Ultrafast spin-polarized lasing in a highly photoexcited semiconductor microcavity at room temperature

Hsu, Feng Kuo; Xie, Wei; Lee, Yi-Shan; Lin, Sheng Di; Lai, Chih-Wei

doi:10.1103/physrevb.91.195312

Cited by 22 publications

(17 citation statements)

References 149 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Polarization directions, found to be independent of the excitation power (not shown), correspond to the principal geometry axes of the trap. We do not observe a circular polarization of the emission reported previously for e-h plasma lasing in GaAs-based microcavities 23 . This is most likely due to a large degree of photonic disorder in our samples which governs the polarization properties of the emission.…”

Section: Resultscontrasting

confidence: 83%

“…So far, only one or two out of these three lasing regimes have been reported for a given structure, independently of the material system examined [8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27] . Thresholds for the onset of photon lasing involving excitons have been reported as two orders of magnitude 11,12,16,18 or a factor two 19,20 greater with respect to that of polariton type.…”

mentioning

confidence: 99%

See 1 more Smart Citation

Triple threshold lasing from a photonic trap in a Te/Se-based optical microcavity

et al. 2019

View full text Add to dashboard Cite

Lasing relies on light amplification in the active medium of an optical resonator. There are three lasing regimes in the emission from a quantum well coupled to a semiconductor microcavity. Polariton lasing in the strong light-matter coupling regime arises from the stimulated scattering of exciton-polaritons. Photon lasing in the weak coupling regime relies on either of two mechanisms: the stimulated recombination of excitons, or of an electron-hole plasma. So far, only one or two out of these three regimes have been reported for a given structure, independently of the material system studied. Here, we report on all three lasing regimes and provide evidence for a three-threshold behavior in the emission from a photonic trap in a Se/Te-based planar microcavity comprising a single CdSe/(Cd,Mg)Se quantum well. Our work establishes the so far unsettled relation between lasing regimes that differ by their light-matter coupling strength and degree of electron-hole Coulomb correlation.

show abstract

Section: Resultscontrasting

confidence: 83%

mentioning

confidence: 99%

Triple threshold lasing from a photonic trap in a Te/Se-based optical microcavity

et al. 2019

View full text Add to dashboard Cite

show abstract

“…This type relates to responses and wafer samples in [4], [7], and is modelled with values of γ a and γ p , of 0.05 ns −1 and −0.35 ns −1 respectively. This type of response is commonly found in the spin VCSEL literature [3]- [8] and usually characterises spin amplification of the pump. A second type, found in the sample used in this work is characterised by a switch in S3 V C S E L to the opposite sign of S3 pump (figure 3a,c), accompanied by a large rotation of ψ V C S E L of nearly π/2 at each switching point ( figure 3b,d).…”

Section: A Solitary Spin Vcselmentioning

confidence: 85%

“…S PIN VCSELs -devices which utilise conservation of spin angular momentum in the electron-photon lasing processes -have been shown to possess a variety of unique characteristics. Properties such as threshold reduction [1], [2], spin amplification [3]- [5] polarisation control [5]- [8], and high frequency polarisation oscillations [9]- [12] have been demonstrated. These have raised awareness of the potential uses of spin lasers in future communications systems [13], [14].…”

Section: Introductionmentioning

confidence: 99%

Polarization Responses of a Solitary and Optically Injected Vertical Cavity Spin Laser

Cemlyn

Henning

Adams

et al. 2019

IEEE J. Quantum Electron.

View full text Add to dashboard Cite

The polarisation properties of a quantum well spin-vertical cavity surface emitting laser (spin-VCSEL), both without injection and with variable polarisation optical injection, are investigated experimentally and compared with the spin flip model (SFM). Without injection, we demonstrate two distinct types of VCSEL-pump response depending on the signs of the linewidth enhancement factor, birefringence and dichroism: firstly where the pump and VCSEL have the same sign of the ellipticity, and secondly where the VCSEL ellipticity, accompanied by the linear polarisation, switches sign. We show that by controlling the injected power, ellipticity or linear angle, near circular polarisation can be obtained. These responses both give insight into the electro-optical injected spin-VCSEL system, and have practical implications for the use of spin VCSELs in unique applications exploiting the ellipticity degree of freedom.

show abstract

“…For this purpose we use a standard 850 nm VCSEL [25], which is pumped with both a direct current above J th injecting spin-unpolarized carriers and a circularly polarized picosecond laser pulse exciting additional spinpolarized carriers (as an extension to purely optical spin pumping approaches, e.g. in [10,26], Fig. 1(e)).…”

mentioning

confidence: 99%

Ultrafast spin-lasers

Lindemann

Pusch

et al. 2019

Nature

175

134

View full text Add to dashboard Cite

The appeal of lasers can be attributed to both their ubiquitous applications and their role as model systems for elucidating nonequilibrium and cooperative phenomena [1]. Introducing novel concepts in lasers thus has a potential for both applied and fundamental implications [2]. Here we experimentally demonstrate that the coupling between carrier spin and light polarization in common semiconductor lasers can enable room-temperature modulation frequencies above 200 GHz, exceeding by nearly an order of magnitude the best conventional semiconductor lasers. Surprisingly, this ultrafast operation relies on a short carrier spin relaxation time and a large anisotropy of the refractive index, both commonly viewed as detrimental in spintronics [3] and conventional lasers [4]. Our results overcome the key speed limitations of conventional directly modulated lasers and offer a prospect for the next generation of low-energy ultrafast optical communication.The global internet traffic will continue its dramatic increase in the near future [5]. Short-range and energy-efficient optical communication networks provide most of the communication bandwidth to secure the digital revolution. Key devices for high-speed optical interconnects, in particular in server farms, are current-driven intensity-modulated vertical-cavity surface-emitting lasers (VCSELs) [4]. Analogous to a driven damped harmonic oscillator, modulated lasers have a resonance frequency f R for the relaxation oscillations of the light intensity [6]. For higher frequencies the response decays and reaches half of its low-frequency value at f 3dB ≈ 1 + √ 2f R , which quantifies the usable frequency range [4]. In conventional VCSELs the modulation bandwidth is limited by the dynamics of the coupled carrier-photon system and parasitic as well as thermal effects. The current record is f 3dB = 34 GHz [7]. Common approaches to enhance the bandwidth rely on the expression f R = v g aS/τ p /(2π), where v g is the group velocity, a the differential gain, S the photon density, and τ p the * markus.lindemann@rub.de † nils.gerhardt@rub.de arXiv:1807.02820v1 [cond-mat.mes-hall]

show abstract

Ultrafast spin-polarized lasing in a highly photoexcited semiconductor microcavity at room temperature

Cited by 22 publications

References 149 publications

Triple threshold lasing from a photonic trap in a Te/Se-based optical microcavity

Triple threshold lasing from a photonic trap in a Te/Se-based optical microcavity

Polarization Responses of a Solitary and Optically Injected Vertical Cavity Spin Laser

Ultrafast spin-lasers

Contact Info

Product

Resources

About