Ultrafast Laser Processing of Diamond Materials: A Review

Apostolova, Tzveta; Kurylo, V.A.; Gnilitskyi, Iaroslav

doi:10.3389/fphy.2021.650280

Cited by 8 publications

(1 citation statement)

References 206 publications

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“…Naturally, diamonds occur more than 1 billion years inside the earth crust at 150−250 km in depth. However, it is possible to create identical conditions in the laboratory to grow diamonds by various deposition techniques such as hot filament chemical vapor deposition (HFCVD), 21 microwave plasma chemical vapor deposition (MPCVD), 22 pulsed laser annealing (PLA), 23 etc. Until now, heteroepitaxial growth of micro-and nano-crystallites flat diamond on silicon substrates is the widely investigated area owing to its prospect as a heat spreader in power electronic devices, scalability, and cost.…”

Section: ■ Introductionmentioning

confidence: 99%

Tubular Diamond as an Efficient Electron Field Emitter

Karmakar

Sarkar

Mistari

et al. 2023

ACS Appl. Electron. Mater.

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Herein, we present a straightforward and cost-effective procedure for producing conductive diamond tubes on the surface of porous carbon nanotube hollow fibers using successive 10-pulsed laser annealing shots and 6 h of hot filament chemical vapor deposition techniques. Room-temperature Raman and X-ray diffraction spectra reveal the signature T2g peaks near 1332.4 cm–1 and 111 planes of diamonds near 43.9°, respectively. A low turn-on field (E TO) ∼1.85 V/μm@1 μA/cm2 and a threshold field (E TH) ∼2.54 V/μm@10 μA/cm2 were observed for the tubular diamond structures. The field enhancement factor (β) was calculated at 3594 and highly stable field emission current stability was observed over a long period of 4 h. For the first time, a good insight into the field emission results of the diamond is established with the structural, electronic properties, and the work function (φ) ∼4.84 eV analysis conducted by the density functional theory simulation. Finite electronic states at the Fermi level are observed beyond a band gap, and it demonstrates the wide-band gap (4.4 eV) semiconducting nature of the diamond. The Bader charge analysis and maximum entropy method pattern revealed the negative electron affinity of the diamond, and it is responsible for the emission of electrons from the conduction band of the diamond. Besides, the accumulation of charge carriers, which contributes to the electric field emission, takes place due to the weak π bonds of carbon atoms. The low turn-on field, the high field enhancement factor, and the good field emission current stability of tubular diamond offer great prospects for future efficient and low-cost field emission devices.

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Section: ■ Introductionmentioning

confidence: 99%

Tubular Diamond as an Efficient Electron Field Emitter

Karmakar

Sarkar

Mistari

et al. 2023

ACS Appl. Electron. Mater.

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High aspect ratio diamond nanosecond laser machining

et al. 2023

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Laser processing of diamond has become an important technique for fabricating next generation microelectronic and quantum devices. However, the realization of low taper, high aspect ratio structures in diamond remains a challenge. We demonstrate the effects of pulse energy, pulse number and irradiation profile on the achievable aspect ratio with 532 nm nanosecond laser machining. Strong and gentle ablation regimes were observed using percussion hole drilling of type Ib HPHT diamond. Under percussion hole drilling a maximum aspect ratio of 22:1 was achieved with 10,000 pulses. To reach aspect ratios on average 40:1 and up to 66:1, rotary assisted drilling was employed using > 2 M pulse accumulations. We additionally demonstrate methods of obtaining 0.1° taper angles via ramped pulse energy machining in 10:1 aspect ratio tubes. Finally, effects of laser induced damage are studied using confocal Raman spectroscopy with observation of up to 36% increase in tensile strain following strong laser irradiation. However, we report that upon application of 600 °C heat treatment, induced strain is reduced by up to ~ 50% with considerable homogenization of observed strain.

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