Ultrafast reflectivity changes in photoexcited GaAs Schottky diodes

Fischler, W.; Buchberger, P.; Höpfel, R. A.; Zandler, G.

doi:10.1063/1.116604

Cited by 22 publications

(8 citation statements)

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“…The two non-pronounced periods of plasma oscillations were observed in the p-i-n structure from electro-absorption measurements [15] and in n-GaAs from time-resolved measurements of THz radiation [16]. Similar results were obtained from reflectivity measurements in GaAs Schottky diodes [17].…”

Section: Introductionsupporting

confidence: 74%

Oscillations of electron–hole plasma in terahertz emitters

Reklaitis¹

2016

Lith. J. Phys.

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Oscillations of photogenerated electron-hole plasma in freestanding terahertz emitters are studied using the hydrodynamic analysis and Monte Carlo simulations. The pronounced plasma oscillations are obtained in an n-GaAs emitter in which the oscillations are initiated by the surface electric field. The plasma oscillations are also found in an n-InAs emitter in which the oscillations are induced by the photo-Dember effect.

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Section: Introductionsupporting

confidence: 74%

Oscillations of electron–hole plasma in terahertz emitters

Reklaitis¹

2016

Lith. J. Phys.

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“…With laser pulses shorter than 20 fs, coherent carrier dynamics such as coherent oscillations [1][2][3][4][5] and ultrafast high-field charge carrier transport processes [6][7][8] have become a matter of growing interest. The investigations of ultrahigh temporal resolution transport of photogenerated carriers have focused primarily on charge dynamics using tetrahertz ͑THz͒ emission spectroscopy from either GaAs and InP p -i -n diodes 6 or GaAs and Si Schottky diodes.…”

mentioning

confidence: 99%

Femtosecond carrier dynamics in an asymmetrically excited GaAs photoconductive switch

Cummings

Holzman

Elezzabi

2001

Applied Physics Letters

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We present a detailed analysis of the field screening and carrier dynamics which exist in the high-field region of an asymmetrically excited coplanar transmission line. Through time-resolved reflectivity measurements, it is found that the ballistic acceleration of carriers, and subsequent field screening, dominate the ultrashort electrical pulse generation. In addition, the formation of an instantaneous macroscopic polarization and the creation of coherently coupled plasmon–phonon modes are found to effect the electric field screening response. The results are in agreement with the field screening picture of edge-illuminated photoconduction and suggest that pulses as short as 110 fs can be generated.

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“…This result excludes the impulsive Raman scattering as the possible driving mechanism. 19,24,25 We therefore conclude that transient depletion field screening is the main driving mechanism of these coherent LO phonons. This screening process is not possible unless the ballistic transport of photoexcited nonequilibrium electrons from the metal layer into the GaAsP region is taken into account.…”

Section: Coherent Phonon Spectroscopy Of the Gaasp/au Interfacementioning

confidence: 92%

“…1(c) indicates two coherent phonon peaks, which are assigned to the LO GaAs-like (8.5 THz) and LO GaP-like (11.5 THz) phonons of GaAsP. 30 The driving mechanism of the coherent LO phonons observed in GaAsP/Au sample is tentatively assigned to the transient depletion field screening in the GaAsP/Au hetero-interface, where the photoexcited nonequilibrium electrons in the metal layer can ballistically transport into the GaAsP region 19 and proceed the depletion field screening. This driving mechanism is deduced based on the following experimental results.…”

Section: Coherent Phonon Spectroscopy Of the Gaasp/au Interfacementioning

confidence: 98%

Coherent phonon spectroscopy of semiconductor-metal interfaces

Chang

2004

Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII

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Coherent phonons of semiconductor-metal interfaces are impulsively generated and detected with time-resolved second-harmonic generation. Coherent longitudinal optical phonons are launched in the near surface depletion regions of GaP/Au and GaAsP/Au Schottky photodiodes. Photoexcited electrons ballistically transport from the metal layer into the semiconductor region rapidly screen the near surface depletion field and launches these coherent LO phonons. The dephasing of these coherent LO phonons is mainly due to the anharmonic decay at zero or reverse bias. Their dephasing times decrease significantly as a forward bias is applied to the heterointerface. This effect is attributed to the strong carrier-phonon scatterings induced by the electrical driven electrons flowing across the heterointerface. Meanwhile, coherent longitudinal acoustic wave packet is observed in the GaP/Au heterointerface via transient thermal absorption in the gold thin layer. This acoustic wave packet propagates into the GaP bulk with the sound velocity ~5.8×10 5 cm/sec of GaP LA phonon.

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Ultrafast reflectivity changes in photoexcited GaAs Schottky diodes

Cited by 22 publications

References 1 publication

Oscillations of electron–hole plasma in terahertz emitters

Oscillations of electron–hole plasma in terahertz emitters

Femtosecond carrier dynamics in an asymmetrically excited GaAs photoconductive switch

Coherent phonon spectroscopy of semiconductor-metal interfaces

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