Ultrahigh-Sensitivity and Fast-Speed Solar-Blind Ultraviolet Photodetector Based on a Broken-Gap van der Waals Heterodiode

Abstract

Broad-bandgap semiconductor-based solar-blind ultraviolet (SBUV) photodetectors have attracted considerable research interest because of their broad applications in missile plume tracking, flame detectors, environmental monitoring, and optical communications due to their solar-blind nature and high sensitivity with low background radiation. Owing to its high light absorption coefficient, abundance, and wide tunable bandgap of 2–2.6 eV, tin disulfide (SnS2) has emerged as one of the most promising compounds for application in UV–visible optoelectronic devices. However, SnS2 UV detectors have some undesirable properties such as slow response speed, high current noise level, and low specific detectivity. This study reports a metal mirror-enhanced Ta0.01W0.99Se2/SnS2 (TWS) van der Waals heterodiode-based SBUV photodetector with an ultrahigh photoresponsivity (R) of ∼1.85 × 104 AW–1 and a fast speed with rising time (τr) of 3.3 μs and decay time (τd) of 3.4 μs. Notably, the TWS heterodiode device exhibits a significantly low noise equivalent power of ∼1.02 × 10–18 W Hz–1/2 and a high specific detectivity of ∼3.65 × 1014 cm Hz1/2 W–1. This study provides an alternative method for designing fast-speed SBUV photodetectors with enormous potential in applications.

Optimal design of graphene-based plasmonic enhanced photodetector using PSO

“…One of the most important engineering issues is the discussion of photodetectors. Due to their importance in a wide range of applications, these optical devices, such as imaging devices 74 , 75 , optical communication 17 , 26 , environmental monitoring 10 , 17 , and Medical diagnoses 76 , 77 play an important role. Therefore, the optimization of these optical devices is very important.…”

“…Most of the photodetectors used in silicon photonics are germanium-based 10 – 12 , but this type of photodetector has limitations in integrating with CMOS technology 13 , 14 . Currently, various materials are used in the manufacture of photodetectors, including silicon-based photodetectors 15 – 22 , gallium arsenide-based photodetectors 23 – 26 , aluminum gallium nitride-based photodetectors 11 , 17 , 27 , indium gallium arsenide-based photodetectors 28 , 29 , indium arsenide-based photodetectors 30 , and photodetectors based on a combination of different materials 31 are among these cases. However silicon-based photodetectors are of double importance due to their compatibility with CMOS technology 32 .…”

A Self‐Powered Photodetector Based on Graphene Enhanced WSe2/PtSe2 Heterodiode with Fast Speed and Broadband Response

“…The device was placed on a metal mirror electrode, which is used to realize good contact and shorten the lateral photocarriers’ transport distance. [ 22 ] The device exhibits excellent performances including ultrabroad photovoltaic response from visible to MWIR (405–3366 nm), ultrahigh light I on / I off ratio >10 8 at 0 V bias and 10 5 at −1 V bias, ultra‐fast speed of τ r = 0.9 µs and τ d = 1.5 µs. Notably, the device demonstrated a remarkable photovoltaic response, with a high fill factor of 0.4 and a competitive PCE of 3.45%.…”

Ga2O3 Schottky Avalanche Solar‐Blind Photodiode with High Responsivity and Photo‐to‐Dark Current Ratio

“…Solar-blind photodetectors attract high attention in recent years for their applications in missile tracking, deep space exploration, fire monitoring, and so on. [1][2][3][4][5][6][7][8][9] Currently, commercial solar-blind photodetectors are mainly based on silicon, however, they usually require expensive and bulky optical filters and suffer low thermal stability and low sensitivity. [10,11] Recent development of wide bandgap semiconductors such as MgZnO, AlGaN, and Ga 2 O 3 allow to realize solar-blind photodetection without optical DOI: 10.1002/aelm.202300297 filters.…”