2017
DOI: 10.1038/s41565-017-0023-9
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Ultrahard carbon film from epitaxial two-layer graphene

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Cited by 204 publications
(217 citation statements)
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References 40 publications
(82 reference statements)
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“…Notably, we obtain that the vertical distance from the exposed buffer layer to the nearby 1-layer region is approximately 1.2±0.3 nm, a value which accounts for the roughness of the buffer layer (≈ 0.3 nm) [41,48], the thickness of the newly formed graphene layer (1-layer, 0.34 nm) on top of BfL, and the thickness of the removed unit cell of 4H-SiC during sublimation (≈ 1 nm) [49]. comparable to the stiffness of freshly cleaved bare silicon carbide [10], since oxidation of external layers of SiC plays a role in reducing the mechanical stiffness of this substrate at the nanoscale after long exposition to air. Therefore, 1-layer epitaxial graphene exhibit stiffness at the nanoscale higher than the SiC substrate, as already discussed in our previous work [10,11], while we report herein that the same behavior is not observed in the 2-layer graphene film.…”
Section: Afm Morphology and Friction Map Of Epitaxial Graphene On Sicmentioning
confidence: 84%
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“…Notably, we obtain that the vertical distance from the exposed buffer layer to the nearby 1-layer region is approximately 1.2±0.3 nm, a value which accounts for the roughness of the buffer layer (≈ 0.3 nm) [41,48], the thickness of the newly formed graphene layer (1-layer, 0.34 nm) on top of BfL, and the thickness of the removed unit cell of 4H-SiC during sublimation (≈ 1 nm) [49]. comparable to the stiffness of freshly cleaved bare silicon carbide [10], since oxidation of external layers of SiC plays a role in reducing the mechanical stiffness of this substrate at the nanoscale after long exposition to air. Therefore, 1-layer epitaxial graphene exhibit stiffness at the nanoscale higher than the SiC substrate, as already discussed in our previous work [10,11], while we report herein that the same behavior is not observed in the 2-layer graphene film.…”
Section: Afm Morphology and Friction Map Of Epitaxial Graphene On Sicmentioning
confidence: 84%
“…The proposed mechanism for room-temperature formation of diamene from 1-layer plus BfL structures under pressure is a progressive re-hybridization of sp 2 2D layers into sp 3 diamene, which is an ultra-stiff and ultra-hard structure. The formation of the diamond-like diamene is favored by saturation at the BfL/substrate interface of the dangling bonds formed during the pressure induced rearrangement of atoms in the 1-layer/BfL layers [10].…”
Section: å-Indentation Of Epitaxial Graphene and Exfoliated Graphene mentioning
confidence: 99%
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“…A configuration where graphene sheets present an interlayer distance lower than the stable equilibrium distance could be achieved by applying a fixed compression force normal to the stacked sheets. For example, experiments aiming to investigate the sliding motion between graphene sheets under metastable conditions as depicted in Figure 6d could be organized in the following steps: (1) generation of double layers of graphene (or graphene oxide), for instance by Langmuir-Blodgett assembly [41]; (2) compression of the double layers of graphene by means of a nano-indenter [42]; and (3) measurement of the forces occurring during the sliding dynamics by means of a nano-manipulator [26]. Note that characterization techniques such as atomic force microscopy (AFM) or in situ Raman mapping [43], as well as atomistic simulations [44,45], could support the experimental implementation and analysis of this system.…”
Section: Sheet-sheet Slidingmentioning
confidence: 99%