Ultrafast spin noise spectroscopy

Starosielec, Sebastian; Hägele, D.

doi:10.1063/1.2969041

Cited by 28 publications

(32 citation statements)

References 12 publications

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“…The extended measurement principle of ultrafast SNS is based upon the repeated measurement of the correlated Faraday rotation signal ðt i Þðt i þ ÁtÞ of two ultrashort laser probe pulses with a temporal delay of Át [12]. The point in time t i is arbitrary for every pulse pair due to the stochastic nature of the spin dynamics if the repetition period between two pulse pairs is much larger than the spin dephasing time.…”

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confidence: 99%

Ultrahigh Bandwidth Spin Noise Spectroscopy: Detection of Largeg-Factor Fluctuations in Highly-n-Doped GaAs

et al. 2013

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We advance all optical spin noise spectroscopy (SNS) in semiconductors to detection bandwidths of several hundred gigahertz by employing a sophisticated scheme of pulse trains from ultrafast laser oscillators as an optical probe. The ultrafast SNS technique avoids the need for optical pumping and enables nearly perturbation free measurements of extremely short spin dephasing times. We apply the technique to highly-n-doped bulk GaAs where magnetic field dependent measurements show unexpected large g-factor fluctuations. Calculations suggest that such large g-factor fluctuations do not necessarily result from extrinsic sample variations but are intrinsically present in every doped semiconductor due to the stochastic nature of the dopant distribution.

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confidence: 99%

Ultrahigh Bandwidth Spin Noise Spectroscopy: Detection of Largeg-Factor Fluctuations in Highly-n-Doped GaAs

et al. 2013

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“…This masks the intrinsic electron spin relaxation in n-doped (110) quantum wells at low temperature [388]. Recent advancement in the spin noise spectroscopy method [497,498,669] enables the probing of spin relaxation without photo-carrier excitation. The Bir-Aronov-Pikus mechanism is then removed, and the intrinsic spin lifetime can be approached.…”

Section: Quantum Wells: Experiments and Theoriesmentioning

confidence: 99%

Spin dynamics in semiconductors

2010

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This article reviews the current status of spin dynamics in semiconductors which has achieved a lot of progress in the past years due to the fast growing field of semiconductor spintronics. The primary focus is the theoretical and experimental developments of spin relaxation and dephasing in both spin precession in time domain and spin diffusion and transport in spacial domain. A fully microscopic many-body investigation on spin dynamics based on the kinetic spin Bloch equation approach is reviewed comprehensively.Comment: a review article with 193 pages and 1103 references. To be published in Physics Reports

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“…The maximal spin dephasing rates that can be resolved by this technique are limited by half of the laser repetition rate as well as the bandwidth of the detector. Starosielec and Hägele suggested ultrafast SNS, also employing pulsed laser light [42]. In their proposal, the spin-spin correlation function is not investigated by means of frequency analysis, but in a more direct fashion by varying the time delay between two subsequent probe pulses .…”

Section: Ghz Spin Noise Spectroscopymentioning

confidence: 99%

“…SNS has been transferred to semiconductor physics rather late since the shorter spin relaxation times in semiconductors compared to atoms require much more sophisticated experimental means [40]. Since the pioneering work on semiconductor SNS, a considerable number of theoretical [41,42,43] as well as experimental [40,44,45,46,47,48,49] papers have been published demonstrating SNS in three-, two-, and zero-dimensional semiconductor systems.…”

Section: Introductionmentioning

confidence: 99%

Semiconductor spin noise spectroscopy: Fundamentals, accomplishments, and challenges

Müller

Oestreich

Römer

et al. 2010

Physica E: Low-dimensional Systems and Nanostructures

125

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Semiconductor spin noise spectroscopy (SNS) has emerged as a unique experimental tool that utilizes spin fluctuations to provide profound insight into undisturbed spin dynamics in doped semiconductors and semiconductor nanostructures. The technique maps ever present stochastic spin polarization of free and localized carriers at thermal equilibrium via the Faraday effect onto the light polarization of an off-resonant probe laser and was transferred from atom optics to semiconductor physics in 2005. The inimitable advantage of spin noise spectroscopy to all other probes of semiconductor spin dynamics lies in the fact that in principle no energy has to be dissipated in the sample, i.e., SNS exclusively yields the intrinsic, undisturbed spin dynamics and promises optical non-demolition spin measurements for prospective solid state based optical spin quantum information devices. SNS is especially suitable for small electron ensembles as the relative noise increases with decreasing number of electrons. In this review, we first introduce the basic principles of SNS and the difference in spin noise of donor bound and of delocalized conduction band electrons. We continue the introduction by discussing the spectral shape of spin noise and prospects of spin noise as a quantum interface between light and matter. In the main part, we give a short overview about spin relaxation in semiconductors and summarize corresponding experiments employing SNS. Finally, we give in-depth insight into the experimental aspects and discuss possible applications of SNS.

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Ultrafast spin noise spectroscopy

Cited by 28 publications

References 12 publications

Ultrahigh Bandwidth Spin Noise Spectroscopy: Detection of Largeg-Factor Fluctuations in Highly-n-Doped GaAs

Ultrahigh Bandwidth Spin Noise Spectroscopy: Detection of Largeg-Factor Fluctuations in Highly-n-Doped GaAs

Spin dynamics in semiconductors

Semiconductor spin noise spectroscopy: Fundamentals, accomplishments, and challenges

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