Ultra-sensitive UV sensors based on porous silicon carbide thin films on silicon substrate

Naderi, Nima; Moghaddam, M. Azhdari

doi:10.1016/j.ceramint.2020.02.173

Cited by 33 publications

(14 citation statements)

References 24 publications

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“…The high threshold displacement energy of the material leads to a high level of radiation hardness compared with other common semiconductor detector materials [4,5], whereas the strong covalent bonds between atoms also makes the materials mechanically strong. Due to its radiation hardness, fast switching-capability, insensitivity to visible light, and biocompatibility, SiC is used for many other applications such as radiation hard electronics, high temperature coatings, biomedical sensors, UV-light sensors and others [6][7][8][9]. The radiation detectors based on 4H-polytype SiC epitaxial layers are mostly used as a charged particle [10,11] and neutron detectors [12].…”

Section: Introductionmentioning

confidence: 99%

Response of 4H-SiC Detectors to Ionizing Particles

et al. 2020

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We report the response of newly designed 4H-SiC Schottky barrier diode (SBD) detector prototype to alpha and gamma radiation. We studied detectors of three different active area sizes (1 × 1, 2 × 2 and 3 × 3 mm2), while all detectors had the same 4H-SiC epi-layer thickness of approximately µm, sufficient to stop alpha particles up to 6.8 MeV, which have been used in this study. The detector response to the various alpha emitters in the 3.27 MeV to 8.79 MeV energy range clearly demonstrates the excellent linear response to alpha emissions of the detectors with the increasing active area. The detector response in gamma radiation field of Co-60 and Cs-137 sources showed a linear response to air kerma and to different air kerma rates as well, up to 4.49 Gy/h. The detector response is not in saturation for the dose rates lower than 15.3 mGy/min and that its measuring range for gamma radiation with energies of 662 keV, 1.17 MeV and 1.33 MeV is from 0.5 mGy/h–917 mGy/h. No changes to electrical properties of pristine and tested 4H-SiC SBD detectors, supported by a negligible change in carbon vacancy defect density and no creation of other deep levels, demonstrates the radiation hardness of these 4H-SiC detectors.

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Section: Introductionmentioning

confidence: 99%

Response of 4H-SiC Detectors to Ionizing Particles

et al. 2020

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“…Barrier diodes are used in many areas, from energy to optoelectronic systems, especially sensors. [4][5][6][7] One of these diodes is 6H-SiC-based Schottky diodes. These diodes have attracted attention with their operability, especially in extreme conditions.…”

Section: Introductionmentioning

confidence: 99%

An Experimental Study on Artificial Intelligence‐Based Prediction of Capacitance–Voltage Parameters of Polymer‐Interface 6H‐SiC/MEH‐PPV/Al Schottky Diodes

Güzel

Çolak

2022

Physica Status Solidi (a)

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Herein, an artificial neural network (ANN) model has been developed to predict the capacitance values of the polymer‐interface 6H‐SiC/MEH‐PPV/Al Schottky diode depending on the frequency. In the training of the feed‐forward back‐propagation network model with five neurons in its hidden layer, 480 experimental data have been used. Of these, 70% of the data used in the development of the multilayer perceptron network has been used for network training, 15% for validation, and 15% for the test phase. The predictive performance of the network model has been analyzed by comparing the predicted values obtained from the ANN with the experimental data. For the developed ANN, the mean square error value is 4.34E‐06, the R‐value is 0.99728, and the average margin of deviation value is 0.03%.

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“…Doping of nanostructured silicon with carbon-containing materials is in demand from the point of view of creating wide-gap materials. In addition, the influence of the energy levels of defect centers and dopants can significantly improve the spectral dependences, both in the visible and in the infrared range, which in total will significantly increase the absorption band of photovoltaic structures [25,26].…”

Section: Introductionmentioning

confidence: 99%

Change of Optical Properties of Carbon-Doped Silicon Nanostructures under the Influence of a Pulsed Electron Beam

Darmenkulova

Aitzhanov

Zhumatova

et al. 2022

Journal of Nanotechnology

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In the work, porous silicon with observed photoluminescence was made from a p-type silicon substrate doped with boron and crystallographic orientation (100) using the method of electrochemical etching in a solution containing H2(SiF6) (silicon hydrofluoric acid) and ethyl alcohol. Thin carbon films were sprayed by high-frequency magnetron sputtering at room temperature onto the surface of porous silicon. The resulting carbon-doped thin films of porous silicon were irradiated on a pulsed electron booster and comparisons were made with nonirradiated films of porous silicon. To understand the effect of carbon on the properties of porous silicon films samples were analyzed by Raman spectroscopy, spectrophotometry, and scanning probe microscopy (SPM). The results of the SPM showed that the roughness of the samples increases after carbon doping on the surface of porous silicon. Thus, for the first time, experimental results were obtained on the effect of irradiation on carbon-doped porous silicon obtained in a solution containing hydrogen hexafluorosilicate H2(SiF6) and a significant change in its optical properties was shown. The results of the study showed that irradiated samples of carbon-doped porous silicon have better photoluminescence compared to nonirradiated samples.

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Ultra-sensitive UV sensors based on porous silicon carbide thin films on silicon substrate

Cited by 33 publications

References 24 publications

Response of 4H-SiC Detectors to Ionizing Particles

Response of 4H-SiC Detectors to Ionizing Particles

An Experimental Study on Artificial Intelligence‐Based Prediction of Capacitance–Voltage Parameters of Polymer‐Interface 6H‐SiC/MEH‐PPV/Al Schottky Diodes

Change of Optical Properties of Carbon-Doped Silicon Nanostructures under the Influence of a Pulsed Electron Beam

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