimate of these losses can be obtained from the measurements on multimode waveguides by Li et al, 27 namely, 0.03 dB/cm. This well documented limit is supported by the fact that the absorption loss of silicon with a doping concentration of 10 15 /cm 3 , which is typically used in silicon-on-insulator (SOI) platforms, is around 0.03 dB/cm.…”
Section: Theory For a 2d Integrating Cell With Additional Lossesmentioning
confidence: 99%
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“…Other loss mechanisms of the otherwise empty cell can be the vertical scattering of the slab mode due to surface roughness or absorption in the silicon layer. An upper estimate of these losses can be obtained from the measurements on multimode waveguides by Li et al, 27 namely, 0.03 dB/cm. This well documented limit is supported by the fact that the absorption loss of silicon with a doping concentration of 10 15 /cm 3 , which is typically used in silicon-on-insulator (SOI) platforms, is around 0.03 dB/cm.…”
Section: Theory For a 2d Integrating Cell With Additional Lossesmentioning
confidence: 99%
“…[23][24][25] Special treatments are proposed to decrease roughness and thus reduce the loss to 0.3 dB/cm. 26 Alternatively, the loss can be reduced to 0.03 dB/cm by using wide multimode waveguides, 27 the waveguide width ensuring small field intensities at the side walls and low roughness-induced scattering losses. The downside of such wide waveguides is the risk of mode-mixing, which can only be avoided by using bending radii of hundreds of micrometers, which limits the packing density.…”
Section: Introductionmentioning
confidence: 99%
“…Figures 4(a) and 4(b) show the evolutions of the temporal pulse and normalized output spectrum along propagation distance in the waveguide when the variation of γ(z), α 0 , 3PA, HON, and HOD are all considered. α 0 is chosen as 0.026 dB/cm [41][42][43] and the 3PA coefficient γ 3PA is 0.028 cm 3 /GW 2 [30]. HOD coefficients are considered up to 6-th order.…”
Section: Self-similar Pulse Compression In the Waveguide Tapermentioning
confidence: 99%
“…With a combination of resist reflowing to form a surface-tension confined smooth etch mask and a low DC bias dry etch to reduce roughness and damage in the silicon sidewalls, α 0 can be further reduced to 0.1 dB/cm [46]. By using the passive-split wafers, an α 0 as low as 0.026 dB/cm was measured [42]. We characterize the self-similar pulse compression with α 0 = 0.026, 0.1, 0.274, and 1 dB/cm by the evolutions of T FWHM and peak power of the pulse, as shown in Fig.…”
Section: Self-similar Pulse Compression In the Waveguide Tapermentioning
confidence: 99%
“…Surface grating couplers 2,3 have been widely used; however, they heavily depend on polarization. Thus, such couplers are usually designed to couple light in either transverse electric (TE) [4][5][6] or transverse magnetic (TM) 7 polarizations. Researchers have produced SOI-based grating couplers with high coupling efficiency and great bandwidth.…”
Section: Introductionmentioning
confidence: 99%