Ultrabroad tuning range (100  nm) of external-cavity continuous-wave high-power semiconductor lasers based on a single InGaAs quantum well

Podoskin, A. A.; Golovin, V. S.; Gavrina, P. S.; Veselov, D. A.; Zolotarev, V. V.; Shamakhov, V. V.; Nikolaev, D. N.; Leshko, A. Yu.; Сліпченко, С. О.; Pikhtin, N. A.; Kop’ev, P. S.

doi:10.1364/ao.58.009089

Cited by 13 publications

(5 citation statements)

References 23 publications

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“…In this case, optimization of the mask and window widths is still required to reduce the difference for GRE in the outermost and center regions of the ultra-wide window. On the other hand, the effect of the luminescence wavelength variation across the window is useful in various types of tunable laser sources; in particular, in high-power tunable semiconductor lasers with a wide aperture [49,50]. A 100-nm-wide tuning was demonstrated in [50] for a high-power semiconductor laser with a 100-µm-wide aperture based on a planar QW with a constant composition and thickness.…”

Section: Discussionmentioning

confidence: 99%

Surface Nanostructuring during Selective Area Epitaxy of Heterostructures with InGaAs QWs in the Ultra-Wide Windows

et al. 2020

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Selective area epitaxy (SAE) is widely used in photonic integrated circuits, but there is little information on the use of this technique for the growth of heterostructures in ultra-wide windows. Samples of heterostructures with InGaAs quantum wells (QWs) on GaAs (100) substrates with a pattern of alternating stripes (100-μm-wide SiO2 mask/100-μm-wide window) were grown using metalorganic chemical vapour deposition (MOCVD). It was found that due to a local change in the growth rate of InGaAs QW in the window, the photoluminescence (PL) spectra measured from the edge to the center of the window exhibited maximum blueshifts of 14 and 19 meV at temperatures of 80 K and 300 K, respectively. Using atomic force microscopy, we have demonstrated that the surface morphologies of structures grown using standard epitaxy or SAE under identical MOCVD growth conditions correspond to a step flow growth with a step height of ~1.5 ML or a step bunching growth mode, respectively. In the structures grown with the use of SAE, a strong variation in the surface morphology in an ultra-wide window from its center to the edge was revealed, which is explained by a change in the local misorientation of the layer due to a local change in the growth rate over the width of the window.

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Section: Discussionmentioning

confidence: 99%

Surface Nanostructuring during Selective Area Epitaxy of Heterostructures with InGaAs QWs in the Ultra-Wide Windows

et al. 2020

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“…The primary components of the Littman-Metcalf cavity encompass the gain chip, the collimating lens, the diffraction grating, and the tuning mirror. The diffraction grating, which includes transmission [35], reflection [36], and blazed gratings [37,38], functions as the principal mode selection element, facilitating wavelength tuning and spectral linewidth narrowing. Light emanating from the gain chip impinges on the diffraction grating, which spatially segregates the spectral components of the gain chip output.…”

Section: Configurations and Operating Principles Of The Wavelengthswe...mentioning

confidence: 99%

Advances in narrow linewidth and wide tuning range external-cavity wavelength-swept lasers

Sheng,

Wang,

Huang

et al. 2024

Front. Phys.

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An external-cavity wavelength-swept laser, characterized by its exceptional temporal coherence and extensive tuning range, serves as a crucial light source for cutting-edge fields such as fiber sensing, lidar, and spectroscopy. The burgeoning growth of optical communication technology has escalated the demand for lasers with narrow linewidth and broad tuning range, thereby catalyzing the swift advancement of external-cavity wavelength-swept diode lasers and their diverse applications. This article comprehensively presents the configurations and operating principles of these lasers, and provides an in-depth review of their development status, specifically focusing on those with narrow linewidth and wide tuning range. The aim is to offer a valuable reference for researchers involved in the development and application of wavelength-swept lasers.

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“…The performance of the Littrow-ECDL strongly depends on the grating. Commonly used diffraction gratings include reflection [17][18][19], transmission [20], and blazed gratings [21]. First, the light emitted from the gain chip, after being collimated by the lens, diffracts on the grating.…”

Section: Littrow-ecdlmentioning

confidence: 99%

“…The grating has a high sensitivity; therefore, the structure is more susceptible to the influence of external light noise. Currently, Tsinghua University in China [45], Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences (CIOMP) [17], the University of Texas, Austin in the USA [46], Peter the Great Saint-Petersburg Polytechnic University in Russia [18], Australian National University [21], the University of Tampere in Finland [19], Brolis Semiconductors UAB in Lithuania [47], Aston University in England [48], among other research institutions [49][50][51][52][53], have conducted in-depth research on this topic.…”

Section: Littrow-ecdlmentioning

confidence: 99%

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Advances in wide-tuning and narrow-linewidth external-cavity diode lasers

Cui

Lei

Chen

et al. 2022

Sci. China Inf. Sci.

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The external-cavity diode laser is advantageous in terms of low noise, high side-mode suppression ratio, high temperature stability, simple structure, and low cost, which has been the preferred scheme to realize wide-tuning and narrow-linewidth characteristics. Thus, it has been widely used in optical communication, lidar, environmental monitoring, spectral analysis, optical coherence tomography, and other frontier fields. Herein, we introduce the technical scheme and review the development status of wide-tuning and narrow-linewidth external-cavity diode lasers in detail. Primarily, the structure, working principles, and performance characteristics of external-cavity diode lasers are deeply analyzed according to different structures. The structural characteristics, key technologies, optical performance and application fields of state-of-theart studies in recent years are discussed. Finally, the challenges and potential development prospects of wide-tuning and narrow-linewidth external-cavity diode lasers are analyzed and discussed.

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Ultrabroad tuning range (100 nm) of external-cavity continuous-wave high-power semiconductor lasers based on a single InGaAs quantum well

Cited by 13 publications

References 23 publications

Surface Nanostructuring during Selective Area Epitaxy of Heterostructures with InGaAs QWs in the Ultra-Wide Windows

Surface Nanostructuring during Selective Area Epitaxy of Heterostructures with InGaAs QWs in the Ultra-Wide Windows

Advances in narrow linewidth and wide tuning range external-cavity wavelength-swept lasers

Advances in wide-tuning and narrow-linewidth external-cavity diode lasers

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