Ultrafast hole spin qubit with gate-tunable spin–orbit switch functionality

Froning, Florian; Camenzind, Leon C.; Molen, Orson A. H. van der; Li, Ang; Bakkers, Erik P. A. M.; Zumbühl, Dominik M.; Braakman, Floris

doi:10.1038/s41565-020-00828-6

Cited by 147 publications

(178 citation statements)

References 47 publications

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“…Ultrafast control of hole spins has also been achieved in a Ge/Si core/shell nanowire 41 , though that hole system is quite different from ours. The key difference stems from the respective geometries.…”

Section: Discussionmentioning

confidence: 56%

“…To date, several works on hole spin qubits have been reported in a multitude of systems, such as Si metal-oxide-semiconductor (MOS) 37 , undoped strained Ge quantum well 38 , 39 and GHW 40 structures, with Rabi frequencies in the range of 70–140 MHz. A recent experiment in Ge/Si core/shell nanowire has reached a very fast Rabi frequency of 435 MHz, with a short spin-orbit length of 3 nm 41 .…”

Section: Introductionmentioning

confidence: 99%

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Ultrafast coherent control of a hole spin qubit in a germanium quantum dot

Wang

Gao

et al. 2022

Nat Commun

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Operation speed and coherence time are two core measures for the viability of a qubit. Strong spin-orbit interaction (SOI) and relatively weak hyperfine interaction make holes in germanium (Ge) intriguing candidates for spin qubits with rapid, all-electrical coherent control. Here we report ultrafast single-spin manipulation in a hole-based double quantum dot in a germanium hut wire (GHW). Mediated by the strong SOI, a Rabi frequency exceeding 540 MHz is observed at a magnetic field of 100 mT, setting a record for ultrafast spin qubit control in semiconductor systems. We demonstrate that the strong SOI of heavy holes (HHs) in our GHW, characterized by a very short spin-orbit length of 1.5 nm, enables the rapid gate operations we accomplish. Our results demonstrate the potential of ultrafast coherent control of hole spin qubits to meet the requirement of DiVincenzo’s criteria for a scalable quantum information processor.

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Section: Discussionmentioning

confidence: 56%

Section: Introductionmentioning

confidence: 99%

Ultrafast coherent control of a hole spin qubit in a germanium quantum dot

Wang

Gao

et al. 2022

Nat Commun

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show abstract

“…[ 21–28 ] Besides the electron system, a hole spin qubit in silicon or germanium is also under intensive study recently due to high mobility, suppressed coupling to nuclear noise, fast EDSR, and ease of fabrication. [ 28,107–134 ]…”

Section: Introductionmentioning

confidence: 99%

Dephasing of Exchange‐Coupled Spins in Quantum Dots for Quantum Computing

Huang

2021

Adv Quantum Tech

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A spin qubit in semiconductor quantum dots holds promise for quantum information processing for scalability and long coherence time. An important semiconductor qubit system is a double quantum dot trapping two electrons or holes, whose spin states encode either a singlet–triplet qubit or two single‐spin qubits coupled by exchange interaction. In this article, progress on the spin dephasing of two exchange‐coupled spins in a double quantum dot is reported. First, the schemes of two‐qubit gates and qubit encodings in gate‐defined quantum dots or donor atoms based on the exchange interaction are discussed. Then, the progress on spin dephasing of a singlet–triplet qubit or a two‐qubit gate is reported. The methods of suppressing spin dephasing are further discussed. The understanding of the spin dephasing may provide insights into the realization of high‐fidelity quantum gates for spin‐based quantum computing.

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“…Si and Ge nanowires (NWs) have potential applications for high-performance transistors [1,2] and for disruptively quantum computation technology [3][4][5][6]. The controllable growth of NW arrays in wafer-scale remains the major challenge for large scale integration.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)

Wang

Zhang

2021

Nanomaterials

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Controllable growth of wafer-scale in-plane nanowires (NWs) is a prerequisite for achieving addressable and scalable NW-based quantum devices. Here, by introducing molecular beam epitaxy on patterned Si structures, we demonstrate the wafer-scale epitaxial growth of site-controlled in-plane Si, SiGe, and Ge/Si core/shell NW arrays on Si (001) substrate. The epitaxially grown Si, SiGe, and Ge/Si core/shell NW are highly homogeneous with well-defined facets. Suspended Si NWs with four {111} facets and a side width of about 25 nm are observed. Characterizations including high resolution transmission electron microscopy (HRTEM) confirm the high quality of these epitaxial NWs.

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Ultrafast hole spin qubit with gate-tunable spin–orbit switch functionality

Cited by 147 publications

References 47 publications

Ultrafast coherent control of a hole spin qubit in a germanium quantum dot

Ultrafast coherent control of a hole spin qubit in a germanium quantum dot

Dephasing of Exchange‐Coupled Spins in Quantum Dots for Quantum Computing

Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)

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