Ultrafast All‐Optical Switching of Germanium‐Based Flexible Metaphotonic Devices

Lim, Wen Xiang; Manjappa, Manukumara; Srivastava, Yogesh Kumar; Cong, Longqing; Kumar, Abhishek; MacDonald, Kevin F.; Singh, Ranjan

doi:10.1002/adma.201705331

Cited by 126 publications

(113 citation statements)

References 55 publications

Supporting

Mentioning

111

Contrasting

Order By: Relevance

“…As a result, it can be used for purposes where external influences are introduced to realize more functionalities of the Fano devices. Active photoswitching of Fano resonance has been demonstrated by R. Singh and his group using optically active medium such as solution‐processed perovskites, silicon, germanium, and MoS 2 in asymmetric SRRs. An ultralow fluence of <7 µJ cm −2 of optical pump beam is sufficient for resonant switching behavior in organic–inorganic lead halide perovskites as shown in Figure a.…”

Section: Applicationsmentioning

confidence: 99%

Shaping High‐Q Planar Fano Resonant Metamaterials toward Futuristic Technologies

Lim

Manjappa

Pitchappa

et al. 2018

Advanced Optical Materials

Self Cite

View full text Add to dashboard Cite

Advances in plasmonic metamaterials have been rapidly evolving with innovations aimed at developing metadevices for real-world applications. In reality, energy losses in plasmonic systems are prevalent and it is of paramount importance to come up with solutions that could overcome the limitations that impede further advancements toward the miniaturization of optoelectronic metadevices. High-Q Fano resonance as a scattering phenomenon can be easily triggered by introducing asymmetry into plasmonic systems, and thus it offers a simple approach for reducing radiative losses through lineshape engineering. High-Q Fano resonance possesses narrow linewidth and intensely confined electromagnetic fields, which makes it viable for widespread applications. The purpose of this review is to consolidate the current advances and contributions that high-Q Fano resonance has made in the metamaterial community. Two general modes of energy loss including radiative and nonradiative losses are introduced and possible ways to overcome these challenges are examined. Furthermore, applications based on high-Q Fano resonance including sensors, lasing spasers, and optical switches are discussed, embracing the future of Fano resonance based high performance photonic technologies.

show abstract

Section: Applicationsmentioning

confidence: 99%

Shaping High‐Q Planar Fano Resonant Metamaterials toward Futuristic Technologies

Lim

Manjappa

Pitchappa

et al. 2018

Advanced Optical Materials

Self Cite

View full text Add to dashboard Cite

show abstract

“…In our device layout, Ge is simply evaporated as single layer over the Fano-resonant metamaterial array on the epitaxially grown SoS substrate. Different from the ErAs/GaAs superlattices where ultrafast photoswitching of inductive-capacitive (LC) resonances were achieved previously [51], amorphous Ge has structural defects that result in trap-assisted recombination sites [49,52], which helps promote ultrafast carrier recombination (around three orders of magnitude faster than superlattices) and the device fabrication based on it requires no alternating between materials. This is because it only involves the deposition of a single-element semiconductor film, instead of satisfying the lattice matching condition.…”

Section: Introductionmentioning

confidence: 99%

Controllable all-optical modulation speed in hybrid silicon-germanium devices utilizing the electromagnetically induced transparency effect

et al. 2020

View full text Add to dashboard Cite

AbstractIncorporating auxiliary all-optical modulation speeds as optional response modes into a single metamaterial is a promising research route towards advanced terahertz (THz) applications ranging from spectroscopy and sensing to communications. Particularly, a plethora of dynamically tunable optical functionalities are determined by the resonant light-matter interactions. Here, an electromagnetically induced transparency (EIT) resonator stacked with two traditional semiconductor films, namely silicon (Si) and germanium (Ge), is experimentally demonstrated. A giant switching feature of the EIT window with a peak at 0.65 THz occurs when the Si or Ge film is excited by ultrafast optical pulses, allowing for an optically tunable group delay of the THz wave packet. The recovery time for the slow and fast on-off-on switching cycles is 1.7 ns and 11 ps, respectively, which are mapped as the pump delay time of Si and Ge. Two optional response modes are integrated on the same device, where the modulation speed varies by three orders of magnitude, endowing the modulator more compact. This work provides new prospects for the design and construction of novel chip-scale THz devices based on EIT and their applications in areas of sophisticated optical buffering and active filtering.

show abstract

“…Various structures in metamaterials also provide ideas for achieving all-optical switching with high performance. In designs of switchable devices, ultrafast all-optical switching has been achieved based on silicon, crystalline Ge, gallium arsenide, and ErAs/GaAs superlattices [13][14][15][16].…”

Section: Introductionmentioning

confidence: 99%

All-Optical Switching Based on the Plasma Channel Induced by Laser Pulses

Tan

Zhan

et al. 2018

Advances in Condensed Matter Physics

View full text Add to dashboard Cite

We display a theoretical and experimental study of all-optical switching for signal lasers based on the plasma channel induced by the control laser. Using the plasma channel generated in the carbon disulfide (CS 2 ) solution, the signal light can be modulated as some spatial distributions including unchanging, ring-shaped beam, and other intensity profiles. The modulation on the signal light can be conveniently adjusted by changing the control light's incident intensity distribution. We can infer the dark spot shape in the modulated signal laser through the intensity profile of control laser beam. These results provide the great potential of plasma channel induced by lasers as an all-optical switching for various optoelectronic applications.

show abstract

Ultrafast All‐Optical Switching of Germanium‐Based Flexible Metaphotonic Devices

Cited by 126 publications

References 55 publications

Shaping High‐Q Planar Fano Resonant Metamaterials toward Futuristic Technologies

Shaping High‐Q Planar Fano Resonant Metamaterials toward Futuristic Technologies

Controllable all-optical modulation speed in hybrid silicon-germanium devices utilizing the electromagnetically induced transparency effect

All-Optical Switching Based on the Plasma Channel Induced by Laser Pulses

Contact Info

Product

Resources

About