Ultrafast resistive switching in SrTiO3:Nb single crystal

Zhang, X. T.; Yu, Qian; Yao, Yanjie; Li, X. G.

doi:10.1063/1.3524216

Cited by 47 publications

(16 citation statements)

References 12 publications

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“…Interfaces between oxides such as SrTiO 3 (STO) and metal electrodes have demonstrated promising resistive memory properties, both in thin film and bulk systems . Metal/oxide nanostructures display a variety of properties depending on the fabrication process or activation method used.…”

Section: Introductionmentioning

confidence: 99%

Size Dependence of Resistive Switching at Nanoscale Metal‐Oxide Interfaces

Hou

Nonnenmann

Wei

et al. 2014

Adv Funct Materials

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Size dependent variations in resistive switching using a metal-semiconducting oxide model to examine the underlying mechanisms are reported. In the range of 20 nm to 200 nm, Au nanoparticle/SrTiO 3 interface transport properties are size dependent. The size dependence is attributed to the combination of geometric scaling and size-dependent Schottky properties. After electroforming, the observed "eight-wise" bipolar resistive hysteresis loop is modulated by trap/detrap process. The size-dependent high resistance state is consistent with changes in both the interfacial area and Schottky properties. The low resistance state exhibits size independent resistance through the dominant fast conductive path. Detrapping requires more work for smaller interfaces due to the associated larger built-in electric fi eld.

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Section: Introductionmentioning

confidence: 99%

Size Dependence of Resistive Switching at Nanoscale Metal‐Oxide Interfaces

Hou

Nonnenmann

Wei

et al. 2014

Adv Funct Materials

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“…Here, pentavalent Nb is used as a donor for SrTiO 3 substituting the tetravalent Ti. Although after this doping the crystal should be metallic at low carrier concentrations [5,6], surprisingly, resistive switching can be observed in Nb-doped SrTiO 3 thin films [7] and even in single crystals [8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26], although the nature of the switching process is still under discussion (for details see supplement). Furthermore, a highly resistive surface layer, which arises as soon as the crystal comes into contact with oxygen, was detected on SrTiO 3 :Nb influencing the properties of the whole sample [27,28].…”

Section: Introductionmentioning

confidence: 99%

Cluster-like resistive switching of SrTiO₃:Nb surface layers

et al. 2013

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The understanding of the resistive switching mechanisms in perovskites is of particular importance for the development of novel non-volatile memories. Nanoscale investigations recently revealed that in the model material SrTiO 3 a filamentary type of switching is present. In this paper, we show that upon donor doping with Nb the switching type changes fundamentally. We report on the observation of conducting clusters that can be switched independently between a high resistance and a low resistance state when applying a voltage. Furthermore, we show that the resistive switching takes place in a semiconducting surface layer on top of the metallic bulk of SrTiO 3 :Nb single crystals, which can change its properties easily under external gradients.

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“…Junctions miniaturization 31 and doping optimization might be further exploited to develop highly sensitive gas sensors operating at room-temperature by ultrafast switching of metal/Nb:STO Schottky contacts. 32 We acknowledge support by the Italian MIUR through the FIRB Project RBAP115AYN "Oxides at the nanoscale: Multifunctionality and applications" and the PRIN 2008 "2DEG-FOXI," by EU through the FP7 project OXIDES and by Fondazione CARIGE. Manuele Gargano and CNR-PSC are gratefully acknowledged for technical support.…”

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confidence: 99%

Modulation of resistance switching in Au/Nb:SrTiO3 Schottky junctions by ambient oxygen

Buzio

Gerbi

Gadaleta

et al. 2012

Applied Physics Letters

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We investigated the room-temperature current-voltage characteristics of Au/Nb:SrTiO3 Schottky junctions under various atmospheres and working pressures. We observed that oxygen partial pressure reversibly modulates junction response, briefly individual specimens behave as high-quality rectifiers in oxygen-rich atmospheres and as bipolar resistive switches in vacuum and inert gases. A two orders of magnitude modulation of resistance switching characterizes samples with the highest content of interfacial oxygen vacancies. We attribute this behavior to oxygen ionosorption and chemical oxidation at the metal-oxide interface. Our results are relevant to oxide devices displaying resistive switching at ambient-exposed interfaces, and might be exploited for gas detection purpose

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Ultrafast resistive switching in SrTiO3:Nb single crystal

Cited by 47 publications

References 12 publications

Size Dependence of Resistive Switching at Nanoscale Metal‐Oxide Interfaces

Size Dependence of Resistive Switching at Nanoscale Metal‐Oxide Interfaces

Cluster-like resistive switching of SrTiO₃:Nb surface layers

Modulation of resistance switching in Au/Nb:SrTiO3 Schottky junctions by ambient oxygen

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Ultrafast resistive switching in SrTiO3:Nb single crystal

Cited by 47 publications

References 12 publications

Size Dependence of Resistive Switching at Nanoscale Metal‐Oxide Interfaces

Size Dependence of Resistive Switching at Nanoscale Metal‐Oxide Interfaces

Cluster-like resistive switching of SrTiO3:Nb surface layers

Modulation of resistance switching in Au/Nb:SrTiO3 Schottky junctions by ambient oxygen

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Cluster-like resistive switching of SrTiO₃:Nb surface layers