Ultra-wideband L-band EDFA using phosphorus co-doped silica-fiber

Tanaka, Shinsuke; Imai, Kazutami; Yazaki, Tomonori; Tanaka, Hideaki; Yamashita, Takanori; Yoshida, Minoru

doi:10.1109/ofc.2002.1036483

Cited by 10 publications

(6 citation statements)

References 3 publications

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“…These properties make the P-Si EDF a top contender for commercial extended L-band EDFAs. However, previous demonstrations of P-containing EDFAs showed relatively low PCE [8,9,13].…”

Section: Introductionmentioning

confidence: 74%

“…Although their gain bandwidth can in principle be extended by lengthening the erbium fiber, lowering the erbium inversion, and employing significantly more filtering to achieve gain equalization across the wider band, both noise figure (NF) and power conversion efficiency (PCE) degrade drastically as a result. Several new or modified erbium host materials have been used to mitigate signal excited state absorption, resulting in a higher gain over the longer wavelength range, such as tellurite [5,11], bismuth-oxide [6,7], antimony silicate [12], P-doped aluminosilicate [8,13], and phosphosilicate [9] fibers. Although tellurite and bismuth-oxide based EDFAs have wider bandwidths compared to that of demonstrated phosphosilicate (P-Si) EDFAs, P-Si EDFAs have been shown to exhibit lower noise figures (under 6 dB) when the gain bandwidth is extended to 1620 nm (see Table 1).…”

Section: Introductionmentioning

confidence: 99%

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Erbium-doped phosphosilicate fiber amplifiers: a comparison of configurations for the optimization of noise figure and conversion efficiency

Bolen

2005

Photonic Applications in Devices and Communication Systems

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Extending the amplification bandwidth of erbium-doped fiber amplifiers (EDFAs) is one of the most cost-effective means of expanding the fiber transmission capacity. In conventional aluminosilicate EDFAs, gain drops sharply beyond 1605nm. Several new or modified erbium host materials have been used to extend the amplification band to beyond the conventional L-band, such as tellurite, bismuth-oxide, antimony silicate, P-doped aluminosilicate, and phosphosilicate EDFAs. Although tellurite and bismuth-oxide based EDFAs have wider bandwidths compared to that of demonstrated phosphosilicate (P-Si) EDFAs, P-Si EDFAs have been shown to provide better noise performance when the gain bandwidth is extended to 1620 nm. In addition, unlike tellurite or bismuth-oxide fibers, P-Si EDF does not exhibit increased nonlinearity or weakened reliability, compared to conventional aluminosilicate EDFs. Furthermore, phosphosilicate erbium fiber is compatible with other silica fibers and can be fusion spliced to the standard SMF silica fiber with high return loss and extremely low splice loss. These properties make the P-Si EDF a top contender for commercial extended L-band EDFAs.One key issue in the design of the extended L-band amplifiers is the optimization of power conversion efficiency while keeping the noise figure low. In this paper, we explore various amplifier configurations and compare their performances experimentally. We report high-power P-Si EDFAs with simultaneous improvement of PCE and NF by a combination of a single-pass low-noise stage with one or two double-pass high-efficiency stages. The best configuration yields high power (22dBm), low NF (5.5dB maximum over 1570-1620 nm band), and high efficiency (27% overall PCE after gain flattening).

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“…These properties make the P-Si EDF a top contender for commercial extended L-band EDFAs. However, previous demonstrations of P-containing EDFAs showed relatively low PCE [8,9,13].…”

Section: Introductionmentioning

confidence: 74%

Section: Introductionmentioning

confidence: 99%

Erbium-doped phosphosilicate fiber amplifiers: a comparison of configurations for the optimization of noise figure and conversion efficiency

Bolen

2005

Photonic Applications in Devices and Communication Systems

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“…With strong mechanical-and environmental-stability and low loss, phosphorus (P) and/or aluminum (Al) co-doped silicate are the most common glass hosts for EDFs in the current communication systems. It was reported that P/Al co-doped silicate EDFs extended the L-band gain compared to aluminosilicate EDFs [5], [6]. Ytterbium/phosphorus (Yb/P) co-doped silicate EDFs were employed to improve the L-band amplification.…”

Section: Introductionmentioning

confidence: 99%

1480 nm Diode-Pumped Er³⁺:Yb³⁺ Co-Doped Phospho-Alumino-Silicate Fiber for Extending the L-Band Gain Up to 1625 nm

Zhai

Sahu

2023

J. Lightwave Technol.

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In this paper, we report erbium/ytterbium (Er/Yb) co-doped phospho-alumino-silicate fibers (EYDFs) fabricated by the modified chemical vapor deposition (MCVD) and solution doping technique, to extend the L-band gain up to 1625 nm. Fibers with different doping concentrations and Yb-to-Er ratios were studied in terms of the spectroscopic properties and optical amplification in the L-band when pumped at 1480 nm. A higher Yb-to-Er ratio suppressed the signal-induced excited-state absorption (ESA) effect and also improved the amplifier gain in the L-band. A maximum gain of 15.5 dB at 1625 nm was achieved for the fiber with an Yb-to-Er ratio of 3.5. The gain coefficient was 0.039 dB/mW and the saturation output power was 21.5 dBm at 1600 nm. On the other hand, one highly doped fiber with the Er2O3 concentration of 0.5 mol% and an Yb-to-Er ratio of 2 was demonstrated to have the controlled Er concentration quenching and a reduced amplifier device length, exhibiting 12.9 dB gain and 6.3 dB noise figure (NF) at 1625 nm, with <5.8 dB NF from 1575 to 1623 nm. What's more, the temperature-dependent amplifier performance was studied, over the temperature range of -60 to 80 o C. The temperature-dependent-gain (TDG) coefficient and its zero-point wavelength were reported. An increased L-band gain was achieved by cooling the fiber.

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“…Phosphorus/aluminum (P/Al) co-doped silica EDFs have been employed to extend the erbium gain profile. Compared to Al co-doped silica EDFs, a higher P/Al ratio is more preferable to redshift the L-band gain [3,4].…”

Section: Introductionmentioning

confidence: 99%

Temperature-Dependent Study on L-Band EDFA Characteristics Pumped at 980 nm and 1480 nm in Phosphorus and Aluminum-Rich Erbium-Doped Silica Fibers

Zhai

Halder

Núñez-Velázquez

et al. 2022

J. Lightwave Technol.

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In this paper, we present a comparative study on temperature-dependent spectroscopic characteristics and L-band amplifier performance for aluminum-rich erbium-doped fiber (EDF) and in-house fabricated phosphorus co-doped EDF. Different pumping configurations were studied to conclude that the pump wavelength of 980nm with unequal forward/backward pump powers exhibited better temperature stability. Phosphorus EDF provided 19.4±1.4dB gain and 4.6±0.2dB noise figure (NF) from 1575-1615nm at room temperature (RT), for a multi-channel input signal of -25dBm in each channel, whereas the aluminumrich EDF provided 20.3±5.1dB gain and 5.3±0.8dB NF. Using a single-channel input signal of -25dBm at 1625nm, phosphorus EDF maintained >10dB gain with a 9.6dB and 12dB gain increment than aluminum-rich EDF at RT and -60 o C, respectively. The temperature-dependent gain (TDG) coefficient from 1575-1615nm was in the range -0.006 to -0.044 dB/ o C for phosphorus EDF and 0.011 to -0.023 dB/ o C for aluminum-rich EDF, over the temperature range -60 to +80 o C. We propose a hybrid L-band amplifier concatenating aluminum-rich EDF with phosphorus EDF, to suppress the temperature dependence of phosphorus EDF and improve the gain bandwidth restriction of aluminum-rich EDF. The hybrid EDF exhibited multi-channel 20.9±3.9dB gain and 3.7±0.6dB NF from 1575-1615nm at RT. The TDG coefficient of the hybrid EDF remained almost constant from 1585-1615nm, contributing to a temperature-insensitive gain flatness.

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Ultra-wideband L-band EDFA using phosphorus co-doped silica-fiber

Cited by 10 publications

References 3 publications

Erbium-doped phosphosilicate fiber amplifiers: a comparison of configurations for the optimization of noise figure and conversion efficiency

Erbium-doped phosphosilicate fiber amplifiers: a comparison of configurations for the optimization of noise figure and conversion efficiency

1480 nm Diode-Pumped Er³⁺:Yb³⁺ Co-Doped Phospho-Alumino-Silicate Fiber for Extending the L-Band Gain Up to 1625 nm

Temperature-Dependent Study on L-Band EDFA Characteristics Pumped at 980 nm and 1480 nm in Phosphorus and Aluminum-Rich Erbium-Doped Silica Fibers

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Ultra-wideband L-band EDFA using phosphorus co-doped silica-fiber

Cited by 10 publications

References 3 publications

Erbium-doped phosphosilicate fiber amplifiers: a comparison of configurations for the optimization of noise figure and conversion efficiency

Erbium-doped phosphosilicate fiber amplifiers: a comparison of configurations for the optimization of noise figure and conversion efficiency

1480 nm Diode-Pumped Er3+:Yb3+ Co-Doped Phospho-Alumino-Silicate Fiber for Extending the L-Band Gain Up to 1625 nm

Temperature-Dependent Study on L-Band EDFA Characteristics Pumped at 980 nm and 1480 nm in Phosphorus and Aluminum-Rich Erbium-Doped Silica Fibers

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1480 nm Diode-Pumped Er³⁺:Yb³⁺ Co-Doped Phospho-Alumino-Silicate Fiber for Extending the L-Band Gain Up to 1625 nm