2016
DOI: 10.1021/jacs.6b08725
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Ultrafast Dynamics of Photongenerated Holes at a CH3OH/TiO2 Rutile Interface

Abstract: Photogenerated charge carrier dynamics near molecule/TiO interfaces are important for the photocatalytic and photovoltaic processes. To understand this fundamental aspect, we performed a time-domain ab initio nonadiabatic molecular dynamics study of the photogenerated hole dynamics at the CHOH/rutile TiO(110) interface. We studied the forward and reverse hole transfer between TiO and CHOH as well as the hole energy relaxation to the valence band maximum. First, we show that the hole-trapping ability of CHOH de… Show more

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Cited by 136 publications
(184 citation statements)
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References 74 publications
(120 reference statements)
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“…Since both the hole transfer and relaxation dynamics at CH 3 OH/TiO 2 interface are affected by the e–p interaction, it is interesting to investigate the temperature dependence. As shown by Chu et al, decreasing the temperature from 100 to 30 K suppress the forward hole transfer and the hole relaxation process. Recently, both the forward and reverse hole transfer were measured in CH 3 OH/C 3 N 4 system.…”
Section: Interficial Charge Transfer Dynamicsmentioning
confidence: 88%
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“…Since both the hole transfer and relaxation dynamics at CH 3 OH/TiO 2 interface are affected by the e–p interaction, it is interesting to investigate the temperature dependence. As shown by Chu et al, decreasing the temperature from 100 to 30 K suppress the forward hole transfer and the hole relaxation process. Recently, both the forward and reverse hole transfer were measured in CH 3 OH/C 3 N 4 system.…”
Section: Interficial Charge Transfer Dynamicsmentioning
confidence: 88%
“…Due to the e–p interaction, the HOMO state crosses TiO 2 valance band (VB) states frequently during a MD run, which lead to sufficient AD charge transfer. As discussed in Reference , the CO stretching mode at 900 cm −1 plays an important role in the reverse hole transfer.…”
Section: Interficial Charge Transfer Dynamicsmentioning
confidence: 89%
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