Ultrahigh-speed InP/InGaAs DHPTs for OEMMICs

Kamitsuna, H.; Matsuoka, Yutaka; Yoshida, Shoji; Shigekawa, Naoteru

doi:10.1109/22.954808

Cited by 51 publications

(19 citation statements)

References 10 publications

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“…They have also shown that heterojunction bipolar transistors (HBTs) are better suited for wideband photonics applications because HBTs, in which photonic bandwidth is closely related to electronic bandwidth, can have gain-bandwidth products in excess of several hundreds of gigahertz [1]. Recently, Kamitsuna et al have shown that a doubleheterojunction bipolar transistor (DHBT) exhibits a much faster optical response than that of an HBT because its double heterostructure acts as a potential barrier to low-speed holes generated in the subcollector layer [5]. They claimed that double-heterojunction phototransistors are highly compatible with DHBT's so that these components can be integrated into optoelectronic monolithic microwave integrated circuits (MMICs).…”

Section: Introductionmentioning

confidence: 99%

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Study of optical heterodyne mixing characteristics in an A1InAs/GaInAs transferred‐substrate double heterojunction bipolar transistor

Kwak

Kim

et al. 2004

Micro & Optical Tech Letters

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Section: Introductionmentioning

confidence: 99%

“…Parallel processing offers an effective tool to speed up computation time [4,5]. In order to shorten the execution time of the P-FFT code, the authors explore a way to run the code on supercomputers or a cluster of workstations by parallelizing the original algorithm.…”

Section: Introductionmentioning

confidence: 99%

Study of optical heterodyne mixing characteristics in an A1InAs/GaInAs transferred‐substrate double heterojunction bipolar transistor

Kwak

Kim

et al. 2004

Micro & Optical Tech Letters

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“…Monolithic integration of these devices enables the accommodation of most of the optoelectronic and electrical components in a base station, such as PDs and amplifiers into a single chip. Monolithic integration of a HPT with a heterojunction bipolar transistor (HBT) and its implementation as an oscillator [5] have already been demonstrated. The simplified base station circuitry will result in reducing the cost of base stations, thus lowering the cost of ROF links [3].…”

mentioning

confidence: 99%

High upconversion gain optoelectronic mixer using uni-travelling carrier phototransistors

et al. 2012

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The optoelectronic mixing performance of a uni-travelling carrier heterojunction phototransistor (UTC-HPT) was compared with its performance as a photodiode (PD). The upconverted output power in HPT mode was 24 dBm higher than in PD mode.Introduction: As the use of mobile devices has rapidly spread and data traffic for multimedia has surged, the demand for bandwidth and mobile accessibility for high data rate communication has greatly increased in the past few years. Radio-over-fibre (ROF) systems have been considered as a possible solution for future high data rate wireless broadband communication. An optoelectronic mixer (OEM) is one of the key components in ROF communication systems because of the requirement for frequency up-and downconversion. Several optoelectronic mixers using uni-travelling carrier (UTC) photodiodes (PDs) [1] or heterojunction phototransistors (HPTs) have been demonstrated [2] in ROF applications. Although the UTC-PD OEM showed great potential, high optical incident power is required to get high output current because the UTC-PD lacks internal gain. When used in ROF link applications, the UTC-PD OEM results in a large optical link loss budget. On the contrary, ROF links using HPTs can be designed with a smaller optical link loss budget due to the HPT's internal gain. Lower link loss decreases the total link noise figure [3]. Therefore, more energy-efficient ROF links can be built if HPTs were employed.Another advantage of using a HPT in a ROF link is the possibility of making an on-chip base station because a HPT can be used in several different components such as an oscillator [4] or a mixer. Monolithic integration of these devices enables the accommodation of most of the optoelectronic and electrical components in a base station, such as PDs and amplifiers into a single chip. Monolithic integration of a HPT with a heterojunction bipolar transistor (HBT) and its implementation as an oscillator [5] have already been demonstrated. The simplified base station circuitry will result in reducing the cost of base stations, thus lowering the cost of ROF links [3].In this reported work, the OE mixing performance of a UTC-HPT was compared with its PD mode operation to explore the possibility of building ROF links with low power consumption. In our previous report [6], we showed that our UTC-HPT could work as a HBT by showing that it had a common emitter current gain which varied from 140 to 240. Our UTC-HPT is a double heterojunction phototransistor (DHPT) that puts in an InP emitter layer on top of a UTC PD structure. An OEM based on a UTC PD can be easily switched to an OEM based on a UTC-HPT to take advantage of an internal gain.

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“…The optoelectronic millimeter-wave monolithic integrated circuit (OEMMIC) is quite attractive to users of microwave photonics systems and high speed optical communication systems [1]. Specifically, long wavelength photoreceivers and microwave/millimeter-wave photoreceivers, each incorporating photodetectors and preamplifier electronics on the same chip, Manuscript have been focused on OEMMICs fabricated by InP based technology.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and Characteristics of an InP Single HBT and Waveguide PD on Double Stacked Layers for an OEMMIC

Kim¹,

Kim²,

Hong³

et al. 2004

ETRI J

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Ultrahigh-speed InP/InGaAs DHPTs for OEMMICs

Cited by 51 publications

References 10 publications

Study of optical heterodyne mixing characteristics in an A1InAs/GaInAs transferred‐substrate double heterojunction bipolar transistor

Study of optical heterodyne mixing characteristics in an A1InAs/GaInAs transferred‐substrate double heterojunction bipolar transistor

High upconversion gain optoelectronic mixer using uni-travelling carrier phototransistors

Fabrication and Characteristics of an InP Single HBT and Waveguide PD on Double Stacked Layers for an OEMMIC

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