2023
DOI: 10.1016/j.jpowsour.2023.232810
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Ultra-thin thermally grown silicon dioxide nanomembrane for waterproof perovskite solar cells

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Cited by 5 publications
(6 citation statements)
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“…Transformed by the Arrhenius equation, at pH 7.4, and 37 • C the dissolution rate of SiO 2 is 4 × 10 −2 nm•d −1 , indicating an exceptionally long lifespan of around 70 years [128]. Also, t-SiO 2 with a very low water transmission rate of 1.53 × 10 −3 g•m −2 •d −1 at 85 • C and 500 nm thickness which significantly increases the lifespan even in harsh environments, can serve as an excellent encapsulation layer [277]. Consequently, the substrate removal etching process enables to use of single-crystalline Si without deformation and t-SiO 2 as an encapsulation layer, which not only extends the lifespan of the flexible electronics but also allows to maintain performance even in harsh environments.…”
Section: Substrate Removal Etchingmentioning
confidence: 99%
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“…Transformed by the Arrhenius equation, at pH 7.4, and 37 • C the dissolution rate of SiO 2 is 4 × 10 −2 nm•d −1 , indicating an exceptionally long lifespan of around 70 years [128]. Also, t-SiO 2 with a very low water transmission rate of 1.53 × 10 −3 g•m −2 •d −1 at 85 • C and 500 nm thickness which significantly increases the lifespan even in harsh environments, can serve as an excellent encapsulation layer [277]. Consequently, the substrate removal etching process enables to use of single-crystalline Si without deformation and t-SiO 2 as an encapsulation layer, which not only extends the lifespan of the flexible electronics but also allows to maintain performance even in harsh environments.…”
Section: Substrate Removal Etchingmentioning
confidence: 99%
“…In the process of bonding the SOI wafer and the flexible substrate, the buffer layer serves a crucial role in the aspect of structural defects. The buffer layer prevents cracks in the t-SiO 2 layers caused by Young's modulus difference during the Si etching process [277]. Generally, materials with Young's modulus in the GPa range similar to t-SiO 2 , such as PI, are used to prevent these cracks [279,280].…”
Section: Substrate Removal Etchingmentioning
confidence: 99%
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“…This projection may have been somewhat optimistic, as subsequent studies showed dissolution rates consistent with a lifespan of around 10.5 years for a film of the same thickness [224]. Still, there is no doubt that transferred t-SiO 2 films and material systems incorporating them demonstrate remarkably long predicted lifetimes and good barrier performance [216,221,225]. Silicon carbide (SiC), specifically amorphous silicon carbide (a-SiC), has also made waves in recent years due to its outstanding barrier properties and chemical stability, but physical transfer is also sometimes necessary due to a relatively high deposition temperature (typically > 300 • C, compatible with only highly thermally stable polymers such as polyimides).…”
Section: Inorganic Thin Filmsmentioning
confidence: 99%
“…In studies on the encapsulation structure design of UV-curable resin sealed PSCs, the stacking or blending of resin with other materials was proven to be effective approach. For example, Cho et al [144] developed a three-layer encapsulation structure for PSCs with a SiO 2 waterproof layer in which UV-curable epoxy resin (SU-8) was spin-coated and cured as a buffer layer between the SiO 2 nanomembrane and silicone adhesive (Figure 9b). With a Young's modulus of approximately 4 GPa, UV-curable epoxy resin provided a stable connection between the upper and lower layers with disparate Young's moduli.…”
Section: Uv-curable Resin Used As Encapsulation Materialsmentioning
confidence: 99%