2010
DOI: 10.1063/1.3518715
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Ultrafast gain dynamics in InP quantum-dot optical amplifiers

Abstract: We measured the gain dynamics at the ground-state transition in an electrically pumped InP/AlGaInP quantum-dot optical amplifier at room temperature by femtosecond differential transmission. The gain shows an ultrafast recovery within 200 fs, even faster than in state-of-the-art InAs/GaAs quantum-dot amplifiers. This finding, likely to be due to the less confined and more closely spaced hole levels in InP dots, is promising for optical signal processing at high bit rates. We furthermore measured the pump-induc… Show more

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Cited by 15 publications
(8 citation statements)
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“…S5. The former is required for single mode waveguide samples, such as semiconductor optical amplifiers, and has been used by us for a variety of different samples 16,17,[48][49][50][51][52] . It is also used for FWM imaging of nanoparticles which we reported in Ref.…”
Section: Optical Setupmentioning
confidence: 99%
“…S5. The former is required for single mode waveguide samples, such as semiconductor optical amplifiers, and has been used by us for a variety of different samples 16,17,[48][49][50][51][52] . It is also used for FWM imaging of nanoparticles which we reported in Ref.…”
Section: Optical Setupmentioning
confidence: 99%
“…In this context and the context of the single-photon amplifier, it is important to understand the intrinsic relaxation mechanisms which can influence preparation and readout of the few-particle quantum states via ultrashort light pulses. To this end, charge-carrier dynamics in QDs based on III-V semiconductors with shallow quantum confinement has been studied both in large ensembles [18][19][20] and single specimens [7,[21][22][23][24][25][26]. These developments have culminated in demonstrations of optical writing and readout of spin states in single or coupled QDs [13][14][15][16][17]27].…”
Section: Introductionmentioning
confidence: 99%
“…InP/GaInP QD materials have also shown ultrafast absorption recovery times, which has allowed their use as semiconductor saturable absorber mirrors, for example, to mode-lock Ti: Sapphire lasers [9]. In addition, the gain recovery time for InP QDs has been shown to be even faster than for InAs QDs, dominated by a sub-200 fs component [10]. The potential for ultrafast electrically-pumped monolithic mode-locked QD lasers operating at visible wavelengths where there are numerous applications requiring short optical pulses have yet to be Z. Li, C. P. Allford, S. Shutts, R. Alharbi and P. S. Smowton are with School of Physics & Astronomy, Cardiff University, Cardiff, CF24 3AA, UK (liz74@cardiff.ac.uk; allfordcp1@cardiff.ac.uk; shuttss@cardiff.ac.uk; alharbirs@cardiff.ac.uk; smowtonpm@cardiff.ac.uk).…”
Section: Introductionmentioning
confidence: 99%