Ultralow-<i>k</i> Amorphous Boron Nitride Film for Copper Interconnect Capping Layer

Kim, Kiryong; Kim, Hyeong-Joon; Lee, Sun-Woo; Lee, Min Yung; Lee, Gyusoup; Park, Youngkeun; Kim, Heetae; Lee, Yun Hee; Kim, Minsu; Yeol, Kyung; Kim, Min Ju; Kim, Taek‐Soo; Shin, Hyeon Suk; Cho, Byung Jin

doi:10.1109/ted.2023.3258403

Cited by 2 publications

(2 citation statements)

References 34 publications

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“…In addition, theoretical predictions suggest that a certain density of carbon content improves the structural and thermal properties of α-BN:C [10]. More recently there is also a study on the use of α-BN for interconnect capping layers [11]. This last work reports on the plasma-enhanced chemical vapor deposition (PECVD) of 3 and 7 nm α-BN as a capping layer to replace PECVD-grown Si 3 N 4 .…”

Section: Introductionmentioning

confidence: 99%

Impact of hydrogenation on the stability and mechanical properties of amorphous boron nitride

Kaya,

Colombo,

Antidormi

et al. 2024

J. Phys. Mater.

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Interconnect materials with ultralow dielectric constant, and good thermal and mechanical properties are crucial for the further miniaturization of electronic devices. Recently, it has been demonstrated that ultrathin amorphous boron nitride (aBN) films have a very low dielectric constant, high density (above 2.1 g/cm3), high thermal stability, and mechanical properties. The excellent properties of aBN derive from the nature and degree of disorder, which can be controlled at fabrication, allowing tuning of the physical properties for desired applications. Here, we report an improvement in the stability and mechanical properties of amorphous boron nitride upon hydrogen doping. With the introduction of a Gaussian approximation potential (GAP) for atomistic simulations, we investigate the changing morphology of amorphous boron nitride with varying H doping concentrations. We found that for 8 at\% of H doping, the concentration of $sp^3$-hybridized atoms reaches to a maximum which leads to an improvement of thermal stability and mechanical properties by 20\%. These results will be a guideline for experimentalists and process engineers to tune the growth conditions of amorphous boron nitride films for numerous applications.

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Section: Introductionmentioning

confidence: 99%

Impact of hydrogenation on the stability and mechanical properties of amorphous boron nitride

Kaya,

Colombo,

Antidormi

et al. 2024

J. Phys. Mater.

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“…Metallic materials such as copper (Cu) and silver have been widely used in electric industries because of their excellent electrical conductivity [1][2][3]. However, these materials always exhibit high chemical reactivity at elevated temperatures, which can lead to severe surface oxidation and consequently degrade the electrical conductivity and lifetime of electronic devices [4][5][6].…”

Section: Introductionmentioning

confidence: 99%

Effect of Copper Surface Roughness on the High-Temperature Structural Stability of Single-Layer-Graphene

Yao,

Zhong,

Guo

et al. 2024

Materials

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Graphene (Gr) has shown great potential in the field of oxidation protection for metals. However, numerous studies have shown that Gr will suffer structural degradation on metal surface during high-temperature oxidation, which significantly limited the effectiveness of their oxidation protection. Therefore, understanding the degradation mechanism of Gr is of great interest to enhance their structural stability. Here, the effect of copper (Cu) surface roughness on the high-temperature structural stability of single-layer graphene (SLG) was examined using Cu covered with SLG as a model material. SLG/Cu with different roughness values was obtained via high-temperature annealing of the model material. After high-temperature oxidation at 500 °C, Raman spectra analysis showed that the defect density of the oxidized SLG increased from 41% to 81% when the surface roughness varied from 37 nm to 81 nm. Combined with density functional theory calculations, it was found that the lower formation energy of the C-O bond on rough Cu surfaces (0.19 eV) promoted the formation of defects in SLG. This study may provide guidance for improving the effectiveness of SLG for the oxidation protection of metallic materials.

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Ultralow-k Amorphous Boron Nitride Film for Copper Interconnect Capping Layer

Cited by 2 publications

References 34 publications

Impact of hydrogenation on the stability and mechanical properties of amorphous boron nitride

Impact of hydrogenation on the stability and mechanical properties of amorphous boron nitride

Effect of Copper Surface Roughness on the High-Temperature Structural Stability of Single-Layer-Graphene

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