Ultrabroadband terahertz field detection by photoconductive antennas based on multi-energy arsenic-ion-implanted GaAs and semi-insulating GaAs

Liu, Tze-An; Tani, Masahiko; Nakajima, Makoto; Hangyo, Masanori; Pan, Ci‐Ling

doi:10.1063/1.1604191

Cited by 71 publications

(39 citation statements)

References 9 publications

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“…It is important to emphasize that PCA for detection and PCA for emission are differently designed. The narrower is the gap, the lower is the electric field required for obtaining an appreciable current; therefore, PCA for detection exhibits narrower gaps (∼10 μm) when compared with typical gaps of PCA for emission (> 50 μm) [14,26,27]. Factors affecting the performance of a PCA are similar to those for the emitter: semiconductor bandgap, carrier lifetime and mobility, and antenna gap [14].…”

Section: Photoconductive Antennamentioning

confidence: 69%

THz Measurement Systems

Angrisani¹,

Cavallo²,

Liccardo³

et al. 2016

New Trends and Developments in Metrology

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The terahertz (THz) frequency region is often defined as the last unexplored area of the electromagnetic spectrum. Over the past few years, the full access has been the objective of intense research efforts. Progress in this area has played an important role in opening up the possibility of using THz electromagnetic radiation (T-waves) in science and in realworld applications. T-waves are not perceptible by the human eye, are not ionizing, and have the ability to cross many non-conducting materials such as paper, fabrics, wood, plastic, and organic tissues. Moreover, the use of THz radiation allows non-destructive analysis of the materials under investigation both by study of their "fingerprint" via spectroscopic measurements and by high-resolution spatial imaging operations, exploiting the see-through capability of T-waves. Such technology can be applied in diverse areas, spanning from biology to chemical, pharmaceutical, environmental sciences, etc. In this chapter, we will present the typical architecture of measurement systems based on the THz technology, detailing what are the parameters that define their performance, the measurement methods, and the related errors and uncertainty, and focusing at the end on the use of time-domain spectroscopy for the evaluation of different material properties in this specific frequency region.

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Section: Photoconductive Antennamentioning

confidence: 69%

THz Measurement Systems

Angrisani¹,

Cavallo²,

Liccardo³

et al. 2016

New Trends and Developments in Metrology

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“…Поэтому при оптическом возбуждении структуры LT-GaAs способны генерировать пикосекундные (и более короткие) электрические импульсы, имеющие спектральный максимум в THz-области [3]. В большинстве исследований по созданию LT-GaAs [4,5] постросто-вый отжиг проводится в in situ в камере эпитаксиальной установки при температурах до 600…”

Section: поступило в редакцию 3 июля 2017 гunclassified

Влияние режима отжига на свойства терагерцевой фотопроводящей антенны на основе LT-GaAs

Nomoev¹,

Васильевский²,

Виниченко³

et al. 2018

Письма В Журнал Технической Физики

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Методом молекулярно-лучевой эпитаксии выращены пленки LT-GaAs (low temperature gallium arsenide -арсенид галлия, выращенный методом моле-кулярно-лучевой эпитаксии при низкой температуре роста) на подложках GaAs(100) при температуре 230• C и проведен постростовый отжиг. На поверх-ности пленок изготовлены фотопроводящие антенны с флажковой геометрией. Получены мощностные зависимости терагерцевого отклика при различных значениях напряжения смещения и температуры постростового отжига. Ме-тодом терагерцевой спектроскопии исследованы спектральные характеристики изготовленных фотопроводящих антенн. Определен диапазон оптимальной температуры постростового отжига (670−720• C) пленок LT-GaAs.

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“…Low-Temperature growth GaAs remains however a far better choice as soon as wavelengths below 1 µm are used [7]. Although numerous works have addressed the realization of photomixers [8][9][10][11], very few coupling antenna designs have been proposed.…”

Section: Introductionmentioning

confidence: 99%

THz fractal antennas for electrical and optical semiconductor emitters and receptors

Gaubert

Chusseau

Giani

et al. 2004

phys. stat. sol. (c)

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THz waves have recently attracted considerable interest mainly because of their various applications. Efficient and compact CW sources are currently under development. Their optimization requires the most efficient coupling of THz radiation from the intrinsic inner semiconductor source to the outside world. In terms of compactness and planarity, this is best achieved using antennas that are fabricated using common processes in semiconductor technology. Although most antennas are narrow band devices, wide bands are expected from fractal 2D geometries like the Sierpinski gasket. Original results are presented on the design, fabrication and THz transmission of 2D metallic fractal deposited on highly resistive GaAs substrate as well as on thin SiNx membranes. Experimental transmission measurements are compared to theory.

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Ultrabroadband terahertz field detection by photoconductive antennas based on multi-energy arsenic-ion-implanted GaAs and semi-insulating GaAs

Cited by 71 publications

References 9 publications

THz Measurement Systems

THz Measurement Systems

Влияние режима отжига на свойства терагерцевой фотопроводящей антенны на основе LT-GaAs

THz fractal antennas for electrical and optical semiconductor emitters and receptors

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