Ultrafast Kerr rotations and zero-field dephasing time of electron spins in InAs/GaAs quantum disks

Ning, Jiqiang; Xu, Shijie; Wei, Zezhu; Ruan, Xuezhong; Ji, Yang; Zheng, Hang; Liu, H.C.

doi:10.1016/j.physleta.2010.09.073

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References 16 publications

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“…These additional structures are caused by the multiple meetings of the probe light with the pump light, due to their reflections within the geometric structure of the measured sample. 12 In this paper, we would like to concentrate on the TRKR data in the positive delay time region. A remarkable difference between the two TRKR lines shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Electronic band structures and electron spins of InAs/GaAs quantum dots induced by wetting-layer fluctuation

Ning¹,

Xu²,

Ruan³

et al. 2011

Journal of Applied Physics

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Electronic band structures and spin states of the InAs/GaAs quantum dots (QDs) induced by the wetting-layer fluctuation were investigated by employing the technique of time-resolved Kerr rotation (TRKR) with and without magnetic field. Sign change of the Kerr rotation signal was unambiguously observed when only the wavelength of the pump/probe light was scanned. By carefully examining the dependence of TRKR signal on the excitation wavelength and magnetic field as well as photoluminescence and reflectance spectra, the physical origin causing the sign change of the Kerr signal is uncovered. It is due to the resonant excitations of electrons with opposite spin orientations at heavy-(hh) and light-hole (lh) subbands, respectively, since there is a large enough energy separation in QDs for the excitation laser pulses. This measurement also leads to a precise determination of the energy separation between the hh and lh subbands near k ¼ 0 point in the dots.

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Section: Resultsmentioning

confidence: 99%