Ultrafast growth of InGaP solar cells via hydride vapor phase epitaxy

Yoshida, Shoji; Oshima, Ryuji; Makita, Kikuo; Ubukata, Akinori; Sugaya, Takeyoshi

doi:10.7567/1882-0786/ab0aa5

Cited by 16 publications

(16 citation statements)

References 29 publications

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“…The conversion efficiency increased by about three points compared to our previous work. 31 In this work, the thickness of t 2 affected the EQE values. Figure 6B shows the EQE spectra of the InGaP cell with t 2 = 100 and t 2 = 0 nm; the improvement in the EQE value for thinner layers was clearly observed.…”

Section: Bertness Et Al Reported That the Electrical Activity Of Si In Alinpmentioning

confidence: 76%

InGaP/GaAs dual‐junction solar cells with AlInGaP passivation layer grown by hydride vapor phase epitaxy

Yoshida

Oshima

Makita

et al. 2021

Progress in Photovoltaics

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Hydride vapor phase epitaxy (HVPE), which enables low-cost crystal growth, has garnered attention as an alternative III-V device fabrication technology to metal organic chemical vapor deposition. However, improvement in solar cell performance, through the introduction of Al-containing materials grown by HVPE, has not been reported because of the complexity of their growth. This paper presents the solar cell applications of AlInGaP grown via HVPE using aluminum trichloride (AlCl 3 ) as a precursor. Increasing the partial pressure of AlCl 3 increased the Al composition in the AlInGaP layers. Although high concentrations of Si and O impurities were detected within the HVPE-grown AlInGaP layers, the crystals were found to be of a quality that could be used in III-V solar cells. By using AlInGaP as a passivation layer in InGaP single-junction solar cells, the current density was improved because of a reduction in the surface recombination loss. A conversion efficiency of 15.4% was achieved for the InGaP single-junction solar cells measured under airmass 1.5 global solar spectrum illumination. Moreover, we developed 26.9% efficient InGaP/GaAs dual-junction solar cells, the highest conversion efficiency in reported cells grown via HVPE. This result demonstrates an improvement in the performance of HVPE cells by introducing Al-containing materials.

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Section: Bertness Et Al Reported That the Electrical Activity Of Si In Alinpmentioning

confidence: 76%

InGaP/GaAs dual‐junction solar cells with AlInGaP passivation layer grown by hydride vapor phase epitaxy

Yoshida

Oshima

Makita

et al. 2021

Progress in Photovoltaics

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“…The device ELO and substrate reuse techniques are gaining attention for reducing GaAs processing costs. In addition, there have been rapid developments in hydride vapor‐phase epitaxy (H‐VPE), a new fabrication method for GaAs cells 64–67 . H‐VPE involves lower costs when compared with the metal organic chemical vapor deposition technique (MO‐CVD).…”

Section: Discussionmentioning

confidence: 99%

III‐V//Cu_xIn_1−yGa_ySe₂ multijunction solar cells with 27.2% efficiency fabricated using modified smart stack technology with Pd nanoparticle array and adhesive material

Makita

Kamikawa

Mizuno

et al. 2021

Progress in Photovoltaics

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Multijunction (MJ) solar cells achieve high efficiencies by effectively utilizing the solar spectrum. Previously, we have developed III-V MJ solar cells using smart stack technology, a mechanical stacking technology that uses a Pd nanoparticle array. In this study, we fabricated an InGaP/AlGaAs//Cu x In 1Ày Ga y Se 2 three-junction solar cell by applying modified smart stack technology with a Pd nanoparticle array and adhesive material. Using adhesive material (silicone adhesive), the bonding stability was improved conspicuously. The total efficiency achieved was 27.2% under AM 1.5 G solar spectrum illumination, which is a better performance compared to our previous result (24.2%) for a two-terminal solar cell. The performance was achieved by optimizing the structure of the upper GaAs-based cell and by using a Cu x In 1Ày Ga y Se 2 solar cell with a specialized performance for an MJ configuration. In addition, we assessed the reliability of the InGaP/AlGaAs//Cu x In 1Ày Ga y Se 2 three-junction solar cell through a heat cycle test (from À40 C to +85 C; 50 cycles) and were able to confirm that our solar cells show high resistivity under severe conditions. The results demonstrate the potential of III-V//Cu x In 1Ày Ga y Se 2 MJ solar cells as next-generation photovoltaic cells for applications such as vehicle-integrated photovoltaics; they also demonstrate the effectiveness of modified smart stack technology in fabricating MJ cells. K E Y W O R D S bonding technology, Cu x In 1Ày Ga y Se 2 solar cells, III-V solar cells, mechanical stack, multijunction solar cells 1 | INTRODUCTION According to a reported scenario on the growth of the photovoltaics (PV) market, the world's cumulative PV-installed capacity will increase to 20 terawatts by 2040. 1 To realize this target, reducing the cost of PV power generation is an important goal of global energy policies. 2 In addition, applications to innovative markets, such as small mobilities (automobiles 3-5 and flight vehicles), need to be implemented. Against this background, the development of new, efficient, and low-cost solar cells has become an urgent priority. One promising solution is the multijunction (MJ) solar cell, which has already achieved high efficiencies (>30%) in combination with III-V solar cells. MJ photovoltaic cells based

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“…The fabrication process followed the method described in previous papers. [17][18][19]24 All samples were grown on a 2-in. diameter GaAs (001) substrate that was miscut 4 deg toward the (111)B direction in the custom hot-wall reactor (Taiyo Nippon Sanso, H260) at atmospheric pressure.…”

Section: Methodsmentioning

confidence: 99%

“…The value of the InGaP subcell was slightly larger than 1350 mV, the value of the reference InGaP solar cells reported in a previous paper. 18 This also means that the luminescence extraction efficiency of the InGaP subcell is lower than that of the GaAs subcell. For multijunction devices with three or more junctions, the effect of the voltage offset difference may be negligible because the voltage offset is averaged between the subcells.…”

Section: Current-voltage Analysis Using Electroluminescence Measurementsmentioning

confidence: 99%

“…HVPE utilizes cost-effective group-III metals such as gallium and indium and offers high growth rates of several hundred μm∕h, which reduces manufacturing cost. InGaP and GaAs single-junction solar cells 17,18 and an InGaP/GaAs tandem solar cell 19 have been demonstrated in previous work. To improve the performance of multijunction solar cells, it is necessary to know the basic characteristics of individual subcells, such as the short-circuit current density (J sc ) and open-circuit voltage (V oc ).…”

Section: Introductionmentioning

confidence: 99%

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Luminescence effects on subcell current–voltage analysis in InGaP/GaAs tandem solar cells

et al. 2020

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We investigate the role of luminescence effects on the analysis of solar cell properties. InGaP/GaAs tandem solar cells fabricated using hydride vapor phase epitaxy have a luminescent coupling (LC) efficiency of 0.6% from the top to the bottom subcell. We investigate the impact of LC on subcell current-voltage curve analysis using electroluminescence (EL) measurements. EL efficiency measurements were performed using a reference InGaP single-junction device. It was found that the luminescence extraction from the top subcell, and therefore its luminescence collection efficiency, is lower than that from the bottom subcell. This is due to LC from the top subcell to the bottom subcell. By considering the luminescence extractions of each subcell, more reasonable subcell voltages than those found by conventional methods can be obtained. © The Authors. Published by SPIE under a Creative Commons Attribution 4.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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Ultrafast growth of InGaP solar cells via hydride vapor phase epitaxy

Cited by 16 publications

References 29 publications

InGaP/GaAs dual‐junction solar cells with AlInGaP passivation layer grown by hydride vapor phase epitaxy

InGaP/GaAs dual‐junction solar cells with AlInGaP passivation layer grown by hydride vapor phase epitaxy

III‐V//Cu_xIn_1−yGa_ySe₂ multijunction solar cells with 27.2% efficiency fabricated using modified smart stack technology with Pd nanoparticle array and adhesive material

Luminescence effects on subcell current–voltage analysis in InGaP/GaAs tandem solar cells

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Ultrafast growth of InGaP solar cells via hydride vapor phase epitaxy

Cited by 16 publications

References 29 publications

InGaP/GaAs dual‐junction solar cells with AlInGaP passivation layer grown by hydride vapor phase epitaxy

InGaP/GaAs dual‐junction solar cells with AlInGaP passivation layer grown by hydride vapor phase epitaxy

III‐V//CuxIn1−yGaySe2 multijunction solar cells with 27.2% efficiency fabricated using modified smart stack technology with Pd nanoparticle array and adhesive material

Luminescence effects on subcell current–voltage analysis in InGaP/GaAs tandem solar cells

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III‐V//Cu_xIn_1−yGa_ySe₂ multijunction solar cells with 27.2% efficiency fabricated using modified smart stack technology with Pd nanoparticle array and adhesive material