2012
DOI: 10.1021/jp305497b
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Ultrafast Excited-State Dynamics and Dispersion Studies of Third-Order Optical Nonlinearities in Novel Corroles

Abstract: Ultrafast nonlinear optical (NLO) properties of four novel Corroles in the visible spectral range (660–800 nm) were evaluated using picosecond Z-scan technique. Ultrafast excited state dynamics have also been appraised with picosecond (ps) and femtosecond (fs) degenerate pump–probe techniques using excitation wavelengths of 800 and 600 nm, respectively. The excitation by 800 nm photons resulted in two-photon absorption at adequately high peak intensities, thereby facilitating the access to higher excited state… Show more

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Cited by 61 publications
(51 citation statements)
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“…For the fitting, we used the k f (fluorescence rate constant) from the fluorescence lifetime data presented in our earlier reports. 32 Further, we used the triplet lifetime data from the ns-TA kinetics for the rate-constant k 4 and fixed it for fitting procedure. Figure 12 shows the global fitting of the TA spectra recorded for Ge-TTC.…”
Section: ■ Results and Discussionmentioning
confidence: 99%
“…For the fitting, we used the k f (fluorescence rate constant) from the fluorescence lifetime data presented in our earlier reports. 32 Further, we used the triplet lifetime data from the ns-TA kinetics for the rate-constant k 4 and fixed it for fitting procedure. Figure 12 shows the global fitting of the TA spectra recorded for Ge-TTC.…”
Section: ■ Results and Discussionmentioning
confidence: 99%
“…39 They attributed the 2.4 ps decay to the S 2 →S 1 * process. Baskin et al have estimated that vibrationally excited Soret→Q y , Q x and Q y →Q x electronic relaxation occurs in less than 100 fs for H 2 TPP by the femtosecond upconversion fluorescence method, following excitation at 398 nm in benzene.…”
Section: S 2 →S 1 * Internal Conversionmentioning
confidence: 99%
“…The PDPP measurements [1] were performed using 800 nm, 1 kHz pulses (Figure 1(a)). Figure1(b) shows the typical pump probe reflectivity measurements of LT-GaAs and SI-GaAs at 800 nm pulses achieved with average energy of 10 µJ/pulse.…”
Section: Resultsmentioning
confidence: 99%