Ultrafast metal-semiconductor-metal photodiodes fabricated on low-temperature GaAs

Klingenstein, M.; Kühl, J.; Nötzel, R.; Ploog, K.; Rosenzweig, J.; Moglestue, C.; Hulsmann, A.; Schneider, J.; Köhler, K.

doi:10.1063/1.106574

Cited by 43 publications

(15 citation statements)

References 9 publications

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“…Near the anode, in the low field region electron-hole plasma is formed, this region contains more holes than electrons, where they move at much lower velocities [6,10,12,13,14]. When substrate is deeper, these carriers are collected at much lower speeds [11], it explained as follows: inside the space-charge region, a strong field accelerates electrons towards the bulk just beyond this region, a retarding filed sweeps the electrons toward the surface [15], this leads to increase fall time.…”

Section: Resultsmentioning

confidence: 99%

Microwave Optical Switches Metal–Semiconductor–Metal Schottky based on GaAs

Benzeghda¹,

Hobar²,

Decoster³

et al. 2014

REPQJ

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Abstract. Interdigitated metal-semiconductor-metal (MSM) photodetectors have received considerable attention for applications in microwave optical phoswitches. The impulse response of interdigitated metal-semiconductor-metal photoswich fabricated on GaAs non-intentional doped (NID) absorbing layer is investigated. The photodetector MSM is introduced in the microwave lines have active surfaces of 3x3 µm2 and electrode spacing of 0.2, 0.3, 0.5 and 1 µm.. The photocurrent response was measured after excitation and we found that the screening of the dark electric field and charge accumulation exceedingly modify the drift conditions of the photogenerated electrons and holes in active region of the MSM photoswich.

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Section: Resultsmentioning

confidence: 99%

Microwave Optical Switches Metal–Semiconductor–Metal Schottky based on GaAs

Benzeghda¹,

Hobar²,

Decoster³

et al. 2014

REPQJ

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“…The slowly decaying signal might again arise from a limited number of trap states at the metal-semiconductor contact. 19 This signal is present in all generated voltage pulses but only leads to a prominent and visible contribution at very small pump pulse energies.…”

Section: Simultaneous Generation and Detection Of Ultrashort Voltage mentioning

confidence: 96%

“…For very small bias fields a tail in the voltage pulse shape evolves. The tail might be an indication of trap states at the metalsemiconductor contact 19 that have a low potential barrier and, thus, are only occupied at small electric fields. In the inset of Fig.…”

Section: Simultaneous Generation and Detection Of Ultrashort Voltage mentioning

confidence: 99%

Simultaneous generation and detection of ultrashort voltage pulses in low-temperature grown GaAs with below-bandgap laser pulses

Bieler

Pierz

Siegner

2009

Applied Physics Letters

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We present a method that allows for the simultaneous generation and detection of ultrashort voltage pulses, which propagate on a planar transmission line, in the same material with laser pulses of the same wavelength. The generation is accomplished by exciting band-tail states below the fundamental bandgap of a low-temperature grown GaAs layer, while the detection takes advantage of the electro-optic effect in the GaAs material. This simple scheme considerably enhances previous measurement techniques and is capable of generating and measuring frequencies exceeding 1 THz. The optimum wavelength for the combined generation and detection technique is found at ∼900 nm.

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“…Additional applications of ultrafast photodetectors include THz beam systems [3] and fast sampling oscilloscopes [4]. Use of annealed, low temperature grown LT-GaAs as the semiconducting material has been found to give significant improvements in performance [5][6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

One- and two-dimensional models of the transient response of metal - semiconductor - metal photodetectors including diffraction

Wilson

Walker

1997

Semicond. Sci. Technol.

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The response of metal-semiconductor-metal photodetectors to pulsed illumination was simulated for GaAs and low temperature grown LT-GaAs detectors, using a drift-diffusion model in one and two spatial dimensions. We found that the response predicted by the one-dimensional model could be made to agree closely with that of the two-dimensional model by using a single adjustable parameter representing the distance a carrier must travel in a nonilluminated region. In the two-dimensional model, diffraction of the light around the contacts has been shown to be important for a contact separation of one micron and to reduce the photocurrent significantly. LT-GaAs was modelled with the same two-dimensional model as for GaAs, but with a recombination lifetime of 5 ps and lower carrier mobilities. Our results show that the photocurrent decreases to zero in 40 ps, whereas in bulk GaAs, with a recombination lifetime of 1 ns, there is a long lived tail in the photocurrent after 100 ps. Diffraction was shown to have similar effects for LT-GaAs as for GaAs.

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Ultrafast metal-semiconductor-metal photodiodes fabricated on low-temperature GaAs

Cited by 43 publications

References 9 publications

Microwave Optical Switches Metal–Semiconductor–Metal Schottky based on GaAs

Microwave Optical Switches Metal–Semiconductor–Metal Schottky based on GaAs

Simultaneous generation and detection of ultrashort voltage pulses in low-temperature grown GaAs with below-bandgap laser pulses

One- and two-dimensional models of the transient response of metal - semiconductor - metal photodetectors including diffraction

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