Ultrahigh‐<i>Q</i> Photonic Nanocavity Devices on a Dual Thickness SOI Substrate Operating at Both 1.31‐ and 1.55‐µm Telecommunication Wavelength Bands

Kuwabara, Mitsuki; Noda, Susumu; Takahashi, Yasushi

doi:10.1002/lpor.201800258

Cited by 19 publications

(5 citation statements)

References 54 publications

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“…By using ultra‐thin flakes, fine tuning can be done with high predictability and reproducibility because of the quantized shifts arising from the atomically precise thickness. This is in contrast to continuous mode shifts obtained in conventional methods such as chemical etching, [ 42 ] coating of photochromic films, [ 43 ] and condensation of gases. [ 44 ] In addition, the stackable and removable 2D materials offer a new degree of freedom for reconfigurable cavities.…”

Section: Resultsmentioning

confidence: 75%

Quantization of Mode Shifts in Nanocavities Integrated with Atomically Thin Sheets

Fang

Yamashita

Fujii

et al. 2022

Advanced Optical Materials

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The unique optical properties of 2D layered materials are attractive for achieving increased functionality in integrated photonics. Owing to the van der Waals nature, these materials are ideal for integrating with nanoscale photonic structures. Here a carefully designed air‐mode silicon photonic crystal nanobeam cavity for efficient control through 2D materials is reported. By systematically investigating various types and thicknesses of 2D materials, the authors are able to show that enhanced responsivity allows for giant shifts of the resonant wavelength. With atomically precise thickness over a macroscopic area, few‐layer flakes give rise to quantization of the mode shifts. The dielectric constant of the flakes is extracted and found to be independent of the layer number down to a monolayer. Flexible reconfiguration of a cavity is demonstrated by stacking and removing ultrathin flakes. With an unconventional cavity design, these results open up new possibilities for photonic devices integrated with 2D materials.

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Section: Resultsmentioning

confidence: 75%

Quantization of Mode Shifts in Nanocavities Integrated with Atomically Thin Sheets

Fang

Yamashita

Fujii

et al. 2022

Advanced Optical Materials

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show abstract

“…By using ultra-thin flakes, fine tuning can be done with high predictability and reproducibility because of the quantized shifts arising from the atomically precise thickness. This is in contrast to continuous mode shifts obtained in conventional methods such as chemical etching [39], coating of photochromic films [40], and condensation of gases [41]. In addition, the stackable and removable 2D materials offer a new degree of freedom for reconfigurable cavities.…”

Section: Resultsmentioning

confidence: 85%

Quantization of mode shifts in nanocavities integrated with atomically thin sheets

Fang,

Yamashita,

Fujii

et al. 2022

Preprint

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“…Compared with the earlier reported Si Raman lasers, [141] the PhC nanocavity enables the laser size with a much smaller scale for large-area integration in PIC. [145] In 2019, a follow-up work by Kuwabara et al [148] demonstrated two PhC nanocavity Si Raman lasers on the same chip with different layer thicknesses. The two lasers with different substrate thicknesses are fabricated with the same process.…”

Section: Raman Lasers On Siliconmentioning

confidence: 99%

“…[ 145 ] In 2019, a follow‐up work by Kuwabara et al. [ 148 ] demonstrated two PhC nanocavity Si Raman lasers on the same chip with different layer thicknesses. The two lasers with different substrate thicknesses are fabricated with the same process.…”

Section: Raman Lasers On Siliconmentioning

confidence: 99%

Integrated Lasers on Silicon at Communication Wavelength: A Progress Review

Chen

et al. 2022

Advanced Optical Materials

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including high refractive index contrast with its oxide material, low loss at communication wavelength regime, and significant thermo-optic coefficient for tuning. Contributed by these advantages, various photonic components have been demonstrated on integrated Si photonics platform, including mode couplers, [3][4][5][6] tunable filters, [7][8][9][10] and optical modulators. [11][12][13][14] However, Si itself is an indirect bandgap material, which limits its light emission efficiency. Laser sources on Si remain to be the challenging component for photonics integration. The requirements of an integrated laser source not only cover laser performance parameters such as optical power, threshold, pumping scheme, and stability, but also low-cost and high-volume production. Researchers are trying to come up with different ways to integrate lasers on Si. The most common way is to integrate III-V lasers on Si photonics platform, through bonding integration or direct growth approach. Alternatively, group IV materials such as germanium (Ge) and germanium tin (GeSn) alloy-based lasers show promise, with significant research progress in the past decade. Raman effect has also been explored to demonstrate lasers on Si. Such kind of laser enables lasing from the Si material itself and has drawn a lot of interest in the research community. Also, rare earth (RE) elements can be doped within photonics layer to make lasers on Si, which is similar to the idea of RE-doped optical fiber laser. RE-doped laser has the advantage of low noise and high thermal stability. Comprehensive reviews on Si-integrated lasers were published more than 6 years ago. [15,16] In the meanwhile, to the best of our knowledge, the review for the most recent progress on Siintegrated lasers covering the above-mentioned approaches is still lacking.In this review, we have summarized the recent development progress of lasers integrated on Si in the past two decades, with the focus on the wavelength regimes for communication. These lasers are categorized based on their gain media, including III-V semiconductor laser, Ge/GeSn laser, Si-based Raman laser, and RE-doped laser on Si. For III-V laser, different integration approaches are discussed, covering flip-chip integration, transfer printing integration, hybrid bonding, and direct growth method. The review is organized in the following way: it starts from background information as presented in Section 1. III-V laser, Ge/GeSn laser, Raman laser, and RE-doped laser

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Ultrahigh‐Q Photonic Nanocavity Devices on a Dual Thickness SOI Substrate Operating at Both 1.31‐ and 1.55‐µm Telecommunication Wavelength Bands

Cited by 19 publications

References 54 publications

Quantization of Mode Shifts in Nanocavities Integrated with Atomically Thin Sheets

Quantization of Mode Shifts in Nanocavities Integrated with Atomically Thin Sheets

Quantization of mode shifts in nanocavities integrated with atomically thin sheets

Integrated Lasers on Silicon at Communication Wavelength: A Progress Review

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