Ultrafast carrier relaxation in SnSe  (x=1, 2) thin films observed using femtosecond time-resolved transient absorption spectroscopy

Yan, Tingwei; Han, Yaping; Fu, Qiang; Xu, Tongtong; Yin, Shengwen; Wu, Wenzhi; Liu, Weilong

doi:10.1016/j.optmat.2020.110440

Cited by 9 publications

(5 citation statements)

References 41 publications

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“…The fast and slow decay components could be attributed to the defect trapping and inter-band carrier recombination in β-GaS thin films, respectively. These results are analogous to that reported for other semiconductor materials (Fang et al, 2016;Li et al, 2017;Kong et al, 2018;Yan et al, 2020;Li et al, 2021).…”

Section: Femtosecond Ta Resultssupporting

confidence: 90%

Ultrafast Nonlinear Optical Response and Carrier Dynamics in Layered Gallium Sulfide (GaS) Single-Crystalline Thin Films

Chen

Yang

et al. 2021

Front. Mater.

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Gallium sulfide (GaS) is a layered metal monochalcogenide semiconductor that has recently garnered considerable attention in various fields. In this study, we investigated the nonlinear absorption characteristics of multilayer β-GaS thin films on sapphire substrate by using femtosecond open-aperture Z-scan method. The β-GaS films exhibit saturable absorption behavior at 532 nm while nonlinear absorption appears under 650 nm excitation. The nonlinear absorption coefficient of β-GaS was determined to be −1.8 × 10–8 m/W and 4.9 × 10–8 m/W at 532 and 650 nm, respectively. The carrier dynamics of β-GaS films was studied via femtosecond transient absorption (TA) measurements. The TA results demonstrated that β-GaS films have broad photo-induced absorption in the visible regime and sub-nanosecond lifetime. Our results indicate that gallium sulfide has large nonlinear optical response and long carrier lifetime, which could be applied in future photonic devices.

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Section: Femtosecond Ta Resultssupporting

confidence: 90%

Ultrafast Nonlinear Optical Response and Carrier Dynamics in Layered Gallium Sulfide (GaS) Single-Crystalline Thin Films

Chen

Yang

et al. 2021

Front. Mater.

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“…The intermediate time constant τ 2 (≈2 ps) represents the ultrafast trapping process following photoexcitation. [36][37][38] As shown in Figure S3, Supporting Information, the energy interval from the top of valence band to the V mo defect state C D1 is about 1.67 eV. To verify the defect-assisted trapping effect in MoSi 2 N 4 film, the time constant τ 2 at different probe wavelengths are compared.…”

Section: Resultsmentioning

confidence: 99%

Exciton Self‐Trapping Effect in MoSi₂N₄ for Modulating Nonlinear Optical Process

Huang

Liang

Guo

et al. 2022

Advanced Optical Materials

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geometry same to micro-Raman measurement, where the diameter of incident spot is about 20 µm. The fs-pulsed laser in transient absorption spectroscopy setup outputs 25 fs pulses of 515 nm wavelength with a repetition rate of 1 KHz. The fs-pulsed laser (wavelength of 1030 nm) in Z-scan measurements and up-conversion photoluminescence tests has pulses with duration of 400 fs, and repetition rate of 100 kHz.

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“…The interpretation of selenium XPS signal is complex and the literature about XPS of SnSe x reports contradictory and wrong interpretation of Se and Sn signals. One can cite the absence of Se 3d 5/2 contribution in SnSe 73 or an area of 3d 3/2 contribution higher than the 3d 5/2 in ref. 74 .…”

Section: Resultsmentioning

confidence: 99%

Atmospheric pressure chemical vapor deposition growth of vertically aligned SnS₂ and SnSe₂ nanosheets

et al. 2021

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Ultrafast carrier relaxation in SnSe (x=1, 2) thin films observed using femtosecond time-resolved transient absorption spectroscopy

Cited by 9 publications

References 41 publications

Ultrafast Nonlinear Optical Response and Carrier Dynamics in Layered Gallium Sulfide (GaS) Single-Crystalline Thin Films

Ultrafast Nonlinear Optical Response and Carrier Dynamics in Layered Gallium Sulfide (GaS) Single-Crystalline Thin Films

Exciton Self‐Trapping Effect in MoSi₂N₄ for Modulating Nonlinear Optical Process

Atmospheric pressure chemical vapor deposition growth of vertically aligned SnS₂ and SnSe₂ nanosheets

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Ultrafast carrier relaxation in SnSe (x=1, 2) thin films observed using femtosecond time-resolved transient absorption spectroscopy

Cited by 9 publications

References 41 publications

Ultrafast Nonlinear Optical Response and Carrier Dynamics in Layered Gallium Sulfide (GaS) Single-Crystalline Thin Films

Ultrafast Nonlinear Optical Response and Carrier Dynamics in Layered Gallium Sulfide (GaS) Single-Crystalline Thin Films

Exciton Self‐Trapping Effect in MoSi2N4 for Modulating Nonlinear Optical Process

Atmospheric pressure chemical vapor deposition growth of vertically aligned SnS2 and SnSe2 nanosheets

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Exciton Self‐Trapping Effect in MoSi₂N₄ for Modulating Nonlinear Optical Process

Atmospheric pressure chemical vapor deposition growth of vertically aligned SnS₂ and SnSe₂ nanosheets