Ultrafast polarization-dependent all-optical switching of germanium-based metaphotonic devices

Sun, Hao; Hu, Yuze; Tang, Yuhua; You, Jinhong; Zhou, Junhu; Liu, Hengzhu; Zheng, Xin

doi:10.1364/prj.380446

Cited by 27 publications

(15 citation statements)

References 76 publications

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“…Considering that no natural material would interact with electromagnetic field in this region, metamaterials, periodically arranged metal structures, are introduced and employed to control the transmission of THz waves [13][14][15][16][17][18][19][20][21][22][23][24][25][26] . Therefore, if the classical analogue of EIT, that is, plasmon-induced transparency (PIT), can be controlled using metamaterials, the exotic properties of the EIT effect, like reduced group velocity and strong dispersion, can be utilized for applications including slow light devices [27] , biochemical sensors [28] , and optical buffers [29][30][31] . In previous works, the PIT effect in metamaterials is frequently achieved by utilizing destructive interference between bright modes and dark modes [32] .…”

Section: Introductionmentioning

confidence: 99%

Ultrafast all-optical switching of dual-band plasmon-induced transparency in terahertz metamaterials

et al. 2022

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An active ultrafast formation and modulation of dual-band plasmon-induced transparency (PIT) effect is theoretically and experimentally studied in a novel metaphotonic device operating in the terahertz regime, for the first time, to the best of our knowledge. Specifically, we designed and fabricated a triatomic metamaterial hybridized with silicon islands following a newly proposed modulating mechanism. In this mechanism, a localized surface plasmon resonance is induced by the broken symmetry of a C 2 structure, acting as the quasi-dark mode. Excited by exterior laser pumps, the photo-induced carriers in silicon promote the quasi-dark mode, which shields the near-field coupling between the dark mode and bright mode supported by the triatomic metamaterial, leading to the dynamical modulation of terahertz waves from individual-band into dual-band PIT effects, with a decay constant of 493 ps. Moreover, a remarkable slow light effect occurs in the modulating process, accompanied by the dual-transparent windows. The dynamical switching technique of the dual-band PIT effect introduced in this work highlights the potential usefulness of this metaphotonic device in optical information processing and communication, including multi-frequency filtering, tunable sensors, and optical storage.

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Section: Introductionmentioning

confidence: 99%

Ultrafast all-optical switching of dual-band plasmon-induced transparency in terahertz metamaterials

et al. 2022

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“…The impurity band detector as a typical extrinsic photoconductive THz detector is widely studied for its high sensitivity, wide spectrum, and fast response, which realizes detection by constructing an impurity band in a semiconductor energy gap and causing electrons to transition between the impurity band and the conduction band or valence band [4][5][6]. The Ge-based impurity detector is a promising candidate, in that the available impurity band in Ge is shallow enough to just absorb THz radiation (e.g., P in Ge at 0.013 eV and Ga in Ge at 0.014 eV) [7][8][9][10]. It has been developed widely with a cutoff wavelength of nearly 200 µm, and it has already been used in astronomical observations such as the ASTRO-F project and the Spitzer Space Telescope [11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Optimization of Pixel Size and Electrode Structure for Ge:Ga Terahertz Photoconductive Detectors

Wu¹,

Dong²,

Chen³

et al. 2022

Sensors

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To investigate the effects of the pixel sizes and the electrode structures on the performance of Ge-based terahertz (THz) photoconductive detectors, vertical structure Ge:Ga detectors with different structure parameters were fabricated. The characteristics of the detectors were investigated at 4.2 K, including the spectral response, blackbody response (Rbb), dark current density-voltage characters, and noise equivalent power (NEP). The detector with the pixel radius of 400 μm and the top electrode of the ring structure showed the best performance. The spectral response band of this detector was about 20–180 μm. The Rbb of this detector reached as high as 0.92 A/W, and the NEP reached 5.4 × 10−13 W/Hz at 0.5 V. Compared with the detector with a pixel radius of 1000 μm and the top electrode of the spot structure, the Rbb increased nearly six times, and the NEP decreased nearly 12 times. This is due to the fact that the optimized parameters increased the equivalent electric field of the detector. This work provides a route for future research into large-scale array Ge-based THz detectors.

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“…Among these conductors, semiconductors can provide carrier injection to shunt the capacity in metamaterials, controlled by external stimuli. One salient and significant modulating approach is the all-optical modulation of the PIT effect in a picosecond time scale, which is highly desired to novel ultrafast devices [35][36][37][38][39][40] . To date, all-optical modulation of metamaterials and semiconductors has been established as a hot topic worthy of numerous scholar attentions [41,42] .…”

Section: Introductionmentioning

confidence: 99%

Process-controllable modulation of plasmon-induced transparency in terahertz metamaterials

et al. 2021

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Recently reported plasmon-induced transparency (PIT) in metamaterials endows the optical structures in classical systems with quantum optical effects. In particular, the nonreconfigurable nature in metamaterials makes multifunctional applications of PIT effects in terahertz communications and optical networks remain a great challenge. Here, we present an ultrafast process-selectable modulation of the PIT effect. By incorporating silicon islands into diatomic metamaterials, the PIT effect is modulated reversely, depending on the vertical and horizontal configurations, with giant modulation depths as high as 129% and 109%. Accompanied by the enormous switching of the transparent window, remarkable slow light effect occurs.

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Ultrafast polarization-dependent all-optical switching of germanium-based metaphotonic devices

Cited by 27 publications

References 76 publications

Ultrafast all-optical switching of dual-band plasmon-induced transparency in terahertz metamaterials

Ultrafast all-optical switching of dual-band plasmon-induced transparency in terahertz metamaterials

Optimization of Pixel Size and Electrode Structure for Ge:Ga Terahertz Photoconductive Detectors

Process-controllable modulation of plasmon-induced transparency in terahertz metamaterials

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