Ultra-short pulsed fiber-based lasers around 2.1 um and their applications

Tolstik, Nikolai; Richter, R.; Skogen, Marius; Astrauskas, Ignas; Sorokin, Evgeni; Sorokina, Irina T.

doi:10.1117/12.2558005

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“…confirmed the specificity of reaching the permanent modification regime at 2‐µm wavelength with picosecond pulses by comparing the results of nonlinear propagation simulations at wavelengths between 1.55 and 2.35 µm. [ 201,202 ] Similar to the nonlinear propagation models presented in Section 3, the calculations rely on the solution of the nonlinear Schrödinger equation (NLSE). For 1‐µJ pulses, the domain of high free‐carrier density at 1.95‐ and 2.15‐µm wavelength is larger than at 1.55‐ and 2.35‐µm wavelength.…”

Section: Solutions For Laser Direct Writing In Siliconmentioning

confidence: 99%

In‐Volume Laser Direct Writing of Silicon—Challenges and Opportunities

Chambonneau

Grojo

Tokel

et al. 2021

Laser & Photonics Reviews

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Laser direct writing is a widely employed technique for 3D, contactless, and fast functionalization of dielectrics. Its success mainly originates from the utilization of ultrashort laser pulses, offering an incomparable degree of control on the produced material modifications. However, challenges remain for devising an equivalent technique in crystalline silicon which is the backbone material of the semiconductor industry. The physical mechanisms inhibiting sufficient energy deposition inside silicon with femtosecond laser pulses are reviewed in this article as well as the strategies established so far for bypassing these limitations. These solutions consisting of employing longer pulses (in the picosecond and nanosecond regime), femtosecond‐pulse trains, and surface‐seeded bulk modifications have allowed addressing numerous applications.

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Section: Solutions For Laser Direct Writing In Siliconmentioning

confidence: 99%