Ultra-thin films of polysilsesquioxanes possessing 3-methacryloxypropyl groups as gate insulator for organic field-effect transistors

Nakahara, Yoshio; Kawa, Haruna; Yoshiki, Jun; Kumei, Maki; Yamamoto, Hiroyuki; Oi, Fumio; Yamakado, Hideo; Fukuda, Hisashi; Kimura, Kazuhiro

doi:10.1016/j.tsf.2012.07.087

Cited by 9 publications

(8 citation statements)

References 27 publications

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“…The same result was reported by Nakahara et al that the surface of PSQ films thermally cured with TMPTA was smoother than that of PSQ films without TMPTA. 8 It is thus suggested that the addition of TMPTA improves surface flatness of PSQ films. It is also considered that the pentacene grains deposited on the UV-light cured PSQ layers became larger because they grew on the smoother PSQ surface.…”

Section: Resultsmentioning

confidence: 99%

“…2 3 Therefore, polysilsesquioxane (PSQ), which is a solution processible inorganic-organic hybrid dielectric material, has been investigated by various research groups because PSQ is not only a good insulator but also a low-temperature curable polymer through the sol-gel reaction. [4][5][6][7][8] For example, Bao et al investigated three types of PSQ cured at 135 C as gate dielectrics for TFTs using various organic semiconductors. They reported that pentacene TFTs using gate dielectric layers of PSQ compring methyl and phenyl groups as functional groups exhibited carrier mobility of 0.1 cm 2 V −1 s −1 .…”

Section: Introductionmentioning

confidence: 99%

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Investigation of Ultraviolet Light Curable Polysilsesquioxane Gate Dielectric Layers for Pentacene Thin Film Transistors

Shibao

Nakahara

Uno

et al. 2016

j nanosci nanotechnol

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Polysilsesquioxane (PSQ) comprising 3-methacryloxypropyl groups was investigated as an ultraviolet (UV)-light curable gate dielectric-material for pentacene thin film transistors (TFTs). The surface of UV-light cured PSQ films was smoother than that of thermally cured ones, and the pentacene layers deposited on the UV-Iight cured PSQ films consisted of larger grains. However, carrier mobility of the TFTs using the UV-light cured PSQ films was lower than that of the TFTs using the thermally cured ones. It was shown that the cross-linker molecules, which were only added to the UV-light cured PSQ films, worked as a major mobility-limiting factor for the TFTs.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Investigation of Ultraviolet Light Curable Polysilsesquioxane Gate Dielectric Layers for Pentacene Thin Film Transistors

Shibao

Nakahara

Uno

et al. 2016

j nanosci nanotechnol

Self Cite

View full text Add to dashboard Cite

show abstract

“…Excellent dielectric performances have been reported using polysilsesquioxanes (PSQs) with functional side chains as solgel-type inorganic polymer dielectrics. [13][14][15] PSQ is an inorganic-organic hybrid material containing an inorganic backbone framework of SiOSi and derivatives with organic side chains, resulting in excellent thermal, mechanical, and chemical stability while maintaining superior flexibility. [16] Engineering the side chains by introducing permanent dipoles can enhance polarization characteristics.…”

Section: Research Articlementioning

confidence: 99%

Photopatternable High‐kPolysilsesquioxane Dielectrics for Organic Integrated Devices: Effects of UV Curing on Chemical and Electrical Properties

Park

Shin

et al. 2023

Adv Funct Materials

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Polysilsesquioxanes (PSQs) have generated great interest as solution‐processable inorganic polymers for obtaining high‐dielectric‐constant (k) dielectrics. Engineering the side chains in PSQs can enhance the polarization characteristics and provide different functionalities, such as photopatternability and ferroelectric performance. In this study, two types of UV curable high‐k PSQs are prepared by introducing epoxy‐containing side chains to the PSQs: 1) glycidyl epoxy‐containing linear groups and 2) bulky cycloaliphatic epoxy‐containing groups. The physical, chemical, and electrical properties of these two materials after UV curing are investigated. Both PSQ films show high dielectric strength and are successfully patterned after exposure to UV light. The structure of the side chains influences the UV curing behavior and capacitance characteristics of the PSQ dielectrics. These differences determine the driving behavior of the fabricated organic thin‐film transistors, which exhibits either stable or ferroelectric operation. Finally, logic gates and memory cells exhibiting low‐voltage and non‐destructive operations are successfully integrated using UV cured PSQs. This approach for engineering PSQs with the purpose of achieving desirable photopatternability and high dielectric or ferroelectric performance can be used to realize simple and inexpensive solution‐processing techniques for next generation integrated electronics.

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“…Indeed, the PSQ materials were often utilized as gate dielectrics for OFETs. [ 15 ] In light of these points, we posited that using a properly designed PSQ would allow for the production of an insulating material with properties suitable for OFETs or OFET derivatives electronics capable of being driven using low operating voltages.…”

Section: Introductionmentioning

confidence: 99%

The Hidden Potential of Polysilsesquioxane for High‐k: Analysis of the Origin of its Dielectric Nature and Practical Low‐Voltage‐Operating Applications beyond the Unit Device

Kwon

Shin

et al. 2021

Adv Funct Materials

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Low-voltage-operating high-performance organic field-effect transistors (OFETs) are regarded as the building blocks of analog and digital integrated circuits for next-generation electronics. To fulfill this, such an OFET must have high-dielectric constant (k) characteristics for increasing the capacitance values to make enough of a field-effect charge, a hydrophobic surface that does not cause charge trapping, and a low leakage current property to guarantee operating stability. This study demonstrates a new strategy to induce high-k characteristics (>8) with durable polysilsesquioxane (PSQ)-based dielectrics. This strategy involves realizing a dipolar side-chain reorientation under an electric field and its applications to low-voltage-driving OFETs showing high field-effect mobility levels as high as 27 cm 2 V -1 s -1 . Different PSQs are characterized, and the differences in their characteristics lead to distinct polarization phenomena, resulting in different hysteresis behaviors during device operation. The printed unit devices can also be fabricated on flexible platforms and integrated devices through these materials and show robust switching or memory performances under low-voltage-operation conditions. Therefore, this facile but powerful synthesis strategy for high-k PSQ dielectrics can pave a new path for the production of practical printable high-k dielectrics for organic electronics and hence realize next-generation integrated electronics.

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Ultra-thin films of polysilsesquioxanes possessing 3-methacryloxypropyl groups as gate insulator for organic field-effect transistors

Cited by 9 publications

References 27 publications

Investigation of Ultraviolet Light Curable Polysilsesquioxane Gate Dielectric Layers for Pentacene Thin Film Transistors

Investigation of Ultraviolet Light Curable Polysilsesquioxane Gate Dielectric Layers for Pentacene Thin Film Transistors

Photopatternable High‐kPolysilsesquioxane Dielectrics for Organic Integrated Devices: Effects of UV Curing on Chemical and Electrical Properties

The Hidden Potential of Polysilsesquioxane for High‐k: Analysis of the Origin of its Dielectric Nature and Practical Low‐Voltage‐Operating Applications beyond the Unit Device

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