Ultrafast InP optical integrated circuits

Bente, Eajm Erwin; Smit, MK Meint

doi:10.1117/12.660399

Cited by 18 publications

(11 citation statements)

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“…In a particular technology platform the composition of the layer stack is a given but a large degree of freedom in the design of the laser circuit is available to meet the application requirements. In this paper results are presented that have been obtained by the authors utilizing the standardized integration platforms on InP developed at our institute 9,3 that is now used and developed further by Smart Photonics B.V. and accessible through the JePPIX brokering organization 10 . The platform is based on InP substrate with InP/InGaAsP ridge waveguides.…”

Section: Use Of Active-passive Integration For Mllmentioning

confidence: 99%

Mode-locked lasers in InP photonic integrated circuits

et al. 2017

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Document VersionAuthor's version before peer-review Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. ABSTRACTIn this paper an overview is presented of results obtained with mode-locked semiconductor laser systems that are monolithically integrated using a standardized photonic integration platform based on InP. The laser systems are operating around 1550nm. In this technology platform the basic components that form the laser circuits such as amplifiers, passive waveguides and filters, as well as the semiconductor processing are standardized. Several of the possibilities that such a standardized technology offer are demonstrated by a number of examples of realized devices such as low repetition rate mode-locked lasers, a stabilized comb system and a wide frequency comb source.

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Section: Use Of Active-passive Integration For Mllmentioning

confidence: 99%

Mode-locked lasers in InP photonic integrated circuits

et al. 2017

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“…Second, the filters can in principle be tuned within a nanosecond due to the fast electro-optical response in the reversely biased PHMs [20]. The third reason is that these filters can be fabricated within the active/passive integration technology of COBRA [21], [22], and integrated laser systems in the required wavelength range can be realized.…”

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confidence: 99%

InP-Based Monolithically Integrated Tunable Wavelength Filters in the 1.6–1.8 <formula formulatype="inline"><tex Notation="TeX">$\mu$</tex> </formula>m Wavelength Region for Tunable Laser Purposes

Tilma

Jiao

Veldhoven

et al. 2011

J. Lightwave Technol.

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2011). InP-based monolithically integrated tunable wavelength filters in the 1.6-1.8 m wavelength region for tunable laser purposes.Abstract-In this paper, we present the design, fabrication, and characterization of two monolithically InP-based integrated electro-optically tunable filters. The combination of these filters can be used to achieve a filter with a narrow passband and a large free spectral range. These filters are designed to be used in an integrated tunable laser source in the 1600-1800 nm wavelength region using active-passive integration technology. The fact that these filters worked successfully shows that this integration technology, originally designed to be used around 1550 nm wavelength, can also be used successfully in the 1600-1800 nm wavelength region without a large penalty in performance. The two filters, a high-resolution arrayed waveguide grating-type filters and a low-resolution multimode interferometer-tree-type filter are made tunable using 5 mm long electro-optic phase modulators in the arms of the waveguide arrays. Measurements show that these filters can be tuned over a wavelength range of more than 100 nm with an accuracy of 0.1 nm (1% of the free spectral range) for the high-resolution filter and an accuracy of 9 nm (4% of the free spectral range) for the low-resolution filter.

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“…We thus present, a photonic integrated circuit that performs parallel per-wavelength digital logic operations required in a SAC label swapping node. The circuit is monolithically integrated in Indium Phosphide (InP) technology [10], using a multiple purpose generic integration scheme [11], hence compatible with state of the art commercial components for optical communications. The circuit operation speed is two orders of magnitude higher than in [12], with a footprint five orders of magnitude smaller, than the previously reported equivalent subsystems [8].…”

Section: Introductionmentioning

confidence: 99%

Label swapper device for spectral amplitude coded optical packet networks monolithically integrated on InP

Muñoz¹,

Garcia-Olcina²,

Habib³

et al. 2011

Opt. Express

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Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers)Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication Citation for published version (APA):Muñoz, P., García-Olcina, R., Habib, C., Chen, L. R., Leijtens, X. J. M., Vries, de, T., ... Capmany, J. (2011). Label swapper device for spectral amplitude coded optical packet networks monolithically integrated on InP. Optics Express, 19(14), 13540-13550. DOI: 10.1364/OE.19.013540 General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. Abstract:In this paper the design, fabrication and experimental characterization of an spectral amplitude coded (SAC) optical label swapper monolithically integrated on Indium Phosphide (InP) is presented. The device has a footprint of 4.8x1.5 mm 2 and is able to perform label swapping operations required in SAC at a speed of 155 Mbps. The device was manufactured in InP using a multiple purpose generic integration scheme. Compared to previous SAC label swapper demonstrations, using discrete component assembly, this label swapper chip operates two order of magnitudes faster.

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Ultrafast InP optical integrated circuits

Cited by 18 publications

References 20 publications

Mode-locked lasers in InP photonic integrated circuits

Mode-locked lasers in InP photonic integrated circuits

InP-Based Monolithically Integrated Tunable Wavelength Filters in the 1.6–1.8 <formula formulatype="inline"><tex Notation="TeX">$\mu$</tex> </formula>m Wavelength Region for Tunable Laser Purposes

Label swapper device for spectral amplitude coded optical packet networks monolithically integrated on InP

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Ultrafast InP optical integrated circuits

Cited by 18 publications

References 20 publications

Mode-locked lasers in InP photonic integrated circuits

Mode-locked lasers in InP photonic integrated circuits

InP-Based Monolithically Integrated Tunable Wavelength Filters in the 1.6&#x2013;1.8 <formula formulatype="inline"><tex Notation="TeX">$\mu$</tex> </formula>m Wavelength Region for Tunable Laser Purposes

Label swapper device for spectral amplitude coded optical packet networks monolithically integrated on InP

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InP-Based Monolithically Integrated Tunable Wavelength Filters in the 1.6–1.8 <formula formulatype="inline"><tex Notation="TeX">$\mu$</tex> </formula>m Wavelength Region for Tunable Laser Purposes