Ultrafast electron dynamics on the silicon surface excited by an intense femtosecond laser pulse

Electron emission and ultrafast low-fluence plasma formation during single-shot femtosecond laser surface ablation of various materials

“…This viewpoint is also typical for ablation by ultrashort (mostly, femto second) laser pulses [4,5], even though in this case thermal dynamics is preceded by high temperature electronic dynamics and electron emission [6][7][8], with the latter saturating at low fluences F ~ 1-10 mJ/cm 2 because of the blocking effect of the related electron space charge [6]. As a result, electron emis sion is considered to be saturated over the broad fem tosecond laser fluence range from low (~mJ/cm 2 ) to moderately high (~J/cm 2 ) fluences, approaching the electron ion plasma formation regime (F ӷ 10 J/cm 2 ) [9], and for this reason was typically neglected in the energy balance of ultrafast electronic dynamics [10].…”

Tuning of Magnetic Optical Response in a Dielectric Nanoparticle by Ultrafast Photoexcitation of Dense Electron–Hole Plasma

“…where the above mentioned ρ eh -dependent bandgap shrinkage effect on interband transitions is accounted by introducing effective photon frequency ω * = ω + Θρ eh /ρ bgr with the factor Θ, 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 [35][36][37]39 The bulk EHP frequency ω pl is defined as…”

“…Commonly, such model dielectric permittivity, being a function of ρ eh , can be expressed as a sum of interband-and intraband-transition based terms:37,39 …”

Influence of accumulation effects on heating of silicon surface by femtosecond laser pulses

“…where non-irradiative recombination coefficient is equal tǒ 1 = 10 7 1/s [24], and Auger recombination coefficient can vary between 10 −30 and 10 −32 cm 6 /s [24,26].…”