Ultrafast gain dynamics in InAs-InGaAs quantum-dot amplifiers

Borri, Paola; Langbein, Wolfgang Werner; Hvam, Jørn Märcher; Heinrichsdorff, F.; Mao, Ming; Bimberg, D.

doi:10.1109/68.849054

Cited by 159 publications

(68 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…The capture time and phonon-assisted relaxation times are in good agreement with values typically reported in the literature [7], [8]. The Auger-assisted relaxation is fast compared to most previous reports but agrees with the value found in [4]. The fast relaxation might be related to the existence of an overgrowth layer, which only enters the equations through the value of the above coefficients.…”

Section: Modelsupporting

confidence: 80%

“…The authors gratefully acknowledge P. Borri et al of [4] for supplying the experimental data shown in Fig. 1.…”

Section: Acknowledgmentmentioning

confidence: 99%

“…The two key features necessary in such devices are high differential gain and fast carrier relaxation into the active states. High differential gain has proved to be present in many QD devices [2], [3] and, recently, ultrafast gain recovery on the scale of 100 fs has been demonstrated [4]. Despite these unique features, the maximum modulation frequency of present day QD lasers at room temperature is only 5-6 GHz [5], which is slower than bulk and QW devices.…”

Section: Introductionmentioning

confidence: 99%

“…RESULTS Fig. 1 shows the experimental and numerical pump probe response in the saturated gain regime of a 475-m-long InAs QD-amplifier (see [4] for device details) when a 150-fs pump Fig. 2.…”

Section: Modelmentioning

confidence: 99%

“…The differential gain and the TPA coefficient have been fitted to the experimental data and the values found in this way are m and m . All other parameter values are determined from the information supplied about the device [4], [9].…”

Section: Modelmentioning

confidence: 99%

See 4 more Smart Citations

Ultrafast gain recovery and modulation limitations in self-assembled quantum-dot devices

Berg

Bischoff

Magnúsdóttir

et al. 2001

IEEE Photon. Technol. Lett.

221

View full text Add to dashboard Cite

. Ultrafast gain recovery and modulation limitations in self-assembled quantum-dot devices. I E E E Photonics Technology Letters, 13(6) Abstract-Measurements of ultrafast gain recovery in self-assembled InAs quantum-dot (QD) amplifiers are explained by a comprehensive numerical model. The QD excited state carriers are found to act as a reservoir for the optically active ground state carriers resulting in an ultrafast gain recovery as long as the excited state is well populated. However, when pulses are injected into the device at high-repetition frequencies, the response of a QD amplifier is found to be limited by the wetting-layer dynamics.Index Terms-Gain recovery, quantum-dot amplifiers, ultrafast.

show abstract

Section: Modelsupporting

confidence: 80%

“…The authors gratefully acknowledge P. Borri et al of [4] for supplying the experimental data shown in Fig. 1.…”

Section: Acknowledgmentmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Modelmentioning

confidence: 99%

Section: Modelmentioning

confidence: 99%

See 3 more Smart Citations

Ultrafast gain recovery and modulation limitations in self-assembled quantum-dot devices

Berg

Bischoff

Magnúsdóttir

et al. 2001

IEEE Photon. Technol. Lett.

221

View full text Add to dashboard Cite

show abstract

Spectral Hole-Burning and Carrier-Heating Dynamics in Quantum-Dot Amplifiers: Comparison with Bulk Amplifiers

Borri

Langbein

Hvam

et al. 2001

phys. stat. sol. (b)

Self Cite

View full text Add to dashboard Cite

The ultrafast gain dynamics in an electrically pumped InAs/InGaAs/GaAs quantum-dot amplifier are measured at room temperature with femtosecond resolution, and compared with results on an InGaAsP bulk amplifier. The role of spectral hole burning and carrier heating in the recovery of the gain compression is investigated. Reduced carrier heating for both gain and refractive index dynamics of the quantum-dot device is found, which is a promising prerequisite for high-speed applications.Gain and refractive index dynamics in semiconductor optical amplifiers (SOAs) have been widely investigated in the past, both experimentally and theoretically. Besides a fundamental interest, these studies give a direct insight about the ultimate limit in highspeed performances of semiconductor devices due to the intrinsic carrier dynamics. It is well known that the subpicosecond dynamics in bulk and quantum-well (QW) SOAs are dominated by spectral hole burning (SHB), with a recovery time below 100 fs, and carrier-heating (CH) effects, recovering over several hundreds of femtoseconds [1]. The recent achievement of fabricating InAs-based electrically pumped quantum-dot (QD) lasers [2] allows to extend these previous investigations to the quasi zero-dimensional case. Quantum-dot lasers fabricated until now do not show modulation bandwidths better than QW lasers, and are conjectured to be limited by the carrier capture into and relaxation in the QDs [2, 3]. However, most of the work dedicated until now to characterize directly carrier dynamics in self-organized QDs used mainly time-resolved photoluminescence experiments on unprocessed samples at low temperatures in the picosecond and nanosecond regime.In this work, the ultrafast gain dynamics of an electrically pumped InAs/InGaAs/ GaAs QD amplifier are measured at room temperature (RT), as schematically shown in Fig. 1, and compared with a bulk InGaAsP amplifier. A pump-probe experiment is performed with an heterodyne detection scheme, similar to earlier measurements on bulk and quantum well active waveguides [1]. Fourier-limited 150 fs laser pulses are 1 ) Corresponding

show abstract

Optoelectronic Properties and Applications of Quantum Dots

Hvam

2019

Optical Properties of Materials and Their Applications

View full text Add to dashboard Cite

Ultrafast gain dynamics in InAs-InGaAs quantum-dot amplifiers

Cited by 159 publications

References 12 publications

Ultrafast gain recovery and modulation limitations in self-assembled quantum-dot devices

Ultrafast gain recovery and modulation limitations in self-assembled quantum-dot devices

Spectral Hole-Burning and Carrier-Heating Dynamics in Quantum-Dot Amplifiers: Comparison with Bulk Amplifiers

Optoelectronic Properties and Applications of Quantum Dots

Contact Info

Product

Resources

About