Ultrabroadband Imaging Based on Wafer‐Scale Tellurene

Abstract

High‐resolution imaging is at the heart of the revolutionary breakthroughs of intelligent technologies, and it is established as an important approach toward high‐sensitivity information extraction/storage. However, due to the incompatibility between non‐silicon optoelectronic materials and traditional integrated circuits as well as the lack of competent photosensitive semiconductors in the infrared region, the development of ultrabroadband imaging is severely impeded. Herein, the monolithic integration of wafer‐scale tellurene photoelectric functional units by exploiting room‐temperature pulsed‐laser deposition is realized. Taking advantage of the surface plasmon polaritons of tellurene, which results in the thermal perturbation promoted exciton separation, in situ formation of out‐of‐plane homojunction and negative expansion promoted carrier transport, as well as the band bending promoted electron–hole pair separation enabled by the unique interconnected nanostrip morphology, the tellurene photodetectors demonstrate wide‐spectrum photoresponse from 370.6 to 2240 nm and unprecedented photosensitivity with the optimized responsivity, external quantum efficiency and detectivity of 2.7 × 107 A W−1, 8.2 × 109% and 4.5 × 1015 Jones. An ultrabroadband imager is demonstrated and high‐resolution photoelectric imaging is realized. The proof‐of‐concept wafer‐scale tellurene‐based ultrabroadband photoelectric imaging system depicts a fascinating paradigm for the development of an advanced 2D imaging platform toward next‐generation intelligent equipment.

Quantum tailoring for polarization-discriminating Bi2S3 nanowire photodetectors and their multiplexing optical communication and imaging applications

“…[1][2][3][4][5] In general, low-dimensional vdWMs can be divided into three categories according to their microstructures, including 0D vdWMs (e.g., C 60 , 6 Sb 2 O 3 , 7 etc. ), 1D vdWMs (e.g., selenium, 8 tellurium, 9 Sb 2 Se 3 , 10,11 Ta 2 Ni 3 Se 8 , 12 etc. ), and 2D vdWMs (e.g., black phosphorus, 13 MoS 2 , 14,15 WSe 2 , 15 Bi 2 O 2 Se, 16 ReSe 2 , 17 CrTe 2 , 18 Ge 4 Se 9 , 19 ZnIn 2 S 4 , 20 AgInP 2 S 6 , 21 etc.).…”

“…), 1D vdWMs ( e.g. , selenium, 8 tellurium, 9 Sb 2 Se 3 , 10,11 Ta 2 Ni 3 Se 8 , 12 etc. ), and 2D vdWMs ( e.g.…”

Atomic Layer Deposition Route to Scalable, Electronic-Grade van der Waals Te Thin Films

“…While it exhibits thickness-dependent electronic properties − similarly to TMDs, it possesses promising physical properties such as strong spin–orbital coupling with its chiral structure, , enhanced environmental stability, , and relatively low lattice thermal conductivity . Also, the potentials of Te can allow a wide range of applications in (opto-)­electronics, ,− spintronics, thermoelectrics, and selector devices with its outstanding p-type transport behavior, robust chirality, enhanced thermoelectric figure of merit, and fast switching performance, respectively. For the practical integration of such superior properties into the nanoscale regime, a tailored growth technique that principally yields its thin-film form must be developed to address the inherent quasi-1D character and high vapor pressure of Te , leading to the flake or locally anisotropic growth at elevated temperatures. , In this sense, a low-temperature process is an essential prerequisite for preventing its thermal diffusion and desorption while highly scalable and reliable production is still desired.…”

“…For the practical integration of such superior properties into the nanoscale regime, a tailored growth technique that principally yields its thin-film form must be developed to address the inherent quasi-1D character and high vapor pressure of Te , leading to the flake or locally anisotropic growth at elevated temperatures. , In this sense, a low-temperature process is an essential prerequisite for preventing its thermal diffusion and desorption while highly scalable and reliable production is still desired. Thus far, physical vapor deposition techniques including thermal evaporation, , sputtering, , and pulsed laser deposition have been exclusively employed for Te deposition.…”

“…34,35 In this sense, a low-temperature process is an essential prerequisite for preventing its thermal diffusion and desorption while highly scalable and reliable production is still desired. Thus far, physical vapor deposition techniques including thermal evaporation, 25,27 sputtering, 31,36 and pulsed laser deposition 30 have been exclusively employed for Te deposition.…”