Ultra-sensitive polysilicon wire glucose sensor using a 3-aminopropyltriethoxysilane and polydimethylsiloxane-treated hydrophobic fumed silica nanoparticle mixture as the sensing membrane

Hsu, Po Kuei; Lin, Jing‐Jenn; Wu, You‐Lin; Hung, Wen-Chang; Cullis, A. G.

doi:10.1016/j.snb.2009.08.003

Cited by 27 publications

(34 citation statements)

References 28 publications

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“…He et al 10 observed a linear pH response with the combined acidic and basic characteristics of -NH 2 and -SiOH groups on the APTES modified ZnS/silica nanocable field effect transistor. Hsu et al 11 designed a glucose sensor based on a poly-silicon wire coated with a mixture of γ-APTES and silica nanoparticles (NPs). The improved detection limit was attributed to the large specific surface area of the silica NPs cluster and the increased amount of OH-bonds.…”

mentioning

confidence: 99%

Sensitivity Enhancement Mechanisms in Textured Dielectric based Electrolyte-Insulator-Semiconductor (EIS) Sensors

Kumar

Panda

2015

ECS J. Solid State Sci. Technol.

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The possible mechanisms governing the enhancement of sensitivities of Electrolyte-insulator-semiconductor (EIS) devices upon surface modification (texturing) realized by electrostatic attachment of silica particles using 3-aminopropyl triethoxysilane (APTES) as a linker are presented. EIS devices were fabricated with a textured dielectric surface using SiO 2 particles (of diameters 475, 135, and 70 nm) and screen printed Ag/AgCl electrodes. A maximum pH sensitivity of 52.4 mV/pH was achieved for the EIS device textured with 70 nm particle size while the sensitivity with the planar dielectric was 37.1 mV/pH. The APTES modification enhanced the adsorption of H + ions by protonation of the -NH 2 to -NH 3 + sites as seen from the capacitance versus voltage (C-V) hysteresis voltages. UV-Vis absorption and photoluminescence (PL) spectra indicated that the surface defects on the textured surface increased with decreasing particle size. Zeta potential measurements suggested a combined acid-base behavior of textured surface with the formation of -NH Electrolyte-insulator-semiconductor (EIS) based sensors are advantageous because of their small size, potential for mass production at low cost and easy integration with other silicon devices. The working principle is based on the MOS device with the electrolyte replacing the metal. Chemical sensitivity is an important performance parameter and is defined as the change in potential at the insulatorelectrolyte interface occurring with the change in the pH of the electrolyte. To improve the sensitivity, various high-K dielectric materials (such as Si 3 N 4 , Al 2 O 3 , Ta 2 O 5 , Gd 2 O 3 , Pr 2 O 3 , TiO 2 , Er 2 O 3 , Sm 2 O 3 and HoTiO 3 ) have been used to enhance the field effect interaction and the buffer capacity of the insulator. Also, their stack reduces the interface defects between the semiconductor and the insulator. 1-8The surface modification is another way by which the sensitivity can be improved. For example, Cheng et al. 9 used hydroxylated surface modified with 3-aminopropyl triethoxysilane (APTES) to show slight enhancement in the pH sensitivity and attributed the changes to the added contribution of the -NH 2 groups having higher proton affinity with improved signal-to-noise ratio. He et al.10 observed a linear pH response with the combined acidic and basic characteristics of -NH 2 and -SiOH groups on the APTES modified ZnS/silica nanocable field effect transistor. Hsu et al.11 designed a glucose sensor based on a poly-silicon wire coated with a mixture of γ-APTES and silica nanoparticles (NPs). The improved detection limit was attributed to the large specific surface area of the silica NPs cluster and the increased amount of OH-bonds. Wu et al.12 fabricated a label free DNA detection device with sensitivity in the range 1 fM-10 μM by utilizing a mixture of UV illuminated γ-APTES and silica NPs. Further, Oh et al. 13 used silicon nanowires and improved the pH sensitivity from 54.9 mV/pH to 60.2 mV/pH. Xue et al.14 fabricated a Si/SiO 2 thin-film based ion-se...

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confidence: 99%

Sensitivity Enhancement Mechanisms in Textured Dielectric based Electrolyte-Insulator-Semiconductor (EIS) Sensors

Kumar

Panda

2015

ECS J. Solid State Sci. Technol.

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“…The linearity and long term stability of the PSW sensor for glucose detection has been reported in our previous work (Hsu et al 2009) (Wu et al 2011). In order to confirm the applicability of the PSW sensor for measuring the change in the extracellular microenvironment around a single cell, we again conducted the pH response test for the PBS solution with different pH values.…”

Section: Psw Sensor Performancementioning

confidence: 81%

“…The advantage of using PSW rather than SiNW is that PSW is much less-expensive and is readily fabricated by conventional semiconductor fabrication methods without losing much sensitivity (Mishra et al 2008) (Hsiao et al 2009) (Hsu et al 2009) (Wu et al 2010) (Wu et al 2011). It is known that the extracellular metabolic microenvironment is highly related to cell properties such as cell migration and invasion (Gillies et al 1994) (McCoy et al 1995) (Raghunand et al 1999) (Gatenby and Gillies 2004) (Cardone et al 2005).…”

Section: Introductionmentioning

confidence: 99%

“…It has been proven that, compared to normal tissue, tumors require a high level of glucose so as to consistently acidify their environment in order to support the metabolism, resulting in a lower extracellular pH value. Since a PSW sensor has been proven to be able to detect the H + ion density (pH value) of the medium coated on the PSW surface (Hsu et al 2009) (Wu et al 2011) and different cells produce different extracellular acidification and hence different H + ion densities (Baumann et al 1999) (Schäfer et al 2009) (Sommerhage et al 2010), it is therefore expected that any change in the extracellular microenvironment of the single cell confined in the isolation window residing on the PSW will alter the surface-charge state of the PSW and can therefore be detected by the change in the current flowing through the PSW channel. In this paper, we report for the first time the differences in extracellular cell property between normal cells and cancer cells by using a PSW in combination with an isolation window.…”

Section: Introductionmentioning

confidence: 99%

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Electrical characterization of single cells using polysilicon wire ion sensor in an isolation window

Hsu

et al. 2011

Biomed Microdevices

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A polysilicon wire (PSW) sensor can detect the H(+) ion density (pH value) of the medium coated on its surface, and different cells produce different extracellular acidification and hence different H(+) ion densities. Based on this, we used a PSW sensor in combination with a mold-cast polydimethylsiloxane (PDMS) isolation window to detect the adhesion, apoptosis and extracellular acidification of single normal cells and single cancer cells. Single living human normal cells WI38, MRC5, and BEAS-2B as well as non-small-cell lung cancer (NSCLC) cells A549, H1299, and CH27 were cultivated separately inside the isolation window. The current flowing through the PSW channel was measured. From the PSW channel current change as a function of time, we determined the cell adhesion time by observing the time required for the current change to saturate, since a stable extracellular ion density was established after the cells were completely adhered to the PSW surface. The apoptosis of cells can also be determined when the channel current change drops to zero. We found that all the NSCLC cells had a higher channel current change and hence a lower pH value than the normal cells anytime after they were seeded. The corresponding average pH values were 5.86 for A549, 6.00 for H1299, 6.20 for CH27, 6.90 for BEAS-2B, 6.96for MRC5, and 7.02 for WI38, respectively, after the cells were completely adhered to the PSW surface. Our results show that NSCLC cells have a stronger cell-substrate adhesion and a higher extracellular acidification rate than normal cells.

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“…PSW is not only easily-fabricated on Si wafer using conventional semiconductor processing technology, but is also less expensive and entails only a small loss of sensitivity [13][14][15][16][17]. In our previous reports, we showed that a PSW coated with a ␥-APTES layer can be used for DNA base detection, including single-and multiple-base changes [15], but the lowest detection limit achievable was 30 nM for strains 20 bases long.…”

Section: Introductionmentioning

confidence: 99%

Highly sensitive polysilicon wire sensor for DNA detection using silica nanoparticles/γ-APTES nanocomposite for surface modification

Lin

Hsu

et al. 2011

Sensors and Actuators B: Chemical

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Ultra-sensitive polysilicon wire glucose sensor using a 3-aminopropyltriethoxysilane and polydimethylsiloxane-treated hydrophobic fumed silica nanoparticle mixture as the sensing membrane

Cited by 27 publications

References 28 publications

Sensitivity Enhancement Mechanisms in Textured Dielectric based Electrolyte-Insulator-Semiconductor (EIS) Sensors

Sensitivity Enhancement Mechanisms in Textured Dielectric based Electrolyte-Insulator-Semiconductor (EIS) Sensors

Electrical characterization of single cells using polysilicon wire ion sensor in an isolation window

Highly sensitive polysilicon wire sensor for DNA detection using silica nanoparticles/γ-APTES nanocomposite for surface modification

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