Ultrafast directional nickel-silicide-induced crystallization of amorphous silicon under high-density current stressing

Abstract

Dopant and thickness dependence of metal-induced lateral crystallization of amorphous silicon filmsStructural and electrical properties of polycrystalline silicon produced by low-temperature Ni silicide mediated crystallization of the amorphous phase Low temperature metal induced crystallization of amorphous silicon using a Ni solution

In situtransmission electron microscopy imaging of grain growth in a platinum nanobridge induced by electric current annealing

“…This grain growth can be the result of the local Joule heating caused by the electric current. Here, we call this process electric current annealing (ECA), and it has been used to tune the grain growth and control the drifting of domain walls [9][10][11][12]. It is also a powerful tool to fabricate structures beyond the limit of traditional techniques such as nanogaps and nanofilaments [13][14][15].…”

AlCl3-induced crystallization of amorphous silicon thin films

“…But it generally takes tens of hours to crystallize a-Si films even at 600 8C. One of the methods to enhance the solid-phase crystallization is to deposit metal film or metal particles on a-Si films [3][4][5][6][7][8][9][10][11]. However, the metals are incorporated into Si films during crystallization and most of them exist as deep-level impurities in Si and act as recombination centers.…”

Low temperature polycrystalline silicon thin films and thin film transistors

“…Some of the small grains fill up the inter-grain boundaries of large grains ( Besides the field enhancement effect in MIC process [75,114], a current effect presents in the FALC [ 115 ]. The Joule heating caused by current crowding at the silicide locations accelerates the nucleation formation and grain growth from the sites.…”