In this paper, we combine inverse design concept and direct binary search algorithm to demonstrate three ultra-compact high efficiency and low crosstalk on-chip integrated optical interconnection basic devices in the entire wavelength range of 1,400-1600 nm based on silicon-on-insulator platform. A 90-degree waveguide bend with a footprint of only 2.4 × 2.4 μm 2 is designed, whose transmission efficiency up to 0.18 dB. A waveguide crossing with a footprint of only 2.4 × 2.4 μm 2 is designed, which can provide insertion loss of less than 0.5 dB and crosstalk (CL) of lower than − 19 dB. A same direction waveguide crossing with footprint of only 2.4 × 3.6 μm 2 is designed, which can provide the insertion loss of less than 0.56 dB and the crosstalk of lower than − 21 dB. Then, we use them to form several ultra-compact optical interconnect basic structures and performed the simulation calculation. They overall achieve high performance. This will significantly improve the integration density. The concept of integrated photonics was introduced in 1969 by Miller 1 , which made a great contribution to the on-chip integrated optical interconnection. On-chip integrated optical interconnection is an emerging technique for large capacity data communications. The waveguide bends and crossings are one of the most critical components of optical interconnection. There are many waveguide bends and crossings designed by conventional approaches. A 5 μm radius 90-degree circular bend with 400 × 220 nm silicon strip waveguide was designed 2. Although the loss of the circular bend is 0.023 dB in FDTD simulation, the design method need a lot of complicated artificial adjustment experiments. A 90-degree partial Euler bends with an effective radius of 50 µm was fabricated on a silicon nitride photonic 3. The bend loss was within 0.2 dB, but it was only limited to the wavelength of 850 nm and had a large footprint. A 275 µm radius circular bend was designed using a silicon waveguide 4 , which achieved very low loss. Unfortunately the length of the radius and waveguide is too long. Bogaerts et al. 5 proposed a 90-degree adiabatic bend for silicon waveguides. The total bend loss was 0.001 dB. However, the curve radius and circular wire section were up to 5 µm and 25 µm, respectively. Other waveguide bends with 2µm 6 , 4µm 7 , 10µm 8 radius were designed using a straight waveguide. Although the loss was below 0.3 dB loss, they had a large footprint and need a very long waveguide. Various studies have also been conducted on waveguide crossings. A low-loss waveguide crossing using the self-imaging properties of multimode interference (MMI) structures was designed 9 , which achieved a loss of only 0.009 dB. But, the length is also fairly long (> 140 µm in the case). A multimode-interference (MMI)-based crossing in high-index-contrast silicon wire waveguides was reported, which had an MMI crossing of ~ 0.4 dB insertion loss 10. However, its large 13 × 13µm 2 footprint may be an issue for dense integration. Recently there have been reports attempt...