“…InP/GaInP QD materials have also shown ultrafast absorption recovery times, which has allowed their use as semiconductor saturable absorber mirrors, for example, to mode-lock Ti: Sapphire lasers [9]. In addition, the gain recovery time for InP QDs has been shown to be even faster than for InAs QDs, dominated by a sub-200 fs component [10]. The potential for ultrafast electrically-pumped monolithic mode-locked QD lasers operating at visible wavelengths where there are numerous applications requiring short optical pulses have yet to be Z. Li, C. P. Allford, S. Shutts, R. Alharbi and P. S. Smowton are with School of Physics & Astronomy, Cardiff University, Cardiff, CF24 3AA, UK (liz74@cardiff.ac.uk; allfordcp1@cardiff.ac.uk; shuttss@cardiff.ac.uk; alharbirs@cardiff.ac.uk; smowtonpm@cardiff.ac.uk).…”