We report an optically gated transistor composed of CdSe
nanocrystals
(NCs), sensitized with the dye zinc β-tetraaminophthalocyanine
for operation in the first telecom window. This device shows a high
ON/OFF ratio of 6 orders of magnitude in the red spectral region and
an unprecedented 4.5 orders of magnitude at 847 nm. By transient absorption
spectroscopy, we reveal that this unexpected infrared sensitivity
is due to electron transfer from the dye to the CdSe NCs within 5
ps. We show by time-resolved photocurrent measurements that this enables
fast rise times during near-infrared optical gating of 47 ± 11
ns. Electronic coupling and accelerated nonradiative recombination
of charge carriers at the interface between the dye and the CdSe NCs
are further corroborated by steady-state and time-resolved photoluminescence
measurements. Field-effect transistor measurements indicate that the
increase in photocurrent upon laser illumination is mainly due to
the increase in the carrier concentration while the mobility remains
unchanged. Our results illustrate that organic dyes as ligands for
NCs invoke new optoelectronic functionalities, such as fast optical
gating at sub-bandgap optical excitation energies.