Ultralarge scale integrated metallization and interconnects

Whitman, Christine Todd; Moslehi, Mehrdad M.; Paranjpe, Ajit; Velo, L.; Omstead, Tom

doi:10.1116/1.581700

Cited by 42 publications

(24 citation statements)

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“…Conformal coverage in metal and dielectric thin-film processing is a key factor for ultra-large scale integration (ULSI) applications or diffusion barrier layers; [1,2] however, as the device feature sizes constantly reduce, achieving conformality at these length scales becomes more challenging. Similar conformality challenges also apply to polymer thin-film coatings used for organic light emitting devices (OLEDs), medical implants, or membrane applications where conformality is a crucial requirement.…”

Section: Introductionmentioning

confidence: 99%

Tunable Conformality of Polymer Coatings on High Aspect Ratio Features

İnce

Gleason

2010

Chemical Vapor Deposition

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In this work we demonstrate that the concentration of vinyl bonds present in monomers adsorbed onto the surface determines the degree of conformality achieved by polymeric films grown over substrate topology by initiated (i)CVD. For microtrenches of varying aspect ratio, a ballistic model correlates the observed step coverage to a range of sticking coefficients of the initiating radicals, g, between 0.01 and 0.05. Increasing the surface concentration of the monomer results in higher values of g. In the deposition regime studied, g is independent of the concentration of radical initiators. Furthermore, g is insensitive to substrate temperature if the surface concentration of monomer is fixed. Using this knowledge, conformal coverage on microtrenches is demonstrated from both ethylene glycol diacrylate (EGDA) and neopentyl methacrylate (npMA). Additionally, the conformality permits templating of nanotubes of the mechanically robust and solvent-resistant iCVD-produced p(EGDA) crosslinked polymer.

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Section: Introductionmentioning

confidence: 99%

Tunable Conformality of Polymer Coatings on High Aspect Ratio Features

İnce

Gleason

2010

Chemical Vapor Deposition

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“…For example, patterned alkanethiols acted as a positive template (i.e., Cu was deposited only in the irradiated areas [413,414]), whereas SAMs of o-(40-methylbiphenyl-4-yl)-dodecyl thiol and of 1-10-biphenyl-4-thiol acted as negative templates where Cu was deposited only on the non-irradiated areas [415]. The electrodeposition of copper has attracted enormous interest for microelectronics as a reliable tool to deposit high-conductive material for on-chip interconnections [416]. Völker et al [417] studied the fabrication of copper nanostructures, and demonstrated a material preparation procedure combining e-beam lithography on self-assembled monolayers with selective electrochemical deposition.…”

Section: Metalsmentioning

confidence: 99%

Nanostructured Materials Synthesized Using Electrochemical Techniques

Oliveira

Freitas

Mattoso

et al. 2008

Nanostructured Materials in Electrochemistry

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The visualization and/or handling of atom clusters, or even individual atoms, has been achieved during the past 25 years. One of the most practical instruments for this purpose is the tunneling microscope, which was invented during the 1980s. On such a small scale, materials properties are not the same as those of a macroscopicsized substance. The first occasion on which a scientist proposed atom handling was in 1959, when Professor Richard Feynman [1], during a lecture at the California Institute Technology, suggested that in the near future engineers would be able to take atoms and place them exactly where they wanted to, without -of courseinfringing the laws of Nature. Today, Professor Feynmans lecture, which was entitled There is Plenty of Room at the Bottom, is considered a milestone of the current technological and scientific era.We can define nanoscience as the study of the phenomena and handling of structures on the atomic, molecular and macromolecular scale, where at least one dimension is significantly less than the others. And nanotechnology includes the design, characterization, and production of devices and systems on a nanometer scale. This definition of nanotechnology is wide-ranging, it is not a specific technology, all of the techniques based on physics, chemistry, biology, materials science and engineering -and/or using computers -leading to the development of materials and tools in such a way that the common point among them is the reduced dimension in which they operate. Among these applications are: increased storage and processing capacity for computers; the creation of new mechanisms for drug delivery; and the production of materials which are both lighter and more resistant than metals and plastics. Additional benefits of nanotechnology developments include energy saving, environmental protection, and the more efficient use of increasingly scarce raw materials.Today, these new investigations into material fabrication are focused mainly on nanostructured devices or, at least, microdevices. The most-often used technique for j117 Nanostructured Materials in Electrochemistry. Edited by Ali Eftekhari

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“…However, copper is known to diffuse rapidly through SiO 2 . [1][2][3][4][5][6] Thus, it is necessary to introduce a diffusion barrier between the Cu and the dielectrics. In addition, Cu also suffers from poor adhesion to SiO 2 dielectrics, due to its inability to reduce SiO 2 , which causes a rapid mass diffusion along the interface and surfaces, resulting in degraded reliability.…”

Section: Introductionmentioning

confidence: 99%

The effects of boron in the Cu(B)/Ti/SiO2 system on the Cu-Ti reaction, resistivity, and diffusion barrier properties

Yang

Lee

Park

et al. 2005

Journal of Elec Materi

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The behavior of boron in Cu(4.8at.%B)/Ti/SiO 2 was investigated as a function of temperature, and its influences on the Cu-Ti interaction, resistivity, and diffusion barrier properties were also studied. The results showed the formation of a titanium boride layer at the Cu-Ti interface, after heating the Cu(B)/Ti/SiO 2 at 400°C and higher, effectively served as a barrier for the Cu and Ti diffusion, and significantly enhanced the Cu (111) texture. The resistivity dropped from 16.3 to 2.33 µΩ-cm after heating at 600°C, and continued to decrease up to 800°C. As a result, the Cu, in the form of B(O) x /Cu/TiB 2 /Ti(O) x /SiO 2 multilayers, obtained by heating the Cu(B)/Ti/SiO 2 , showed high thermal stability with low resistivity and, thus, can be used as interconnections in advanced integrated circuits. Since the Cu, in the form of B(O) x /Cu/TiB 2 /Ti(O) x /SiO 2 multilayers, obtained by heating the Cu(B)/Ti/SiO 2 , showed high thermal stability with low resistivity, it can be used as interconnections in advanced integrated circuits.

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Ultralarge scale integrated metallization and interconnects

Cited by 42 publications

References 0 publications

Tunable Conformality of Polymer Coatings on High Aspect Ratio Features

Tunable Conformality of Polymer Coatings on High Aspect Ratio Features

Nanostructured Materials Synthesized Using Electrochemical Techniques

The effects of boron in the Cu(B)/Ti/SiO2 system on the Cu-Ti reaction, resistivity, and diffusion barrier properties

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