Ultrafast switching in magnetic tunnel junction based orthogonal spin transfer devices

Liu, H.; Bedau, D.; Backes, Dirk; Katine, J. A.; Langer, Juergen; Kent, Andrew D.

doi:10.1063/1.3527962

Cited by 154 publications

(129 citation statements)

References 16 publications

(23 reference statements)

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“…Owing to their small size (∼ 10 nm) and large velocities (∼ 100 m/s) 9,10 , controllable domain wall motion represents holds real potential for tailoring functional devices with fast writing speeds. In addition, there has been several proposals [11][12][13][14] related to magnetic memory functionality due to the non-volatile nature of magnetic domains. Walker breakdown 15 is nevertheless a The spin-orbit interaction may be either intrinsic or induced via a heavy metal proximate host.…”

Section: Introductionmentioning

confidence: 99%

Asymmetric ferromagnetic resonance, universal Walker breakdown, and counterflow domain wall motion in the presence of multiple spin-orbit torques

Linder

Alidoust

2013

Phys. Rev. B

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We study the motion of several types of domain wall profiles in spin-orbit coupled magnetic nanowires and also the influence of spin-orbit interaction on the ferromagnetic resonance of uniform magnetic films. Whereas domain wall motion in systems without correlations between spin-space and real-space is not sensitive to the precise magnetization texture of the domain wall, spin-orbit interactions break the equivalence between such textures due to the coupling between the momentum and spin of the electrons. In particular, we extend previous studies by fully considering not only the field-like contribution from the spin-orbit torque, but also the recently derived Slonczewski-like spin-orbit torque. We show that the latter interaction affects both the domain wall velocity and the Walker breakdown threshold non-trivially, which suggests that it should be accounted in experimental data analysis. We find that the presence of multiple spin-orbit torques may render the Walker breakdown to be universal in the sense that the threshold is completely independent on the material-dependent Gilbert damping α, non-adiabaticity β, and the chirality σ of the domain wall. We also find that domain wall motion against the current injection is sustained in the presence of multiple spin-orbit torques and that the wall profile will determine the qualitative influence of these different types of torques (e.g. field-like and Slonczewski-like). In addition, we consider a uniform ferromagnetic layer under a current bias, and find that the resonance frequency becomes asymmetric against the current direction in the presence of Slonczewski-like spin-orbit coupling. This is in contrast with those cases where such an interaction is absent, where the frequency is found to be symmetric with respect to the current direction. This finding shows that spin-orbit interactions may offer additional control over pumped and absorbed energy in a ferromagnetic resonance setup by manipulating the injected current direction.

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Section: Introductionmentioning

confidence: 99%

Asymmetric ferromagnetic resonance, universal Walker breakdown, and counterflow domain wall motion in the presence of multiple spin-orbit torques

Linder

Alidoust

2013

Phys. Rev. B

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“…2 The interest in microwave technologies relies on the fact that under the correct conditions, a spin polarized current transfers angular momentum to the magnetic structure, the Spin Transfer Torque (STT), giving rise to sustained oscillations at microwave frequencies. STT has found applications in a wide range of research areas including nonvolatile information storage, such as STT-magnetic random access memory (STT-MRAM) 3 and domain-wall race-track memory, 4 as well as in magnetic microwave oscillators commonly known as spin-torque oscillators (STOs) or spin torque vortex oscillators (STVOs), if a vortex state is present. 2,5 These structures are of great commercial interest due to the fact that they are highly tuneable and very large scale integration (VLSI) compatible.…”

mentioning

confidence: 99%

Voltage controlled modification of flux closure domains in planar magnetic structures for microwave applications

Parkes

Beardsley

Bowe

et al. 2014

Applied Physics Letters

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Voltage controlled modification of the magnetocrystalline anisotropy in a hybrid piezoelectric/ferromagnet device has been studied using Photoemission Electron Microscopy with X-ray magnetic circular dichroism as the contrast mechanism. The experimental results demonstrate that the large magnetostriction of the epitaxial Fe81Ga19 layer enables significant modification of the domain pattern in laterally confined disc structures. In addition, micromagnetic simulations demonstrate that the strain induced modification of the magnetic anisotropy allows for voltage tuneability of the natural resonance of both the confined spin wave modes and the vortex motion. These results demonstrate the possibility for using voltage induced strain in low-power voltage tuneable magnetic microwave oscillators.

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“…of magnitude lower than the STT switching current threshold ensuring minimum contribution from STT. 12 The oscillatory behavior in the probability plot is a manifestation of the precessional motion of magnetization about the effective magnetic field axis, induced by the application of voltage pulse.…”

Section: -4 Lourembam Et Al Aip Advances 8 055915 (2018)mentioning

confidence: 99%

“…[1][2][3][4][5][6][7][8][9] While standby power is dramatically reduced because of non-volatility of MTJs, the writing energy utilizing STT is at best sub-pJ/bit which is still larger than their semiconductor memory counterparts. [10][11][12] One of the alternative low power writing schemes in MTJs is by means of voltage controlled magnetic anisotropy (VCMA). [13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28] Write energies as low as 6 fJ/bit has been demonstrated using this scheme.…”

Section: Introductionmentioning

confidence: 99%

Role of CoFeB thickness in electric field controlled sub-100 nm sized magnetic tunnel junctions

2017

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We report a comprehensive study on the role of the free layer thickness (tF) in electric-field controlled nanoscale perpendicular magnetic tunnel junctions (MTJs), comprising of free layer structure Ta/Co40Fe40B20/MgO, by using dc magnetoresistance and ultra-short magnetization switching measurements. Focusing on MTJs that exhibits positive effective device anisotropy (Keff), we observe that both the voltage-controlled magnetic anisotropy (ξ) and voltage modulation of coercivity show strong dependence on tF. We found that ξ varies dramatically and unexpectedly from ∼−3 fJ/V-m to ∼−41 fJ/V-m with increasing tF. We discuss the possibilities of electric-field tuning of the effective surface anisotropy term, KS as well as an additional interfacial magnetoelastic anisotropy term, K3 that scales with 1/tF2. Voltage pulse induced 180° magnetization reversal is also demonstrated in our MTJs. Unipolar switching and oscillatory function of switching probability vs. pulse duration can be observed at higher tF, and agrees well with the two key device parameters — Keff and ξ.

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Ultrafast switching in magnetic tunnel junction based orthogonal spin transfer devices

Cited by 154 publications

References 16 publications

Asymmetric ferromagnetic resonance, universal Walker breakdown, and counterflow domain wall motion in the presence of multiple spin-orbit torques

Asymmetric ferromagnetic resonance, universal Walker breakdown, and counterflow domain wall motion in the presence of multiple spin-orbit torques

Voltage controlled modification of flux closure domains in planar magnetic structures for microwave applications

Role of CoFeB thickness in electric field controlled sub-100 nm sized magnetic tunnel junctions

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