Ultrahigh-sensitivity CdS photoconductors with instant response and ultralow power consumption for detection in low-light environments

Lin, Keng‐Te; Tseng, Shao-Chin; Chen, Hsuen‐Li; Lai, Yung‐Cheng; Chen, Szu-Huang; Tseng, Yi-Chuan; Chu, Ting-Wei; Lin, Ming-Yen; Lu, Yen-Pei

doi:10.1039/c3tc30520a

Cited by 15 publications

(12 citation statements)

References 31 publications

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“…As a significant II–VI chalcogenide semiconductor, wurtzite CdS is a direct bandgap semiconductor with the band energy of 2.42 eV at room temperature . The particular characteristics of CdS such as excellent photoconductivity, good chemical stability, low work function (4.2 eV), and the working in visible spectrum, make CdS become a promising candidate in photodetectors . In recent years, many efforts have been used to improve the performance of the CdS photodetector with the novel type of device structure such as side‐gated field‐effect transistor .…”

Section: Introductionmentioning

confidence: 99%

Single CdS Nanorod for High Responsivity UV–Visible Photodetector

Zhao

Liu

et al. 2017

Advanced Optical Materials

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light absorption, [3] as well as the unique optoelectronic properties. [4][5][6][7] Therefore, many researchers are devoted to synthesize various of 1D nanostructures with controllable size, morphology, orientation, and crystallinity. Until now, various 1D nonostructures including nanorods (NRs), nanowires, nanotubes, and nanobelts [4,5,8,9] have been synthesized by many approaches such as chemical vapor deposition (CVD), focused ion beam, vapor-liquid-solid and chemical solutions. [10][11][12][13] Among 1D nanomaterials, 1D nanostructured semiconductor exhibited extensive application in light-emitting diode, transistors, lasers, solar cells, panel displays, field emitters, and photodetector devices. [4,12,14,15] As one of the most important optoelectronic devices, photodetectors can be used to convert the optical signal into electrical signal. Generally, the photodetectors based on 1D nanostructures show high sensitivity, large photocurrent gain, good reliability, and fast response time. [11,16,17] As we know, various 1D semiconductor nanomaterials have been used to fabricate photodetectors such as CdS, ZnO, ZnS, SnO 2 , WS 2 , CdTe, ZnTe, and In 2 Te 3 . [4,[18][19][20][21][22] It has been concluded that the photoresponse properties of these fabricated detectors are determined critically by a variety of parameters including selected materials, contact type of device, as well as the crystalline quality and dimension.As a significant II-VI chalcogenide semiconductor, wurtzite CdS is a direct bandgap semiconductor with the band energy of 2.42 eV at room temperature. [23] The particular characteristics of CdS such as excellent photoconductivity, good chemical stability, low work function (4.2 eV), and the working in visible spectrum, [24] make CdS become a promising candidate in photodetectors. [25] In recent years, many efforts have been used to improve the performance of the CdS photodetector with the novel type of device structure such as side-gated field-effect transistor. [26,27] While, in the area of the traditional Ohmic contact based photodetectors, many efforts still have been dedicated to improve the quantum efficiency, photoresponse ratio, sensitivity, and response time of 1D CdS nanowires photodetectors. [28][29][30] However, less attention has been paid to improve the responsivity of CdS nanwires photodetector despite it is the important parameter to evaluate the device performance such as the ability of the photoelectric conversion.1D nanoscale photodetectors have been extensively investigated for the unique geometry structure and novel physical and chemical properties. The 1D CdS materials have received much attention in the field due to its high photosensitivity and fast response, while how to achieve high responsivity is still in development, despite it is the crucial target to the excellent photo detector. Single crystal CdS nanorods (NRs) are synthesized on SiO 2 /Si substrate over large scale via the chemical vapor deposition method. The individual single CdS nanorod photodetector have been fabr...

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Section: Introductionmentioning

confidence: 99%

Single CdS Nanorod for High Responsivity UV–Visible Photodetector

Zhao

Liu

et al. 2017

Advanced Optical Materials

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“…12 However, attempts have not been made to extend the switchable emission to the near-infrared (NIR) spectral region, although optical properties in the NIR region have attractive advantages in bio-imaging, bio-analysis, 20 and night vision devices. 21,22 Especially, in biomedical imaging, the use of NIR emission is a promising approach because it can provide noninvasive and background signal free images. 23 Based on these advantages, NIR dyes featuring absorption and emission bands in the 700-1200 nm spectral range, are currently being studied extensively due to the high interest in various applications ranging from bioimaging to NIR modulation devices and dark eld viewing devices.…”

Section: Introductionmentioning

confidence: 99%

NIR electrochemical fluorescence switching from polymethine dyes

et al. 2014

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International audienceA polymethine dye was used as a fluorophore and an electroactive modulator in order to achieve reversible electrochemical fluorescence switching in the near infrared (NIR) region. An NIR emissive polymethine dye, 3H-indolium, 2-[2-[2-chloro-3-[2-[1,3-dihydro-3,3-dimethyl-1-(phenylmethyl)-2H-indol-2-ylidene]ethylidene]-5-(1,1-dimethylethyl)-1-cyclohexen-1-yl]ethenyl]-3,3-dimethyl-1-(phenylmethyl)-bromide (PM1), displayed high absorption and emission in the NIR region. In addition, it showed a relatively reversible electrochemical reaction between −0.5 and 1.1 V vs. Ag wire. In contrast, a keto group (C[double bond, length as m-dash]O) bridged polymethine analogue, 2,6-bis[2-(1,3-dihydro-1-hexyl-3,3-dimethyl-2H-indol-2-ylidene)ethylidene]-4-(1,1-dimethylethyl)cyclohexanone (PM2), showed an irreversible electrochemical reaction, possibly due to the keto group interrupting the full conjugation of the entire molecule in PM2. The reversible redox reaction of PM1 allowed electrochemical fluorescence switching in the NIR region for the first time. The NIR fluorescence switching was visually observable through a visible light cut-off filter with a cyclability of over 100

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“…Doping with other elements is one of the efficient ways to modify the physical and chemical properties of TiO 2 materials. 24 Fig. 4 Optimum working temperature of the sensors to xylene gas at a concentration of 100 ppm.…”

Section: Gas Sensing Property Of the Devicesmentioning

confidence: 99%