2020
DOI: 10.1088/1361-6439/ab8909
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Ultra-small pressure sensors fabricated using a scar-free microhole inter-etch and sealing (MIS) process

Abstract: This paper presents a tiny 0.4 mm × 0.4 mm piezoresistive absolute pressure sensor chip with a fabrication cost as low as 0.01 US$/die. With the thin-film under bulk-silicon technique, a very thin but uniform poly-silicon pressure-sensing diaphragm is formed beneath a bulk-silicon beam-island structure to accommodate piezoresistors. The thin diaphragm exhibits a high sensitivity, and the beam-island-reinforced structure helps reduce deflection and improve linearity. The sensor is fabricated using a novel scar-fr… Show more

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Cited by 15 publications
(12 citation statements)
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“…Thus, a very dense array of pressure sensors is required to measure the pulse width. To achieve high-resolution pulse signal measurement, we used ultra-small absolute pressure sensors for the pulse sensor array, which were previously developed by our research group [ 43 ]. Herein, the sensor is absolute pressure sensor, which consists of a very thin but uniform polysilicon diaphragm beneath a bulk-silicon beam-island structure.…”
Section: Design and Fabrication Of Arterial Pulse Acquisition Systemmentioning
confidence: 99%
See 1 more Smart Citation
“…Thus, a very dense array of pressure sensors is required to measure the pulse width. To achieve high-resolution pulse signal measurement, we used ultra-small absolute pressure sensors for the pulse sensor array, which were previously developed by our research group [ 43 ]. Herein, the sensor is absolute pressure sensor, which consists of a very thin but uniform polysilicon diaphragm beneath a bulk-silicon beam-island structure.…”
Section: Design and Fabrication Of Arterial Pulse Acquisition Systemmentioning
confidence: 99%
“…(Reproduced with permission from Ref. [ 43 ] provided by IOP Publishing, Ltd, United Kingdom of Great Britainand Northern Ireland).…”
Section: Figurementioning
confidence: 99%
“…In order to completely solve the multiple contradictions and problems mentioned above, a novel single-chip high-temperature pressure sensor with ultra-small size, high performance and low fabrication-cost is proposed in this study. The sensors are designed with a very small chip-size of 0.5 mm × 0.5 mm and fabricated in single-layer (111)silicon SOI wafers by using our group developed thin-film under bulk (TUB-silicon) process [16] to construct a beamisland reinforced diaphragm for achieving both high sensitivity and low nonlinearity. In the following sections, detailed description about design, fabrication and testing results of the high-temperature pressure sensor will be elaborated as follows.…”
Section: Introductionmentioning
confidence: 99%
“…Silicon has been widely used in the fabrication of highperformance MEMS pressure sensors [33][34][35][36]. It has high and stable Young's modulus (∼160 GPa, about 100 times that of most polymers [37]), much larger piezoresistive sensitivity (dozens of times higher than the strain sensitivity of most metals [38]) and better fabrication compatibility with the semiconductor process.…”
Section: Introductionmentioning
confidence: 99%